SEMICONDUCTOR sens TECHNICAL DATA 2N4405. t PNP Silicon Small-Signal Transistor -designed for general-purpose switching and amplifier applications. CRYSTALONCS 2805 Veterans Highwa' Suite 14 Ghway Ronkonkoma, NY. 14772 MAXIMUM RATINGS Rating Symbol Value unit 7 Collector-Emitter Voltage VcEO 80 Vde Collector-Base Voltage VoBO 80 Vde Emitter-Base Voltage VEBO .0 Vde Collector Current Continuous Io 05 Ade Device Dissipation Pr @ Ta @25'C 10 Watts Derate above 25C se mec @ Tc @ 25C Pala oe Derate above 25C ee F CASE 79-04, STYLE 1 Storage Temperalure Range ie eee TO-205AD (TO-30) ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteriatic Symbot Min = [una OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage! |) ViBRICEO 80 _ Vdc (Ic = 10 MAde, I = 0) Collector-Base Breakdown Voltage ViBR)ICBO 80 a Vde (Ig = 10 yAde. ig = 0) Emutter-Base Breakdown Voltage ViBRIEBO 5.0 a Vde (le = 10 pAdc) Collector Cutoff Current ICBO (VoBg = 60 Vae, IE = 0} _- 26 nAdc (Veg = 60 Vde. Ie = 0, Ta = 150C} _ 25 wAdc Emitter-Cutoff Current IEBO _ 25 nAdc (Vge = 3.0 Vde. Ic = 0) '* Pulsed Pulse Wiath 250 tc 35C us Duly Cycle 10 to 20% lcontieued:2N4405JAN SEIRES ELECTRICAL CHARACTERISTICS continued (7a = 25'C uniess otherwise noted.) Characteristic Symbol Min Max Unit ON CHARACTERISTICS | DC Current Gain't) NEE _ {Ig = 0.1 made. Vice = 5.0 Vac) 75 = tig = 10 madc. VE = 5.0 Vde} 100 = (ig = 150 mAdc, Vee = 50 Vde) 100 300 {ig = 800 mAde. VCE = 5.0 Vde) 50 _ (Ig = 150 mAde. Voce = 8.0 Vie. Ta = 65 43C) 40 _ Collector-Emitter Saturation Voltage! 1) VcE{sat) Vde {Ig = 10 mAde, Ig = 1.0 mAdc) - 0.15 {ig = 180 made, tg = 15 mAdc) ; 0.2 (Ig = 500 mAdc, Ip = 50 mAdc) a 0.5 Base-Emitter Saturation Voltage!) VCE (sat) Vde (ic = 10 mAdc. Ip = 1.0 mAdc) _ 0.8 {ic = 500 mAdc. IB = 50 mAdc) 0.85 1.2 Base-Emitter On-Voltage VBE - 69 Vde rand (ic = 150 mAdc. VCE = 5.0 Vde} 3 SMALL-SIGNAL CHARACTERISTICS ee Collector-Base Capacitance Cabo _ 10 pF (Vop = 10 Vdc. Ie = 0,1 = 0.1 10 10 MHz) oe eee Smaill-Signal! Current Transter Ratio, Magnitude intel 20 6.0 - (ic = 50 mAdc. VCE = 20 Vdc. f = 100 MHz) | Noise Figure NF - 356 a8 ig = 1.0 mAdc, Voce = 10 Vde. t= 1.0 kHz, Rg = 100 ofrms) SWITCHING CHARACTERISTICS (See Figure 33) (Ig = 500 mAdc, VBE(ott) = 0.8 VdC- ig = 50 Adc) Delay Time i) os 15 ns Rise Time ty _ 25 ns Storage Time ts a 175 ns Fati Time tt $0 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 =3C, Vcg = 40 Vde Py = 1.0W Characteristics Tested Collector Cutoff Current (Veep = 60 Vdel DC Current Gain) lig = 10 mAde. Vg = 5.0 Vde) 9, af Initial Value Dalta Collector Cutoft Current nAdc Delta DC Current Gain!" Vy Pused Puse Warn 2H IC 8C 3 Cuty Cycle 1 ca