TO-220 Plastic-Encapsulated Transistors
2SD880 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1.5 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150℃
ELE CTRICAL CHARACTERISTICS (Tamb=2 5℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown voltage V(BR)CBO Ic=100µA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=50mA, IB=0 60 V
E mitter-base breakdow n vol tage V(BR)EBO I
E= 100µA, IC=0 7 V
Collector cut-off current ICBO V
CB=60V, IE=0 100 µA
Emitte r c u t -o ff cu rrent IEBO V
EB=7V, IC=0 100 µA
DC current gain hFE V
CE=5V, IC=500mA 60 300
Collector-emitter saturati on voltage VCE (sa t) I C=3A, IB=300mA 1 V
Base-emitter satu ration voltage VBE I
C=0.5A, VCE= 5V 1 V
Trans ition Frequency f T V
CE=5 V, IC=500mA 3 MHz
Collector output capacitance Cob VCE=10V, IE=0, f=1MHz 70 pF
Turn on time ton 0.8 µs
Storage time t s 1.5 µs
Fall time t f
IB1=-IB2=0.2A, IC=2A
VCC=30V, PW=20µs
0.8 µs
CLASSIFICATION OF hFE
Rank O Y GR
Range 60-120 100-200 150-300
1 2 3
TO—220
1. BASE
2. COLLECTOR
3. EMITTER
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