DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAS70-07V Schottky barrier double diode Product specification 2002 Jan 17 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V FEATURES PINNING * Low forward voltage PIN * High reverse voltage 1 anode 1 * Low capacitance 2 not connected * Ultra small plastic SMD package 3 cathode 2 * Flat leads: excellent coplanarity and improved thermal behaviour. 4 anode 2 5 not connected 6 cathode 1 DESCRIPTION APPLICATIONS * Ultra high-speed switching handbook, halfpage * Voltage clamping 6 5 4 * Line termination 6 4 1 3 * Inverse-polarity protection * RF applications (e.g. mixing and demodulation). 1 DESCRIPTION 2 3 Top view Planar Schottky barrier double diode with an integrated guard ring for stress protection. MAM461 Marking code: 77. Two separate dies encapsulated in a SOT666 ultra small SMD plastic package. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage - 70 V IF continuous forward current - 70 mA IFRM repetitive peak forward current tp 1 s; 0.5 - 70 mA tp < 10 ms IFSM non-repetitive peak forward current - 100 mA Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C 2002 Jan 17 2 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF IR Cd PARAMETER CONDITIONS forward voltage MAX. UNIT see Fig.2 reverse current diode capacitance IF = 1 mA 410 mV IF = 10 mA 750 mV IF = 15 mA 1 V VR = 50 V; note 1; see Fig.3 100 nA VR = 70 V; note 1; see Fig.3 10 A VR = 0; f = 1 MHz; see Fig.5 2 pF Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOT666 standard mounting conditions. Soldering The only recommended soldering is reflow soldering. 2002 Jan 17 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V GRAPHICAL DATA MRA803 10 2 MRA805 10 2 IR (A) IF (mA) (1) 10 10 (2) 1 1 10 1 (3) 10 1 10 2 (1) 10 2 (2) (3) (4) 10 3 0 0.2 0.4 0.6 0.8 1 0 20 40 60 (1) Tamb = 125 C. (2) Tamb = 85 C. Fig.2 (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (3) Tamb = 25 C. (4) Tamb = -40 C. Forward current as a function of forward voltage; typical values. Fig.3 MRA802 103 80 VR (V) VF (V) Reverse current as a function of reverse voltage; typical values. MRA804 2 Cd (pF) rdiff 1.5 102 1 10 0.5 1 10-1 0 1 10 IF (mA) 102 0 40 60 80 VR (V) f = 10 kHz. f = 1 MHz. Fig.4 Fig.5 Differential forward resistance as a function of forward current; typical values. 2002 Jan 17 20 4 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2002 Jan 17 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jan 17 6 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V NOTES 2002 Jan 17 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA74 (c) Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jan 17 Document order number: 9397 750 08971