DATA SH EET
Product specification 2002 Jan 17
DISCRETE SEMICONDUCTORS
BAS70-07V
Schottky barrier double diode
M3D744
2002 Jan 17 2
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
FEATURES
•Low forward voltage
•High reverse voltage
•Low capacitance
•Ultra small plastic SMD package
•Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Line termination
•Inverse-polarity protection
•RF applications (e.g. mixing and demodulation).
DESCRIPTION
Planar Schottky barrier double diode with an integrated
guard ring for stress protection.
Two separate dies encapsulated in a SOT666 ultra small
SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode 1
2 not connected
3 cathode 2
4 anode 2
5 not connected
6 cathode 1
handbook, halfpage
123
465
Top view
MAM461
64
3
1
Fig.1 Simplified outline (SOT666) and symbol.
Marking code: 77.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage −70 V
IFcontinuous forward current −70 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −70 mA
IFSM non-repetitive peak forward current tp<10ms −100 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2002 Jan 17 3
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT666 standard mounting conditions.
Soldering
The only recommended soldering is reflow soldering.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.2
IF= 1 mA 410 mV
IF= 10 mA 750 mV
IF=15mA 1 V
I
Rreverse current VR= 50 V; note 1; see Fig.3 100 nA
VR= 70 V; note 1; see Fig.3 10 µA
Cddiode capacitance VR= 0; f = 1 MHz; see Fig.5 2 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
2002 Jan 17 4
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
GRAPHICAL DATA
10
0 0.2 0.4 0.6 0.8 1
1
IF
(mA)
V (V)
F
MRA803
(1) (4)(2) (3)
102
10 1
10 2
Fig.2 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb =85°C. (3) Tamb =25°C.
(4) Tamb =−40 °C.
MRA805
1
10
10
020406080
V (V)
R
IR
(µA) (1)
(3)
(2)
2
10 1
10 2
10 3
Fig.3 Reverse current as a function of reverse
voltage; typical values.
(1) Tamb = 150 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
10
1110
r
diff
IF (mA)
MRA802
10−1102
102
103
Fig.4 Differential forward resistance as a function
of forward current; typical values.
f = 10 kHz.
0
0.5
1
1.5
2
0 20406080
MRA804
Cd
(pF)
V (V)
R
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
2002 Jan 17 5
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
PACKAGE OUTLINE
UNIT bpcDE e1HELpw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
01-01-04
01-08-27
IEC JEDEC EIAJ
mm 0.27
0.17 0.18
0.08 1.7
1.5 1.3
1.1 0.5
e
1.0 1.7
1.5 0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0 1 2 mm
scale
A
0.6
0.5
c
X
123
456
Plastic surface mounted package; 6 leads SOT666
YS
wMA
2002 Jan 17 6
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysno licence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Jan 17 7
Philips Semiconductors Product specification
Schottky barrier double diode BAS70-07V
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Jan 17 Document order number: 9397 750 08971
