PRELIMINARY DATA SHEET SILICON TRANSISTOR PA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES PACKAGE DRAWINGS * Low Noise, High Gain (Unit: mm) * Operable at Low Voltage 2.10.1 * Small Feed-back Capacitance 1.250.1 Cre = 0.4 pF TYP. Loose products (50 PCS) Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. PA806T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC 0.2 -0 6 4 5 1 2 +0.1 PA806T 0.15 -0 PACKING STYLE 0~0.1 QUANTITY 0.7 PART NUMBER 0.90.1 3 1.3 0.65 0.65 ORDERING INFORMATION X Y 2.00.2 +0.1 * Built-in 2 Transistors (2 x 2SC4959) PIN CONFIGURATION (Top View) Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER 6 Q1 SYMBOL RATING UNIT Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 150 in 1 element 200 in 2 elements Note mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 5 4 Q2 1 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3640 (O.D. No. ID-9147) Date Published April 1995 P Printed in Japan (c) 1995 PA806T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER SYMBOL CONDITION Collector Cutoff Current ICBO VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 DC Current Gain hFE Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain mANote 1 TYP. VCE = 3 V, IC = 10 mA, f = 2 GHz 12 Cre MHzNote 2 0.4 VCE = 3 V, IC = 10 mA, f = 2 GHz NF VCE = 3 V, IC = 3 mA, f = 2 GHz hFE1/hFE2 UNIT 0.1 A 0.1 A 150 fT VCB = 3 V, IE = 0, f = 1 MAX. 75 |S21|2 Noise Figure hFE Ratio VCE = 3 V, IC = 10 MIN. 7 0.7 pF 8.5 1.5 VCE = 3 V, IC = 10 mA A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2 GHz dB 2.5 dB 0.85 Notes 1. Pulse Measurement: Pw 350 s, Duty cycle 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking T83 hFE Value 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 2 Collector Current IC (mA) Total Power Dissipation PT (mW) 50 El em en ts Pe rE in lem t 50 To ta en 100 0 l 100 Ambient Temperature TA (C) 2 VCE = 3 V Free Air 150 40 30 20 10 0 0.5 Base to Emitter Voltage VBE (V) 1.0 PA806T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 200 60 50 400 A 40 300 A 30 200 A 20 IB = 100 A DC Current Gain hFE Collector Current IC (mA) 500 A 5V VCE = 3 V 100 10 0 0.1 0.2 0 0.5 Collector to Emitter Voltage VCE (V) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 5V 3V 10 8 VCE = 1 V 6 4 50 100 5V 8 3V VCE = 1 V 6 4 2 1 2 5 10 20 50 1 2 5 10 20 50 Collector Current IC (mA) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE NOISE FIGURE vs. COLLECTOR CURRENT 0.6 4 Feed-back Capacitance Cre (pF) f = 2 GHz VCE = 3 V Noise Figure NF (dB) 10 20 f = 2 GHz Collector Current IC (mA) 3 2 1 0 0.5 5 10 f = 2 GHz 12 2 0.5 2 INSERTION GAIN vs. COLLECTOR CURRENT Insertion Power Gain l S21e l 2 (dB) Gain Bandwidth Product fT (GHz) 14 1 Collector Current IC (mA) 1 2 5 10 Collector Current IC (mA) 20 50 f = 1 MHz 0.5 0.4 0.3 0.2 0.5 1 2 5 10 20 Collector to Base Voltage VCB (V) 3 PA806T S-PARAMETERS V CE = 3 V, I C = 1 mA, Z O = 50 f S11 GHz MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.9340 0.9040 0.8150 0.7530 0.6540 0.5900 0.5160 0.4590 0.4230 0.3670 0.3370 0.3150 0.3080 0.2930 0.2950 S21 ANG -15.7 -29.4 -43.4 -56.6 -68.9 -79.8 -90.1 -101.5 -110.8 -123.9 -136.7 -145.5 -159.1 -164.8 -179.6 S12 S22 MAG ANG MAG ANG MAG ANG 3.5100 3.3520 3.1060 2.8840 2.6050 2.4490 2.2610 2.0780 1.9250 1.8700 1.7790 1.6600 1.5690 1.5190 1.4610 164.8 150.7 138.0 126.3 115.1 105.4 96.8 89.4 83.7 76.3 69.9 64.1 59.4 55.3 50.7 0.0450 0.0780 0.1140 0.1370 0.1490 0.1660 0.1770 0.1780 0.1880 0.1900 0.2110 0.2140 0.2070 0.2140 0.2260 82.6 68.0 62.8 58.0 55.2 45.4 44.8 45.1 42.5 41.9 43.9 41.9 42.8 45.8 45.4 0.9850 0.9410 0.8960 0.8260 0.7830 0.7220 0.6790 0.6430 0.6290 0.5880 0.5630 0.5520 0.5450 0.5220 0.4960 -8.7 -17.1 -23.6 -29.9 -34.7 -38.0 -42.0 -45.2 -46.8 -51.4 -54.3 -57.0 -59.2 -64.5 -61.3 MAG ANG MAG ANG MAG ANG 8.8990 7.4880 6.1260 5.1230 4.3050 3.7880 3.3560 3.0100 2.6960 2.5340 2.3820 2.1870 2.0530 1.9660 1.8710 154.2 134.4 119.6 108.1 99.1 91.3 84.8 79.1 74.4 69.4 64.0 60.0 55.8 53.0 49.6 0.0370 0.0760 0.0860 0.1050 0.1210 0.1330 0.1440 0.1570 0.1760 0.1940 0.2150 0.2130 0.2410 0.2490 0.2750 67.2 65.6 60.9 58.4 55.9 61.2 55.4 56.2 58.0 56.1 56.3 57.8 57.6 55.2 56.6 0.9420 0.8040 0.7060 0.6250 0.5660 0.5190 0.4950 0.4660 0.4560 0.4310 0.4050 0.3990 0.3950 0.3750 0.3740 -15.7 -26.6 -33.2 -36.6 -38.3 -41.4 -43.9 -44.5 -44.5 -48.8 -51.9 -52.8 -52.9 -59.2 -60.8 V CE = 3 V, I C = 3 mA, Z O = 50 f 4 S11 GHz MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.8020 0.6780 0.5440 0.4430 0.3540 0.2930 0.2360 0.2000 0.1820 0.1480 0.1370 0.1340 0.1640 0.1500 0.1780 S21 ANG -25.9 -45.8 -62.8 -75.7 -87.3 -99.7 -108.4 -121.0 -129.5 -151.7 -166.1 175.2 169.7 170.9 147.7 S12 S22 PA806T S-PARAMETERS V CE = 3 V, I C = 5 mA, Z O = 50 f S11 GHz MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.6900 0.5360 0.4010 0.3150 0.2360 0.1850 0.1440 0.1230 0.1040 0.1000 0.1110 0.1040 0.1180 0.1190 0.1490 S21 ANG -33.3 -54.7 -70.0 -82.4 -93.8 -105.4 -115.8 -134.4 -144.6 -170.6 167.4 158.2 156.3 150.0 142.4 MAG 12.2960 9.4300 7.2390 5.8220 4.7830 4.1700 3.6410 3.2380 2.8910 2.7040 2.5330 2.3270 2.1850 2.0910 1.9760 S12 S22 ANG MAG ANG MAG ANG 147.1 125.5 111.3 101.1 93.4 86.4 80.7 76.1 71.4 67.3 62.6 58.7 54.9 52.6 49.0 0.0320 0.0610 0.0700 0.0950 0.1090 0.1260 0.1350 0.1560 0.1770 0.1930 0.2080 0.2260 0.2560 0.2560 0.2860 74.8 66.3 59.6 63.8 62.3 61.9 65.9 61.2 62.4 60.7 60.6 61.6 58.2 56.8 56.6 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 -19.7 -30.3 -34.5 -36.7 -38.0 -38.8 -40.4 -42.6 -43.9 -45.8 -50.3 -50.2 -51.2 -58.1 -56.9 ANG MAG ANG MAG ANG 135.9 114.2 102.0 93.8 87.2 81.6 76.9 72.4 68.8 65.0 60.5 57.0 53.5 50.9 47.9 0.0330 0.0520 0.0690 0.0880 0.1060 0.1260 0.1450 0.1590 0.1790 0.2060 0.2220 0.2420 0.2660 0.2770 0.2860 63.8 68.5 69.0 71.6 69.3 70.1 70.5 65.5 65.0 63.9 62.8 60.9 59.9 59.6 58.3 0.7930 0.5910 0.5130 0.4480 0.4180 0.4030 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 -26.2 -32.9 -32.9 -32.8 -35.9 -33.3 -36.5 -36.2 -39.5 -42.3 -46.6 -48.8 -47.2 -55.1 -51.2 V CE = 3 V, I C = 10 mA, Z O = 50 f S11 GHz MAG 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 0.5080 0.3410 0.2320 0.1770 0.1220 0.1010 0.0670 0.0620 0.0660 0.0770 0.0990 0.1140 0.1260 0.1020 0.1370 S21 ANG -43.6 -65.3 -80.7 -90.8 -108.2 -121.8 -138.2 -167.6 -171.3 146.7 146.5 128.1 136.8 129.6 123.5 MAG 17.0900 11.3980 8.2250 6.3950 5.1870 4.4390 3.8770 3.4350 3.0650 2.8540 2.6590 2.4400 2.2790 2.1950 2.0800 S12 S22 5 PA806T [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6