Power In te gr ations
5245 Hellyer Avenue, San Jose, CA 95138 USA.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Title
Reference Design Report for a 10 W CV/CC
USB Charger using InnoSwitchTM -CH
INN2023K
Specification
85 VAC – 264 VAC Input;
5 V, 2 A Output (end of USB Cable)
Application Cell Pho ne / USB Charger
Author Applicat io ns E ng ineering Dep ar tment
Document
Number RDR-420
Date April 20, 2015
Revision 1.1
Summary and Features
• InnoSwitch-CH - Industry first AC /DC ICs with isolated , safety rated integr ated
feedback
• All the benefits o f secondary side control with the simp l icity of prim ary side regulation
• ±3% CV, ±5% CC regula tion
• Insensitive t o transformer var iation
• Transient r esponse independent of load timing
• Smaller, lower cost output capacitors
• <10 mW no-load input power
• Cable voltage drop compensation
• Built in synchronous rectific ation for high effici ency
PATENT INFORMATION
The products and applications illustrated h erein ( including transformer con struction and circuits external to the products) may
be covered by one or more U.S. and foreign patents, o r potentiall y by pen ding U.S. and foreign pate n t appl ications assigned
to Power Integrations. A complete li st of Power Integrations' patents ma y be found at www.powerint.com. Power I ntegrations
grants its customers a license unde r certain patent rights as set forth at <ht tp://www.powerint.com/ip.htm>.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 2 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Table of Contents
Introduction ......................................................................................................... 4 1
Power Supp l y Specification ................................................................................... 5 2
Schematic ............................................................................................................ 6 3
Circuit Description ................................................................................................ 7 4
Input EMI Filtering ......................................................................................... 7 4.1
InnoSwitch-CH IC Primary .............................................................................. 7 4.1
InnoSwitch-CH IC Secondary .......................................................................... 8 4.2
PCB Layout .......................................................................................................... 9 5
Bill of Ma terials .................................................................................................. 11 6
Transform er Specification ................................................................................... 12 7
Electrical Diagram ........................................................................................ 12 7.1
Electrical Specificat i ons ................................................................................ 12 7.2
Materials ..................................................................................................... 12 7.3
Transform er Bui ld Diagram .......................................................................... 13 7.4
Transform er Instructions .............................................................................. 13 7.5
Transform er Illustrations .............................................................................. 14 7.6
Tra n sf ormer Design Sprea dsheet ........................................................................ 18 8
Performance Data .............................................................................................. 21 9
Active Mode Efficiency (at USB Socket) vs. Line ............................................. 21 9.1
Active Mode Efficiency (at USB Socket) vs. Load ............................................ 22 9.2
Efficiency wit hout Schottky Diode in Parall el with Q1, SR FET .................. 22 9.2.1
Efficiency wit h a Schottky Diod e, SS16, in Parall el with Q1, SR FET .......... 24 9.2.2
No-Load Input Power ................................................................................... 25 9.3
Average Effici ency (at USB Socket) ............................................................... 26 9.4
Efficiency Requirements ........................................................................ 26 9.4.1
Average Effici ency at 115 VAC Input ...................................................... 26 9.4.2
Average Efficiency at 230 VAC Input ...................................................... 27 9.4.3
CV/CC Regulation Measured a t the End of Cable ............................................ 28 9.5
Open Case Thermal Performance ..................................................................... 29 10
Waveforms ..................................................................................................... 31 11
Load Transient Response (end of cable) ........................................................ 31 11.1
Load Transient Respon se (at USB Socket) ..................................................... 32 11.2
Switching Waveforms ................................................................................... 33 11.3
InnoSwitch-CH Waveforms .................................................................... 33 11.3.1
SR FET Waveforms ............................................................................... 33 11.3.2
Output R ipple Measurements ........................................................................ 34 11.4
Ripple Mea surement Technique ............................................................. 34 11.4.1
Measurement Results ............................................................................ 35 11.4.2
Conduct i ve E M I ............................................................................................... 36 12
2 A Resistive Load, Floating Output (PK / AV) ................................................ 36 12.1
2 A Resistive Load, Artificial Ha nd Ground (PK / AV) ...................................... 38 12.2
Smartp hone with Monitor Set -up (HDMI) (QP / AV) ....................................... 40 12.3
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 3 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Radiative E MI ................................................................................................. 42 13
Audible Noise .................................................................................................. 44 14
Lighting Surge & ESD Test ............................................................................... 49 15
Differential Mode Test .................................................................................. 49 15.1
Common Mode Test ..................................................................................... 49 15.2
ESD Test ..................................................................................................... 49 15.3
Revision History .............................................................................................. 50 16
Important Note:
Although this board is designed to satisfy safety isolation requirements, the engineering
prototype has not been agency approved. Therefore, all testing should be performed
using an isolation transformer to provide the AC input to the prototype board.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 4 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Introduction 1
This document is an engineering report describing a 2 A, 5.0 V USB charger utilizing a
device from the InnoSwitch-CH family of ICs. This design is intended to show the high
power den sity and efficiency that is possible due to the high level of integration while still
providing exceptional perfor m ance.
This document contains the power supply specification, schematic, bill of materials,
transform er documentation, printed circuit layout, and performance data.
Figure 1 – Populated Circuit Board Photograph, Top.
Figure 2 – Populated Circuit Board Photograph, Bottom.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 5 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Power Supply Specification 2
The table below represents the minimum acceptable performanc e of the design. Actual
performa nc e is li sted in the results sectio n.
Description Symbol Min Typ Max Units
Comment
Input
Voltage
85
265
VAC
2 Wire – no P.E.
Frequency
50
50/60
64
Hz
No-load Input Power
10
mW
230 VAC
Output
Output Voltage
4.75
5.0
5.25
V
0.35 V cable resistance drop
Transient Output Voltage VOUT(T) 4.2 5.5 V
0 A - 2 A - 0 A load ste p end of cable
At the end of the output cab le
Output Ripple Voltage
150
mV
At the end of the output cable
Output Cable Compensation
250
300
350
mV
At 2 A output current
Output Current CC point
2
2.5
A
Auto-Restart Voltage V
2 3.5 V At end of cable
Turn on Rise Time t
20 ms
Rated Output Power
10
W
Efficiency
Average
25%, 50%, 75%, and 100%
ηAVE[BRD] 84 % Measured at USB socket
ηAVE[CBL] 80 % With 0.38 V cable resistance drop
10% η10% 79 %
Environmental
Output Cable Impedance RCBL 190 mΩ
Conducted EMI CISPR22B / EN55022B
Load floating or grounded
via artificial ha nd Resistive loa d, 6 dB Margin
Connected to mobile phone and TV
(MHL connection enabled) 6 dB Margin
Safety IEC950 / UL195 0 Cla ss II Designed to meet
Audible noise 25 dB Measured at 3 cm
Line Surge
Common mode (L1/L2-PE)
6
kV
Ring Wave, Common Mode: 12 Ω
ESD ±16.5
±8 kV
kV
Contact
Air discharge
No degradation in performance
Ambient Temperature TAMB 0 40 oC
Free convection, sea level in sealed
enclosure
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 6 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Schematic 3
Figure 3 – Schematic.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 7 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Circui t Des cri pti o n 4
Input EMI Filtering
4.1
Fuse F1 provides protection against catastrophic failure of components on the primary
side.
An inrush limiting thermistor (RT1) was necessary due to the low surge current rating of
the rectifier diodes (D1-D4) and the relatively high value and therefore low impedance of
the bulk sto r age capacitors C2 and C4.
Physically small diodes were selected for D1-D4 due to the limited space, specifically
height from P CB to case.
Capacitor C2 and C4 provide filtering of the rectified AC input and together with L1 and
L2 form a π (pi) filter to attenuate differential mode EMI. A low value Y capacitor (C8)
reduces common mode EMI.
InnoSwitch-CH IC Primary
4.1
One side of the transformer primary is connected to the rectified DC bus, the other is
connected to the integrated 650 V power MOSFET inside the InnoSwit ch-CH IC (U1).
A low cost RCD clamp formed by D1, R1, R14 and C1 limits the peak drain voltage due to
the effects of transfo r m er and output trace inductance.
The IC is self-starting, using an internal high voltage current source to charge the BPP
pin capacitor (C6) when AC is first applied. During normal operation the primary side
block is powered from an auxiliary winding on the transformer. The output of this is
configured as a flyback winding, rectified and filtered (D2 and C5) and fed in the BPP pin
via a cur r ent limiting resistor R4.
Output regulation is achieved using On/Off control, the number of enabled switching
cycles are adjusted based on the output load. At high load most switching cycles are
enable d, and at light l oad or no -load mos t cycl ed are di sable d or skippe d. Once a cycle is
enabled, the power MOSFET remain on until the primary current ramps to the device
current limit for the specific operating state. There are four operating states (current
limits) arrange such that the frequency content of the primary current switching pattern
remains out of the audible range until at light load where the transformer flux density
and therefo r e audible noise generation is at a very low level.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 8 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
InnoSwitch-CH IC Secondary
4.2
The secondary side of the InnoSwitch-CH provides output voltage, output current
sensing and drive to a MOSFET providing synchr onous rectification.
The secondary of the transformer is rectified by Q1 and filtered by C10. High frequency
ringing during switching transients that would otherwise create high voltage across Q1
and radiated EMI is reduced via snubber c omp onents R7 and C9.
To reduce dissipation synchronous rectification (SR) is provided by Q1. The gate of Q1 is
turned on based on the winding voltage sensed via R5 and the FWD pin of the IC. In
continuous conduction mode operation the power MOSFET is turned off just prior to the
secondary side commanding a new switching cycle from the primary. In discontinuous
mode the MOSFET is turned off when the voltage drop across the MOSFET falls below a
threshold. Secondary side control of the primary side MOSFET ensure that it is never on
simultaneously with the synchronous rectification MOSFET. The MOSFET drive signal is
output on the SR/P pin.
The secondary side of the IC is self-powered from either the secondary winding forward
voltage or the ou tput voltage . Du ri ng CV o pe rati on th e outpu t voltage powe rs the de v ice ,
fed into the VO pin.
During CC operation, when the output voltage falls the device will power itself from the
secondary winding directly. During the on-time of the primary side MOSFET the forward
voltage that appears across the secondary winding is used to charge the decoupling
capacitor C7 via R5 and an internal regulator. The unit enters auto-restart when the
sensed output voltage is lower than 3 V.
Output current is sensed internally between the IS and GND pins with a threshold of 35
mV to minimize losses. Once the internal current sense threshold is exceeded, the device
adjusts the number of enabled switching cycles to maintain a fi xed out put current.
Below the CC threshold the device operates in constant voltage mode. The output
voltage is sensed via resistor divider R8 and R9 operation with a reference voltage of
1.265 V on t he F B pin when at the regulation output voltage.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 9 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
PCB Layout 5
PCB copper thi ckness is 2 oz (2. 8 mils / 70 µm) u n l ess otherwise stated
Figure 4 – Printed Circuit Layout, Top.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 10 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Figure 5 – Printed Circuit Layout, Bottom.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 11 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Bill of Materials 6
Item
Qty
Ref Des
Description
Mfg Part Number
Mfg
1
1
C1
1 nF, 250 V, Ceramic, X7R, 0805
GRM21AR72E102KW01D
Murata
2 2 C2 C4
8.2 µF, 400 V, Electrolytic, (8 x 14)
8.2 µF, 400 V, Electrolytic, (8 x 14), Alternate part
400AX8.2M8X16
Capxon
Rubycon
3
1
C5
22 µF, 16 V, Ceramic, X5R, 0805
C2012X5R1C226K
TDK
4
1
C6
1 µF, 25 V, Ceramic, X5R, 0805
C2012X5R1E105K
TDK
5
1
C7
2.2 µF, 25 V, Ceramic, X7R, 0805
C2012X7R1E225M
TDK
6
1
C8
100 pF, Ceramic, Y1
440LT10-R
Vishay
7
1
C9
1.5 nF, 200 V, 10%, Ceramic, X7R, 0805
08052C152KAT2A
AVX
8
1
C10
560 µF, 6.3 V, Al Orga nic Polymer, Gen. Purpose, 20%
RS80J561MDN1JT
Nichicon
9
1
C15
100 pF 100 V 10 % X7R 0805
08051C101JAT2A
AVX
10
1
C16
1 µF, 50 V, Ceramic, X5R, 0805
08055D105KAT2A
AVX
11
1
D1
600 V, 1 A, Rectifier, Glass Passivated, POWERDI123
DFLR1600-7
Diodes, Inc.
12
1
D2
200 V, 1 A, Rectifier, Glass Passivated, POWERDI123
DFLR1200-7
Diodes, Inc.
13 4
D3 D4
D5 D6
800 V, 1.5 A, Gen Purpose, SMA
800 V, 1.5 A, Gen Purpose, SMA, Alternat e part
S2KA-13-F
RS2MA-13-F
Diodes, Inc. Diodes,
Inc.
14
1
F1
3.15 A, 250 V, Slow, RST
507-1181
Belfuse
15
1
J1
Test Point, BLK, Miniature THRU-HOLE MOUNT
5001K-ND
Keystone
16
1
J2
Test Point, WHT, Miniature THRU-HOLE MOUNT
5002K-ND
Keystone
17
1
J3
Connector USB Female Type A
USB-AF-DIP-094-H
GOLDCONN
18
1
L1
100 µH, 0.490 A, 20%
RL-5480-2-100
Renco
19
1
L2
4.7 µH, 600 mA SMD INDUCTOR, MULTILAYER
MLZ2012N4R7LT000
TDK
20
1
Q1
60 V, 15 A, N-Channel, PowerPAK SO-8
SI7478DP-T1-E3
Vishay
21
1
R1
200 kΩ, 5%, 1/8 W, Thick Film, 0805
ERJ-6GEYJ204V
Panasonic
22
1
R4
3 kΩ, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ302V
Panasonic
23
1
R5
47 Ω, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ470V
Panasonic
24
1
R7
20 Ω, 5%, 1/8 W, Thick Film, 0805
ERJ-6GEYJ200V
Panasonic
25
1
R8
100 kΩ, 1%, 1/16 W, Thick Film, 0603
ERJ-3EKF1003V
Panasonic
26
1
R9
34 kΩ, 1%, 1/16 W, Thick Film, 0603
ERJ-3EKF3402V
Panasonic
27
1
R10
330 k
Ω
, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ334V
Panasonic
28
1
R11
100 kΩ, 5%, 1/10 W, Thick Film, 0603
ERJ-3GEYJ104V
Panasonic
29
1
R14
30 Ω, 5%, 1/4 W, Thick Film, 1206
ERJ-8GEYJ300V
Panasonic
30
1
RT1
NTC Thermistor, 10 Ohms, 0.7 A
MF72-010D5
Cantherm
31 1 T1 Custom (see transformer section for material set)
SNX-R1776
TSD-3517
Santronics
Premier Magnetics
32
1
U1
InnoSwitch-CH IC eSOP-R16B
INN2023K
Power Inte grations
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 12 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Transforme r Specificati on 7
Ele ctrical Diagram
7.1
Figure 6 – Transformer Electrical Diagram.
Electrical Specifications
7.2
Primary Inductance
Pins 3-4, all other windings open, measured at 100 kHz,
0.4 VRMS.
546 µH ±5%
Resonant Freque ncy
Pins 3-4, all other windings open.
1200 kHz (min)
Primary Leakage
Inductance
Pins 3-4, with pins 5-6 shorted, measured at 100 kHz,
0.4 VRMS.
25 µH (max)
Materials
7.3
Item
Description
[1]
Core: EE1621; PC-40 or equivalent.
[2]
Bobbin: EE1621-Vertical – 8 pins (4/4)
Shen Zhen Xin Yu Jia Technology Ltd.
[3]
Magnet Wire: #30 AWG, double coated.
[4]
Magnet Wire: #34 AWG, double coated.
[5]
Magnet Wire: #22 AWG, Trip le Insulated Wire.
[6]
Tape: 3M 1298 Polyester Film, 2 mil thick, 5.5 mm wide.
[7]
Epoxy: Devcon, 5 Minute Epoxy, No. 14210; or equivalent.
[8]
Bus wire: #24 AWG, Belden Electronics Div; or equivalent.
[9]
Varnis h: Dolph BC-359.
3
4
1
2
WD1: Primary
54T - #30 AWG
nc
WD2: Bias
9T – 2 x #34 AWG
WD3: Shield
10T – #34 AWG
WD4: Secondary
5T – 22 AWG_TIW
6
5
FL, #24 AWG Bare wire
1
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 13 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Transformer Build Diagram
7.4
Figure 7 – Transformer Build Diagram.
T ransformer Instructions
7.5
Winding
Preparation
For the purpose of these instructions, bobbin is oriented on winder such that pin
side is on the left side.
Winding direction is clockw ise direction.
WD1
Primary
Start at pin 3, wind 54 turns wire item [2] in 3 layers (18T/layer) with tight tension.
At the l ast turn bring the w ire back to the left and fi nish at pin 4.
Insulation
1 layer of tape [6] for insulation.
WD2 & WD3
Bias & Shield
Use 3 wires item [4], start at pin 1, and wind 9 turns from left to right. At the last
turn, bring 2 wires t o the left t o termina te at pin 2 for W D2. Then cont inue wind ing
on the 3
rd
wire 1 more turn and left no-connect for WD3.
Insulation
1 layer of tape [6] for insulation.
WD4
Secondary
Start at pin 6, wind 5 t urns w ire item [ 5], spre ad wire evenl y. At the last t urn bri ng
the wire back to the left and finis h at pin 5.
Insulation
2 Layer of tape [6] to secure the windings.
Finish
Gap core halves for 546
µ
H inductance.
Place epoxy item [7] onto both center legs of core halves, (see illustration below).
Wrap core halves and bus wire item [8] with tape, (see illustration below).
Varnish with item [9].
3
4
1
2
NC
5
6
WD1: Primary 54T - #30 AWG
WD2: Bias 9T – 2x#34 AWG
WD3: Shield 10T – #34 AWG
(wound in parallel with…)
WD4: Secondary
5T – #22 AWG_TIW
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 14 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Transformer Illustrations
7.6
Winding Preparation
For the purpose of these
instructions, bobbin is
oriented on winder such
that pin side is on the left
side.
Winding direction is
clockwise direction.
WD1
Primary
Start at pin 3, wind 54
turns wire item [2] in 3
layers (18T/layer) with
tight tension. At the last
turn bring the wire back to
the left and finish at pin 4.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 15 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Insulation
1 layer of tape [6] for
insulation.
WD2 & WD3
Bias & Shield
Use 3 wires item [4], start
at pin 1, and wind 9 turns
from left to right. At the
last turn, bring 2 wires to
the left to terminate at pin
2 for WD2. Then cont inue
winding on the 3rd wire 1
more t urn and left no-
connec t for WD3.
2 wires for WD2
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 16 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Insulation
1 layer of tape [6] for
insulation.
WD4
Secondary
Start at pin 6, wind 5
turns wire item [5],
spread wire evenly. At the
last t urn bring the wire
back to the left and finish
at pin 5.
Insulation
2 layer of tape [6] to
secure the windi ngs.
3rd wire left NC
for WD3
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 17 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Finish
Gap core ha lves for 546
µH inductance.
Place epoxy item [7] onto
both center legs of core
halves, (see illustration
beside).
Wrap core halves and bus
wire item [8] with tape,
(see illustration below).
Varnish with item [9].
bus wire item [8] left ~ 40 mm
floating on primary side
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 18 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Transformer Design Spreadsheet 8
ACDC_InnoSwitch-
CH_101614;
Rev.2.0; Copyr i g ht
Power Integrations
2014
INPUT INFO OUTPUT UNIT ACDC_InnoSwitch_101614_Rev2-0;
InnoSwitch-CH Conti nuous/Di s co nti nuous
Flyback Transformer Design Spreadsheet
ENTER APPLICATION VARIABLES
VACMIN
85
V
Minimum AC Input Voltage
VACMAX
265
V
Maximum AC Input Voltage
fL
50
Hz
AC Mains Fre quency
VO 5.00
5.00 V
Output Voltage (continuous power at the end of the
cable)
IO 2.00
2.00 A
Power Supply Output Curr ent (corresponding to peak
power)
Power
10.6 W
Continuous Output Pow e r, including cable drop
compensation
n 0.82
0.82
Efficiency Estimate at output terminals. Use 0.8 if no
better data available
Z 0.50
Z Factor. Ratio of secondary side losses to the total
losses in the pow e r supply. Use 0.5 if no better data
available
tC
3.00
mSeconds
Bridge Rectifier Conduction Time Estimate
CIN 16.40 Info 16.40 uFarad
!!! Input capacitor is too small. Recommnded to
increase CIN above 19.05 uF to ensure VMIN>70 V
ENTER InnoSwitch VARIABLES
InnoSwitch-CH
INN20x3
INN20x3
User defined I nnoSwitch
Cable drop
compensation
6%
6%
Select Cable Dr op Compensation option
Complete Part
Number
INN2023K
Final part number including package
Chose Configuration INC
Increased
Current
Limit
Enter "RED" for reduced current limit (sealed
adapters), "STD" for standard current limit or "INC"
for increased current limit (peak or higher power
applications)
ILIMITMIN
0.682
A
Minimum Current Limit
ILIMITTYP
0.75
A
Typical Current Limit
ILIMITMAX
0.818
A
Maximum Current Limit
fSmin
93000
Hz
Minimum Device Switching Frequency
I^2fmin
47.25 A^2kHz
Worst case I2F parameter across the temperature
range
VOR 58
58 V
Reflected Output Volta ge (VOR <= 100 V
Recommended)
VDS
5.00
V
InnoSwitch on-state Drain to Source Voltage
KP
0.80
Ripple to Peak Cur rent Ratio at Vmin, assuming
ILIMITMIN, and I2FMIN (KP < 6)
KP_TRANSIENT
0.46
Worst case transient Ripple to Peak Current Ratio.
Ensure KP_TRANSIENT > 0.25
ENTER BIA S WINDING VAR IABLES
VB
10.00
V
Bias Winding Voltage
VDB
0.70
V
Bias Winding Diode Forward Voltage Drop
NB
9.32
V
Bias Winding Number of T urns
PIVB
102.59 V
Bias winding peak reverse voltage at VA C m ax and
assuming VB*1.2
ENTER TRANSFORMER CORE/CONSTRUCTION VARIABLES
Core Type
Custom
Custom
Enter Transformer Core
Core
EE1621
EE1621
Enter core part number, if necessary
Bobbin
0
Enter bobbin pa rt number, if necessary
AE
0.325
0.325
cm^2
Core Effective Cross Sectional Area
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 19 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
LE
3.93
3.93
cm
Core Effective Pa th Length
AL
2800
2800
nH/T^2
Ungapped Core Effective Inductance
BW
5.40
5.40
mm
Bobbin Physical Winding Width
M
0.00 mm
Safety Margin Width ( Half the Primary to Seconda ry
Creepage Distance)
L
3
3
Number of Primary Layers
NS
5
5
Number of Secondary Turns
DC INPU T VOLTAGE PARAMETERS
VMIN 62 Warning 62 V
!!! Minimum DC Input Voltage < 70 Volts. Increase
VACMIN or increase CIN
VMAX
375
V
Maximum DC Input Voltag e
CURRENT WAVEFORM SHAPE PARAMETERS
DMAX
0.50
Duty Ratio at full load, minimum primary inductance
and minimum input voltage
IAVG
0.21
A
Average Primary Current
IP
0.682
A
Peak Primary Current assuming ILIMITMIN
IR
0.546 A
Primary Ripple Current assuming ILIMITMIN, and
LPMIN
IRMS
0.31 A
Primary RMS Current, assuming ILIMITMIN, and
LPMIN
TRANSFORMER PRIMARY DESIGN PARAMETERS
LP
546 uHenry
Typical Primar y Inductance. +/- 5% to ensure a
minimum primary inductance of 518 uH
LP_TOLERANCE
5.0
5.0
%
Primary inductance tolerance
NP
54
Primary Winding Number of Turns
ALG
187
nH/T^2
Gapped Core Effective Inductance
BM
2868 Gauss
Maximum Operating Flux Density, BM<300 0 is
recommended
BAC
1147 Gauss
AC Flux Density for Core Loss Curves (0.5 X Peak to
Peak)
ur
2694
Relative Permeability of Ungapped Cor e
LG
0.20
mm
Gap Length (Lg > 0.1 mm)
BWE
16.2
mm
Effective Bobbin Width
OD
0.30
mm
Maximum Primar y Wir e Diam eter including insulation
INS
0.05 mm
Estimated Total Insulation Thickness (= 2 * film
thickness)
DIA
0.25
mm
Bare conductor diameter
AWG
31 AWG
Primary Wire Gauge (Rounded to next smaller
standard AWG value)
CM
81
Cmils
Bare conductor effective area in ci rcular mils
CMA
259 Cmils/Amp
Primary Winding Current Capacity (200 < CMA <
500)
TRANSFORMER SECONDARY DESIGN PARAMETERS
Lumped parameters
ISP
7.37
A
Peak Secondary Curr e nt, a ssuming ILIMITMIN
ISRMS
3.33
A
Secondary RMS Current
IRIPPLE
2.67
A
Output Capacitor RMS Ripple Current
CMS
667
Cmils
Secondary Bare Conductor minimum circular mils
AWGS
21 AWG
Secondary Wire Gauge (Rounded up to next larger
standard AWG value)
VOLTAGE STRESS PARAMETERS
VDRAIN
517
V
Maximum Drain Voltage Estimate
PIVS 54 V
Output Rectifier M aximum Peak Invers e Voltage,
assuming the primary has a Voltage spike 4 0% above
VMAX and VO*1.05
TRANSFORMER SECONDARY DESIGN PARAMETERS
1st output
VO1
5.30
V
Main Output Voltage directly after output r ectifier
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 20 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
IO1
2.00
A
Output DC Current
PO1
10.60
W
Output Power
VD1
0.06 V
Output Synchronous Rectification FET Forward
Voltage Drop
NS1
5.00
Turns
Output Winding Number of Turns
ISRMS1
3.33
A
Output Winding RMS Current
IRIPPLE1
2.67
A
Output Capacitor RMS Ripple Current
PIVS1 54 V
Output Rectifier Maximum Peak Inverse Voltage,
assuming the primary has a Voltage spike 4 0% above
VMAX and VO*1.05
Recommended
MOSFET
QM6006
Recommended SR FET for this output
RDSON_HOT
0.027
Ohm
RDSon at 100C
VRATED
60
V
Rated voltage of selected SR FET
CMS1
667
Cmils
Output Winding Bare Conductor minimum circular mils
AWGS1
21 AWG
Wire Gauge (Rounded up to next larger standard AWG
value)
DIAS1
0.73
mm
Minimum Bare Conductor Diameter
ODS1
1.08
mm
Maximum Outside Diameter for Triple Insulated Wire
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 21 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Performance Data 9
All measurements performed with external room ambient temperature and 60 Hz input
for 115 VAC rang e and 50 Hz f or 230 VAC i n put range.
Active Mode Efficiency (at USB Socket) vs. Line
9.1
Figure 8 – Effici en cy vs Line Voltage, Room Temperature
80
81
82
83
84
85
86
87
70 90 110 130 150 170 190 210 230 250 270 290
Efficiency (%)
Input Voltage (VAC)
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 22 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Active Mode Efficiency (at USB Socket) vs. Load
9.2
Efficiency wit hout Schottky Diode in Parallel with Q1, SR FET 9.2.1
Figure 9 – Efficiency vs Load, Room Ambient
30
35
40
45
50
55
60
65
70
75
80
85
90
010 20 30 40 50 60 70 80 90 100
Efficiency (%)
Load (%)
85 VAC
115 VAC
230 VAC
265 VAC
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 23 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 10 - Efficiency vs Load (log scale to demo nstrate light load performance)
30
35
40
45
50
55
60
65
70
75
80
85
90
0.1 1.0 10.0 100.0
Efficiency (%)
Load (%)
85 VAC
115 VAC
230 VAC
265 VAC
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 24 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Efficiency wit h a Schottky Diod e, SS16, in Parall el with Q1, SR FET 9.2.2
Figure 11 – Efficiency vs Loa d, Room Temperature, 60 Hz.
35
40
45
50
55
60
65
70
75
80
85
90
010 20 30 40 50 60 70 80 90 100
Efficiency (%)
Load (%)
85 VAC
115 VAC
230 VAC
265 VAC
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 25 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
No-Load Input Powe r
9.3
Figure 12 – No Load Input Power vs. Input Line Voltage, Room Tempe rature.
3
4
5
6
7
8
9
10
11
12
70 90 110 130 150 170 190 210 230 250 270 290
Input Power (mW)
Input Voltage (VAC)
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 26 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Average Efficiency (at USB Socket)
9.4
Efficiency Requirements 9.4.1
Test Average Average Average Average
10%
Load
10%
Load
Model
<6 V
Voltage
<6 V
Voltage
<6 V
Voltage
<6 V
Voltage
<6 V
Voltage
<6 V
Voltage
Effective
Now
2016
Now
2016
Now
2016
Power
[W]
Energy
Star 2
New
IESA2007
CoC v5
Tier 1
CoC v5
Tier 2
CoC v5
Tier 1
CoC v5
Tier 2
10
74.2%
78.7%
76.0%
79.0%
66.6%
69.7%
Average Efficiency at 115 VAC Input 9.4.2
9.4.2.1 No Schottky Diode in Par allel with Q1, SR F ET
Load
(%) VIN
(VRMS) IIN
(ARMS) PIN
(W) PF %ATHD VOUT
(VDC) IOUT
(ADC) POUT
(W) Efficiency
(%)
Average
Efficiency
(%)
100
114.98
0.19
12.473
0.566
131
5.2575
1.999
10.509
84.26
75
114.98
0.15
9.255
0.542
144.4
5.1950
1.499
7.789
84.16
50
114.99
0.10
6.078
0.505
163.5
5.1300
0.999
5.124
84.30
25
114.99
0.06
3.001
0.449
194.8
5.0550
0.500
2.525
84.14
84.21
10
114.99
0.03
1.266
0.392
231.7
5.0100
0.199
0.999
78.94
9.4.2.2 Schottky Diode, SS16, in Parallel with Q1, SR FET
Load
(%) VIN
(VRMS) IIN
(ARMS) PIN
(W) PF %ATHD VOUT
(VDC) IOUT
(ADC) POUT
(W) Efficiency
(%)
Average
Efficiency
(%)
100
114.98
0.19
12.492
0.572
129.4
5.2588
1.999
10.511
84.15
75
114.99
0.15
9.230
0.544
143.5
5.1963
1.499
7.791
84.41
50
114.99
0.10
6.060
0.508
162.6
5.1325
0.999
5.125
84.58
25
114.99
0.06
2.987
0.452
193.4
5.0563
0.500
2.526
84.55
84.42
10
114.99
0.03
1.259
0.392
231.1
5.0113
0.199
0.999
79.36
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 27 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Average Effici ency at 230 VAC Input 9.4.3
9.4.3.1 No Schottky Diode in Parallel wit h Q1, SR FET
Load
(%) VIN
(VRMS) IIN
(ARMS) PIN
(W) PF %ATHD VOUT
(VDC) IOUT
(ADC) POUT
(W) Efficiency
(%)
Average
Efficiency
(%)
100
230.04
0.12
12.364
0.450
195.1
5.2663
1.999
10.527
85.14
75
230.04
0.09
9.179
0.426
209.4
5.2000
1.499
7.797
84.94
50
230.04
0.07
6.021
0.397
228.4
5.1363
0.999
5.130
85.20
25
230.04
0.04
3.097
0.358
258.7
5.0488
0.500
2.522
81.43
84.18
10
230.04
0.02
1.273
0.312
300.9
5.0150
0.199
1.000
78.56
9.4.3.2 Schottky Diode, SS16, in P arallel with Q1, SR FET
Load
(%) VIN
(VRMS) IIN
(ARMS) PIN
(W) PF %ATHD VOUT
(VDC) IOUT
(ADC) POUT
(W) Efficiency
(%)
Average
Efficiency
(%)
100
230.04
0.12
12.329
0.449
195.6
5.2663
1.999
10.527
85.38
75
230.04
0.09
9.133
0.425
210
5.2000
1.499
7.796
85.36
50
230.04
0.07
6.007
0.397
229.2
5.1363
0.999
5.129
85.39
25
230.04
0.04
3.073
0.357
259.5
5.0488
0.500
2.522
82.06
84.55
10
230.04
0.02
1.255
0.312
301.7
5.0150
0.199
1.000
79.68
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 28 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
CV/CC Regulation Measured at the End of Cable
9.5
Figure 13 – Output Voltage vs, Output current, Room Temp erature.
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0 0.5 1.0 1.5 2.0 2.5
Outp ut Vo ltage (V)
Outp ut Current (A)
85 VAC
110 VAC
230 VAC
265 VAC
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 29 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Open Case Thermal Performance 10
Room ambient.
Figure 14 – Transformer Side.
85 VAC, 2 A Load.
Ambient = 26.3 ºC.
Figure 15 – InnoSwitch-CH Side.
85 VAC, 2 A Load.
Ambient = 27 ºC.
Figure 16 – Transformer Side.
110 VAC, 2 A Load.
Ambient = 26.2 ºC.
Figure 17 – InnoSwitch-CH Side.
110 VAC, 2 A Load.
Ambient = 25 ºC.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 30 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Figure 18 – Transformer Side.
230 VAC, 2 A Load.
Ambient = 26.5 ºC.
Figure 19 – InnoSwitch-CH Side.
230 VAC, 2 A Load.
Ambient = 25.4 ºC.
Figure 20 – Transformer Side.
265 VAC, 2 A Load.
Ambient = 26.5 ºC.
Figure 21 – InnoSwitch-CH Side.
265 VAC, 2 A Load.
Ambient = 25.3 ºC.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 31 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Waveforms 11
Load T ransient Response (end of cable)
11.1
Results were measured with 47 µF at end of cable which is the typical specified
measurement condition for m obile phone chargers.
Figure 22 – Transient R esponse (4.5 VMIN).
85 VAC, 0-2 A Load Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 23 – Transient Response (4.5 VMIN).
110 VAC, 0-2 A Loa d Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 24 – Transient R esponse (4.6 VMIN).
230 VAC, 0-2 A Loa d Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 25 – Transient R esponse (4.6 VMIN).
265 VAC, 0-2 A Load Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 32 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Load T ransient Response (at USB Socket)
11.2
Figure 26 – Transient R esponse (4.75 VMIN).
85 VAC, 0-2 A Load Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 27 – Transient R esponse (4.75 VMIN).
110 VAC, 0-2 A Loa d Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 28 – Transient R esponse (4.85 VMIN).
230 VAC, 0-2 A Loa d Step.
Upper: ILOAD, 1 A / div.
Lower : VOUT, 500 mV, 50 ms / div.
Figure 29 – Transient R esponse (4.86 VMIN).
265 VAC, 0-2 A Load Step.
Upper: ILOAD, 1 A /div.
Lower : VOUT, 500 mV, 50 ms / div.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 33 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Switchi ng Wavef o rms
11.3
InnoSwitch-CH Waveforms 11.3.1
Figure 30 – Drain Voltage a nd Current Waveforms.
85 VAC, 2 A load ,
Lower: IDRAIN, 500 mA / div.
Upper: VDRAIN, 100 V, 20 µs / div.
Figure 31 – Drain Voltage a nd Current Waveforms.
265 VAC, 2 A Load, 545 VMAX.
Lower: IDRAIN, 500 mA / div.
Upper: VDRAIN, 200 V, 20 µs / div.
SR FET Waveforms 11.3.2
Figure 32 – SR FET Voltage Waveforms.
85 VAC Input, 2 A Load.
VDRAIN, 10 V, 20 µs / div.
Figure 33 – SR FET Voltage Waveforms.
265 VAC Input , 2 A Load.
VDRAIN, 20 V, 20 µs / div. (45.4 VMAX).
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 34 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Output Ripple Measurements
11.4
Ripple Measurement Technique 11.4.1
For DC output ripple measurements, a modified oscilloscope test probe must be utilized
in order to reduce spurious signals due to pick-up. Details of the probe modification are
provided i n the Figures below.
The 4987BA probe adapter is affixed with two capacitors tied in parallel across the probe
tip. The capacitors include one (1) 0.1 µF/50 V ceramic type and one (1) 47 µF/50 V
aluminum electrolytic. The aluminum electrolytic type capacitor is polarized, so proper
polari ty across DC outputs must be maintained (see below).
Figure 34 – Oscilloscope Probe Prepared for Ripple Measurement. (End Cap and Ground Lead Removed)
Figure 35 – Oscilloscope Probe with Probe Master (www.probemaster.com) 4987A BNC Adapter.
(Modified with wires for ripple measurem ent, and two parallel decoupling capacitors a d d ed)
Probe Ground
Probe Tip
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 35 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Measurement Results 11.4.2
Measured at the end of cable.
Figure 36 – Output Ripple Voltage.
85 V
RIPPLE (VPK-PK)
115 V
RIPPLE (VPK-PK)
230 V
RIPPLE (VPK-PK)
265 V
RIPPLE (VPK-PK)
0.126 0.123 0.123 0.121
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Ripple (mV PK-PK)
Current (mA)
85 V
115 V
230 V
265 V
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 36 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Conductive EMI 12
2 A Res istive Load, Floating O utput (PK / AV)
12.1
After running 5 minutes.
Freq (MHz)
QP
Limit
Margin
0.19
50.48
63.95
13.47
Figure 37 – Floating Ground EMI at 115 VAC.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 37 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 38 – Floating Ground at 230 VAC .
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 38 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
2 A Resistive Load, Artificial Hand Ground (PK / AV)
12.2
FREQ
(MHZ)
QP LIMIT MARGIN
0.20
52.26
63.82
11.56
1.37
44.97
56
11.03
1.73
41.65
56
14.35
Figure 39 – Artificial Ground at 115 VAC.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 39 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
FREQ
(MHZ)
QP LIMIT MARGIN
0.50
43.6
56.07
12.47
0.99
47.3
56
8.7
1.62
44.51
56
11.49
4.65
41.37
56
14.63
Figure 40 – Artificial Ground at 230 VAC.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 40 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Smartphone with Monitor Se t-up (HDMI) (QP / AV)
12.3
Phone is connect ed to charger and LCD monitor. The monitor connection increases
capacitance to earth ground.
Figure 41 – HDMI at 115 VAC.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 41 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 42 – HDMI at 230 VAC.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 42 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Radiative EMI 13
Figure 43 – Radiation at 110 VAC.
Maximized quasi-peak readings (NO manipulation of EUT int erface cables)
Frequency Level Pol Detector Azimuth Height Comments
MHz
dBµV/m v/h Limit Margin Pk/QP/Avg degrees meters
30.234 23.7 V30.0 -6.3 QP 41.0 QP (1.00s)
185.989 19.4 H30.0 -10.6 QP 116 4.0 QP (1.00s)
Class B
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 43 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 44 – Radiation at 230 VAC.
Maximized quasi-peak readings (NO manipulatio n of EUT int erface cables)
Frequency Level Pol Detector Azimuth Height Comments
MHz
dBµV/m v/h Limit Margin Pk/QP/Avg degrees meters
30.287 23.8 V30.0 -6.2 QP 57 1.0 QP (1.00s)
191.605 19.9 H30.0 -10.1 QP 121 4.0 QP (1.00s)
Class B
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 44 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Audible Noise 14
Test performed inside case with microphone placed 3 mm from case surface on long side
of case, transformer facing to wa r ds microphone.
Figure 45 – Audible Noise Spectrum: No-load, VIN Swept from 85 VAC to 264 VAC.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 45 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 46 – Audible Noise Spectrum: 85 VA C , IOUT Swept from 0 A to 2.0 A.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 46 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Figure 47 – Audible Noise Spectrum: 110 VAC, IOUT Swept from 0 A to 2.0 A.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 47 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Figure 48 – Audible Noise Spectrum: 220 VAC, IOUT Swept from 0 A to 2.0A.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 48 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Figure 49 – Audible Nois e Spectrum: 265 VAC, IOUT Swept from 0 A to 2.0 A.
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 49 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
Lighting Su rge & E SD Tes t 15
Differential Mode T est
15.1
Passed ± 1 k V, 500 A surge test
Common Mode Test
15.2
Passed ± 6 K V, 500 A r i n g wave test.
Need to install plastic barrier for >5 kV ring wave comm on mode surge test.
ESD Test
15.3
Passed ± 16.5 kV air, 8 kV contact.
Need to install plastic barrier to pass ESD test.
RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger 20-Apr-15
Page 50 of 51
Power Integrations, Inc.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.powerint.com
Revision History 16
Date
Author
Revision
Description & Changes
Reviewed
11-Nov-14
DK
1.0
Initial Release
Mktg & Apps
20-Apr-15
KM
1.1
Updated Transformer Resonant
Freque n cy Spe c, CV/CC Graph and
Output Ripple Table
20-Apr-15 RDR-420 10 W 5 V, 2 A InnoSwitch-CH USB Charger
Page 51 of 51
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414
9201
For the latest updates, visit our website: www.power.com
Power Integrations reserves the right to make changes to its products at any time to improve reliability or
manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described
herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES
INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR
PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIG HTS.
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits’ external to the products)
may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications
assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.power.com. Power
Integrations grants its customers a license under certain patent rights as set forth a t htt p ://www.p ower.com/ip.htm.
The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, LYTSwitch, InnoSwtich, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero,
HiperPFS, HiperTFS, Hiper LCS, Qspeed, Ec oSm art, Clampless, E-Sh ield, F ilterfuse, FluxLink, StackFET, PI Expert and PI FACTS
are
trademarks of Power Integrations, Inc. Other trademar ks are property of their resp ective c ompanies. ©Copyright 2015
Power Integrations, Inc.
Power Integrations Worldwide Sales Support Locations
WORLD HEADQUARTERS
5245 Hellyer Avenue
San Jose, CA 95138, U SA.
Main: +1-408-414-9200
Customer Service:
Phone: +1-408-414-9665
Fax: +1-408-414-9765
e-mail: usasales@powerint.com
GERMANY
Lindwurmstrasse 114
80337, Mu n i ch
Germany
Phone: +49-895-527-39110
Fax: +49-895-527-39200
e-mail:
eurosales@powerint.com
JAPAN
Kosei Dai-3 Building
2-12-11, Shin-Yokohama,
Kohoku-ku, Yokohama-shi,
Kanagawa 222-0033
Japan
Phone: +81-45-471-1021
Fax: +81-45-471-3717
e-mail:
japansales@powerint.com
TAIWAN
5F, No. 318, Nei Hu Rd.,
Sec. 1
Nei Hu District
Taipei 11493, Taiwan R.O.C.
Phone: +886-2-2659-4570
Fax: +886-2-2659-4550
e-mail:
taiwansales@powerint.com
CHINA (SHANG HA I )
Rm 2410, Charity Plaza, No. 88,
North Caoxi Road,
Shanghai, PRC 200030
Phone: +86-21-6354-6323
Fax: +86-21-6354-6325
e-mail: chinasales@powerint.com
INDIA
#1, 14
th
Main Road
Vasanthanagar
Bangalore-560052
India
Phone: +91-80-4113-8020
Fax: +91-80-4113-8023
e-mail:
indiasales@powerint.com
KOREA
RM 602, 6F L
Korea City Air Terminal B/D,
159-6
Samsung-Dong, Kangnam-Gu,
Seoul, 135-728 Korea
Phone: +82-2-2016-6610
Fax: +82-2-2016-6630
e-mail:
koreasales@powerint.com
UK
First Floor, Unit 15, Meadway
Court, Rutherfor d Close,
Stevenage, Herts. SG1 2 EF
United Kingdom
Phone: +44 (0) 1252-730-141
Fax: +44 (0) 1252-727-689
e-mail:
eurosales@powerint.com
CHINA (SHENZHEN)
17/F, Hivac Building, No. 2, Keji
Nan 8th Road, Nanshan District,
Shenzhen, China, 51 8057
Phone: +86-755-8672-8689
Fax: +86-755-8672-8690
e-mail: chinasales@powerint.com
ITALY
Via Milanese 20, 3
rd
. Fl.
20099 Sesto San Giovanni
(MI) Italy
Phone: +39-024-550-8701
Fax: +39-028-928-6009
e-mail:
eurosales@powerint.com
SINGAPORE
51 Newton Road,
#19-01/05 Goldhill Plaza
Singapore, 308900
Phone: +65-6358-2160
Fax: +65-6358-2015
e-mail:
singaporesales@powerint.com
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Power Integrations:
RDK-420