Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 m Features * 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. * rDS(ON) = 0.200 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power-Dissipation Limited * Nanosecond Switching Speeds Formerly developmental type TA09526. * Linear Transfer Characteristics Ordering Information * High Input Impedance PART NUMBER RFP12N10L PACKAGE TO-220AB BRAND F12N10L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards Symbol D G S Packaging JEDEC TO-220AB DRAIN (TAB) (c)2005 Fairchild Semiconductor Corporation SOURCE DRAIN GATE RFP12N10L Rev. C0 RFP12N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12N10L UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 12 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 30 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS 10 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W 0.48 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 100 - - V Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250A (Figure 7) 1 - 2 V VDS = 80V - - 1 A - - 50 A VGS = 10V, VDS = 0V - - 100 nA ID = 12A, VGS = 5V (Figures 5, 6) - - 0.200 VGS = 0V, VDS = 25V, f = 1MHz (Figure 8) - - 900 pF Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IDSS IGSS rDS(ON) TC = 125oC VGS = 0V Input Capacitance CISS Output Capacitance COSS - - 325 pF Reverse-Transfer Capacitance CRSS - - 170 pF Turn-On Delay Time td(ON) - 15 50 ns - 70 150 ns td(OFF) - 100 130 ns tf - 80 150 ns 2.083 oC/W Rise Time tr Turn-Off Delay Time Fall Time Thermal Resistance Junction to Case R JC ID = 6A, VDD = 50V, RG = 6.25, VGS = 5V (Figures 9, 10, 11) TO-220 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 6A - - 1.4 V ISD = 4A, dISD/dt = 50A/s - 150 - ns NOTES: 2. Pulsed: pulse duration = 80s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. (c)2005 Fairchild Semiconductor Corporation RFP12N10L Rev. C0 RFP12N10L Typical Performance Curves Unless Otherwise Specified 100 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 ID(MAX) CONTINUOUS 10 DC OPERATION 1 60W 0.2 0 0 50 100 0.1 1 150 TC, CASE TEMPERATURE (oC) 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE VG S 30 ID(ON), ON-STATE DRAIN CURRENT (A) 20 PULSE DURATION = 80s DUTY CYCLE 0.5% TC = 25oC V = 10 5V 20 4V 10 3V 2V 0 VDS = 10V PULSE DURATION = 80s DUTY CYCLE 0.5% 15 25oC 10 125oC 5 125oC 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) -40oC 5 0 1 -40oC 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS 2.0 0.3 125oC 0.2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 1000 FIGURE 2. FORWARD BIAS OPERATING AREA 40 ID, DRAIN CURRENT (A) TC = 25oC TJ = MAX RATED OPERATION IN THIS REGION IS LIMITED BY rDS(ON) 25oC -40oC 0.1 VGS = 5V PULSE DURATION = 80s DUTY CYCLE 0.5% 0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT (c)2005 Fairchild Semiconductor Corporation VGS = 5V, ID = 12A PULSE DURATION = 80s DUTY CYCLE 0.5% 1.5 1.0 0.5 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE RFP12N10L Rev. C0 RFP12N10L Typical Performance Curves NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.2 800 VDS = VGS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD ID = 250A C, CAPACITANCE (pF) 1.3 Unless Otherwise Specified (Continued) 1.1 1.0 0.9 0.8 600 CISS 400 COSS 200 0.7 CRSS 0.6 0 50 100 0 150 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 BVDSS RL = 8.33 IG (REF) = 0.56mA VGS = 5V 8 GATE VDD = BVDSS SOURCE V = BVDSS VOLTAGE DD 6 75 50 4 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 25 2 0 0 20 50 IG (REF) IG (ACT) GATE TO SOURCE VOLTAGE (V) 0.5 -50 80 t, TIME (s) IG (REF) IG (ACT) NOTE: Refer to Fairchild Applications Notes AN7254 and AN7260 FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + - VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 FIGURE 10. SWITCHING TIME TEST CIRCUIT (c)2005 Fairchild Semiconductor Corporation 10% 50% 50% PULSE WIDTH FIGURE 11. RESISTIVE SWITCHING WAVEFORMS RFP12N10L Rev. C0 RFP12N10L Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD DUT IG(REF) VGS = 5V VGS - VGS = 1V 0 Qg(TH) IG(REF) 0 FIGURE 12. GATE CHARGE TEST CIRCUIT (c)2005 Fairchild Semiconductor Corporation FIGURE 13. GATE CHARGE WAVEFORMS RFP12N10L Rev. C0 RFP12N10L TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) GTOTM Quiet SeriesTM CTLTM TINYOPTOTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) VCXTM SuperSOTTM-8 OPTOLOGIC(R) FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2005 Fairchild Semiconductor Corporation RFP12N10L Rev. C0 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com