TLP124(TPR.F) - TOSHIBA - Datasheet.Directory

TLP124

1 2019-06-10

Toshiba Electronic Devices & Storage Corporation

TO SHIBA Photocou pler IRED & Photo-Transistor

TLP124

Programmable Controllers

AC / DC-Input Module

Solid-State Relays

The TOSHIBA mini flat coupler TLP124 is a small outline coupler, suitable for

surface mount assembly.

TLP124 consists of a photo transistor optically coupled to an infrared emitting

diode.

• Collector-emitter voltage: 80 V (min)

• Current transfer ratio: 100% (min)

Rank BV: 200% (min)

• Isolatio n volta ge: 3750 Vrms (min)

• UL-recognized: UL 1577, File No.E 6734 9

• cUL-recognized: CSA Component Acceptance Service No.5A

File No.E67349

Pin Configurations

(top view)

TOSHIBA

11-4C1

Weight: 0.09g (typ.)

Unit: mm

Start of commercial production

1988-04

1 : Anode

3 : Cathode

4 : Emitter

6 : Collector

TLP124

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Toshiba Electronic Devices & Storage Corporation

Current Transfer Ratio

Classification

(Note 1)

Current Transf er Ratio (min) Marking of

Classification

Ta = 25°C

Ta = -25 to 75°C

= 1 mA

= 0.5 V

= 0.5 mA

= 1. 5 V

= 1 mA

= 0. 5 V

Rank BV 200% 100% 100% BV

Standard 100% 50% 50% BV, Blank

Note 1: Ex, rank BV: TLP124(BV)

Note: Application type name for certification test, please use standard product type name, i, e.

TLP124(BV): TLP124

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

LED

Forward current IF 50 mA

Forward current derati ng (Ta ≥ 53°C) ΔIF/°C -0.7 mA/°C

Peak forward current

(100 μs pulse, 100 pps) IFP 1 A

Reverse voltage VR 5 V

Diode power dissipat i on

100

Diode power dissipat i on derating

(Ta ≥ 53°C)

ΔPD/°C -1.39 mW/°C

Junction temperature Tj 125 °C

Detector

Collector-emitter voltage VCEO 80 V

Emitter-collector voltage VECO 7 V

Collector current IC 50 mA

Peak collector current

(10 ms pulse, 100 pps) ICP 100 mA

Power dissipation PC 150 mW

Power dissipation derat i ng (Ta ≥ 25°C) ΔPC/°C -1.5 mW/°C

Junction temperature Tj 125 °C

Storage temperature range Tstg -55 to 125 °C

Operating tem perature range Topr -55 to 100 °C

Lead soldering temperature (10 s) Tsol 260 °C

Total package power dissi pation PT 200 mW

Total package power dissi pation

derating (Ta ≥ 25°C) ΔPT/°C -2.0 mW/°C

Isolation voltage

(AC, 60 s, R.H. ≤ 60 %) (Note 1) BVS 3750 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions ( i.e. operat ing tem per at ure/curre nt/ v oltage, et c .) are withi n the absolu te maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data ( i. e. r elia bil it y test

report and estimated failure rate, etc.).

Note 1: Devi ce con sid ered a t w o termina l device: Pi ns 1, 3 shorted together and pins 4, 6 short ed tog ether.

TLP124

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Toshiba Electronic Devices & Storage Corporation

Recommended Operating Conditions

Characteristics Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 48 V

Forward current IF ― 1.6 20 mA

Collector current IC ― 1 10 mA

Operating tem perature Topr -25 ― 75 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Tes t C ondition Min Typ. Max Unit

LED

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse Current IR VR = 5 V ― ― 10 μA

Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF

Detector

Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 80 ― ― V

Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 ― ― V

Collector dark current ICEO VCE = 48 V ― 10 100 nA

VCE = 48 V, Ta = 85 °C ― 2 50 μA

Capacitance collector to emitter CCE V = 0 V, f = 1 MHz ― 12 ― pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Conditi on Min Typ. Max Unit

Current transf er ratio IC/IF IF = 1 mA, VCE = 0.5 V Rank BV

100 ― 1200 %

200 ― 1200

Low input CTR IC/IF(low) IF = 0.5 mA, VCE = 1.5 V Rank BV

50 ― ― %

100 ― ―

Collector-emitter saturation volt age VCE(sat)

= 0.5 mA, I

= 1 mA ― ― 0.4

IC = 1 mA, IF = 1 mA Rank BV

― 0.2 ―

― ― 0.4

Off-state collector current IC(off) VF = 0.7 V, VCE = 48 V ― ― 10 μA

Coupled Electrical Characteristics (Ta = -25 to 75°C)

Characteristic Symbol Test Conditi on Min Typ. Max Unit

Current transf er ratio IC/IF IF = 1 mA, VCE = 0.5 V Rank BV

50 ― ― %

100 ― ― %

Low input CTR IC/IF(low) IF = 0.5 mA, VCE = 1.5 V Rank BV

― 50 ― %

― 100 ― %

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Toshiba Electronic Devices & Storage Corporation

Isolation Characteristics (Ta = 25°C)

Characteristics Symbol Test Conditi on Min Typ. Max Unit

Capacitance

(input to output) CS VS = 0 V, f = 1 MHz ― 0.8 ― pF

Isolation resist ance RS VS = 500 V, R.H. ≤ 60 % 5×10

― Ω

Isolation voltage BVS AC, 6 0 s 3750 — ― Vrms

Switching Characteristics (Ta = 25°C)

Characteristics Symbol Test Conditi on Min Typ. Max Unit

Rise time tr

VCC = 1 0 V , IC = 2 mA

RL = 100 Ω

― 8 ―

μs

Fall time tf ― 8 ―

Turn-on time tON ― 10 ―

Turn-off time tOFF ― 8 ―

Turn-on time tON RL = 4.7 kΩ (Fig.1)

VCC = 5 V, IF = 1.6 mA

― 10 ―

μs

Storage time ts ― 50 ―

Turn-off time tOFF ― 300 ―

Fig. 1 Switching time test circuit

VCC

VCE

tON

tOFF

4.5V

0.5V

VCC

VCE

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Toshiba Electronic Devices & Storage Corporation

IF – Ta

Ambient temperature Ta (°C)

Allowable forward current

IF (mA)

100

-20

0 20 40 60 80 120 100

PC – Ta

Ambient temperature Ta (°C)

Allowable collector power

dissipation PC (mW)

200

-20

160

120

0 20 40 60 80 120 100

∆V

/ ∆Ta – I

Forward current I

(mA)

Forward voltage temperature

coefficient

∆VF / ∆Ta (mV / °C)

-3.2

-0.4

0.1

-0.8

-2.8

-2.0

-1.6

-1.2

0.3

-2.4

1 5 50 0.5 3 10 30

IFP – DR

Duty c ycl e r atio D

Pulse forward

current IFP (mA)

3000

1000

300

100

-3

500

-2

-1

Pulse width ≤ 100μs

Ta = 25°C

IF – VF

Forward voltage V

(V)

Forward current I

F (mA)

100

0.1

0.6

0.5

0.8 1.0 1.2 1.4 1.6 1.8

0.3

Ta = 25°C

IFP – VFP

Pulse forward voltage V

(V)

Pulse forward current I

FP (mA)

1000

1.0 1.4 1.8 2.2 2.6 3.0

0.6

500

300

100

Pulse width ≤ 10μs

Repetitive

Frequency = 100Hz

Ta = 25°C

NOTE: The above charact eristics curves are present ed for reference only and not guaranteed by production test,

unless otherwise noted.

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Toshiba Electronic Devices & Storage Corporation

IC – VCE

Collector–emitter voltage V

(V)

Collector current IC (mA)

2 4 6 8 10

Ta = 25°C

0.8mA

IF = 1.0mA

0.6mA

0.5mA

0.4mA

0.2mA

0.2 0.4 0.6 0.8 1.0

IC – VCE

Collector–emitter voltage V

(V)

Collector current I

C (mA)

= 1.0mA

0.8mA

0.6mA

0.5mA

0.4mA

0.2mA

Ta = 25°C

Sample A

Forward current I

(mA)

IC – IF

Collector current I

C (mA)

0.03

0.1

0.3

0.5

3 10 1 5

0.05

0.1

0.3

Ta = 25°C

VCE = 5 V

VCE = 1.5 V

VCE = 0.5 V

Sample B

ICEO – Ta

Ambient temperature Ta (°C)

Collector dark current I

CEO (μA)

-4

0 20 40 60 80 100 120

-1

-2

-3

CE = 48V

10V

24V

– I

Forward current I

(mA)

Current transf er ratio

/ I

(%)

1000

0.1

300

100

0.5

500

3 10 1 5 0.3

Sample A

Ta = 25°C

Sample B

= 5 V

VCE = 1.5 V

VCE = 0.5 V

NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP124

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Toshiba Electronic Devices & Storage Corporation

VCE(sat) – Ta

Ambient temperature Ta (°C)

Collector–emitter saturation

voltage VCE(sat) (V)

0.14

-40

0.12

0.10

0.08

0.04

-20 0 20 40 60 100 80

0.06

0.02

F = 1mA

Ic = 0.5mA

Switching Time – RL

Load resistanc e R

(kΩ)

Switching time (

μs)

tOFF

tON

5000

300

3000

1000

500

3 10 30 50 100

100

= 25°C

IF = 1.6mA

VCC = 5V

IC – Ta

Ambient temperature Ta (°C)

Collector current IC (mA)

0.05

-20

0.5

0 20 40 60 80 100

0.3

0.1

CE = 1.5V

VCE = 0.5V

1mA

0.5mA

0.2mA

F = 2mA

NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

TLP124

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Toshiba Electronic Devices & Storage Corporation

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