NCP1370 Product Preview Dimmable Quasi-Resonant Primary Side Current-Mode Controller for LED TV Backlight The NCP1370 is a PWM current mode controller targeting isolated flyback and non-isolated constant current topologies. The controller operates in a quasi-resonant mode to provide high efficiency. Thanks to a novel control method, the device is able to precisely regulate a constant LED current from the primary side. This removes the need for secondary side feedback circuitry, biasing and an opto-coupler. The device is highly integrated with a minimum number of external components. A robust suite of safety protection is built in to simplify the design. This device supports analog/digital dimming and both modes can be combined to enhance dimming precision. The NCP1370 has a programmable peak current limit to optimize design compatibility over a wide range of applications. The controller features a standby mode with reduced current consumption. www.onsemi.com QUASI-RESONANT PWM CONTROLLER FOR LED DRIVERS MARKING DIAGRAM 8 8 1 SOIC-8 D SUFFIX CASE 751 NCP1370x ALYW G 1 Features * * * * * * * * * * * * * * NCP1370 = Specific Device Code Quasi-resonant Peak Current-mode Control Operation x = Device Option (A or B) A = Assembly Location Primary Side Sensing (no opto-coupler needed) L = Wafer Lot Wide VCC Range Y = Year Source 300 mA / Sink 500 mA Totem Pole Driver with 12 V Gate W = Work Week G = Pb-Free Package Clamp Precise LED Constant Current Regulation 1% Typical Line Feed-forward for Enhanced Regulation Accuracy PIN CONNECTIONS Low LED Current Ripple 1 ILIM DIM 500 mV 1.2% Guaranteed Voltage Reference for Current ZCD VIN Regulation CS VCC Programmable Cycle-by-Cycle Peak Current Limit GND DRV Low VCC(on) Allowing to use a Standby Power Supply to Power the (Top View) Device Analog or Digital Dimming ORDERING INFORMATION Wide Temperature Range of -40 to + 125C See detailed ordering and shipping information in the package Robust Protection Features dimensions section on page 18 of this data sheet. LED Open Circuit Protection VCC Over Voltage Protection Secondary Diode Short Protection Output Short Circuit Protection Shorted Current Sense Pin Fault Detection Typical Applications Brown-out VCC Under Voltage Lockout * TV Backlight Thermal Shutdown * Lighting with Auxiliary Power Supply Pb-free, Halide-free MSL1 Product This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. (c) Semiconductor Components Industries, LLC, 2016 February, 2016 - Rev. P1 1 Publication Order Number: NCP1370/D NCP1370 . Aux . . VDIM 1 8 2 7 3 6 4 5 VBIAS Figure 1. Typical Application Schematic for NCP1370 Table 1. PRODUCTS TABLE Block or Electrical Parameter Brown-out blanking time tBO(blank) Blanking circuit for leakage inductance reset detection VCC OVP Switching cycles count before activating the output diode short circuit protection: VCS > VCS(stop) NCP1370B NCP1370A 100 ms 2 ms ON ON Auto-recovery Latched 4 cycles 4 cycles Output Diode Short Circuit protection Auto-recovery Latched Adjustable OVP Auto-recovery timer 1 second 4 seconds CS short circuit protection (impedance measurement before startup) ON OFF High mains valley switching 3rd 2nd (all HL valleys incremented by 1) Propagation delay from ZCD to DRV high state tZCD(DEM) ON ON Table 2. PIN FUNCTION DESCRIPTION Pin N5 Pin Name Function Pin Description 2nd 1 ILIM Peak current limit and over current protection This pin sets the cycle-by-cycle peak current limit threshold and the threshold for secondary diode short detection 2 ZCD Zero Crossing Detection Connected to the auxiliary winding, this pin detects the core reset event. 3 CS Current sense This pin monitors the primary peak current. 4 GND - The controller ground 5 DRV Driver output The driver's output to an external MOSFET 6 VCC Supplies the controller This pin is connected to an external power supply. 7 VIN Brown-Out Input voltage sensing Over Voltage Protection This pin observes the HV rail and protects the circuit in case of low main conditions. This pin also sense the line voltage for the valley selection and the line feed-forward A Zener diode can also be used to pull-up the pin and stop the controller for adjustable OVP protection 8 DIM Analog / PWM dimming This pin is used for analog or PWM dimming control. An analog signal than can be varied between VDIM(EN) and VDIM100 can be used to vary the current, or a PWM signal with an amplitude greater than VDIM100. This pin is also used for the OFF mode www.onsemi.com 2 NCP1370 Internal Circuit Architecture Disable CS_NOK Internal Thermal Shutdown VCC UVLO VCC Management Standby Aux_SCP Peak Current Limits Threshold Generation VILIMIT VCC_OVP VCC Over Voltage Protection Ipkmax VCS(stop) VREF OFF OVP2 Fault Management ILIM VDD STOP CS_STOP BO_NOK Qdrv ZCD VREF VVIN VCC Clamp Circuit Zero Crossing Detection Valley Selection Aux. Winding Short Circuit Prot. S Aux_SCP V VIN DRV Qdrv Q VVLY R Line Feedforward STOP V REF OFF Mode Detection Standby CS Leading Edge Blanking Constant-Current Control DIM CS_reset Dimming Type Detection VDIMA Ipkmax STOP Enable V DIMA VILIMIT Max. Peak Current Limit VIN CS Short Protection GND VCS(stop) Disable V VIN Ipkmax Winding and Output diode Short Circuit Protection BO_NOK Brown-Out CS_NOK OVP2 CS_STOP Figure 2. Internal Circuit Architecture www.onsemi.com 3 Over Voltage Protection NCP1370 Table 3. MAXIMUM RATINGS TABLE Symbol Rating Value Unit VCC(MAX) ICC(MAX) Maximum Power Supply voltage, VCC pin, continuous voltage Maximum current for VCC pin -0.3, +35 Internally limited V mA VDRV(MAX) IDRV(MAX) Maximum driver pin voltage, DRV pin, continuous voltage Maximum current for DRV pin -0.3, VDRV (Note 1) -500, +800 V mA VMAX IMAX Maximum voltage on low power pins (except pins DIM, DRV and VCC) Current range for low power pins (except pins DRV and VCC) -0.3, +5.5 -2, +5 V mA VDIM(MAX) Maximum voltage for DIM pin -0.3, +7 V RJ-A Thermal Resistance Junction-to-Air 289 C/W TJ(MAX) Maximum Junction Temperature 150 C Operating Temperature Range -40 to +125 C Storage Temperature Range -60 to +150 C ESD Capability, HBM model (Note 2) 4 kV ESD Capability, MM model (Note 2) 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRV is the DRV clamp voltage VDRV(high) when VCC is higher than VDRV(high). VDRV is VCC unless otherwise noted. 2. This device series contains ESD protection and exceeds the following tests: Human Body Model 4000 V per Mil-Std-883, Method 3015. 3. This device contains latch-up protection and exceeds 100 mA per JEDEC Standard JESD78 Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25C, VCC = 12 V) For min/max values TJ = -40C to +125C, Max TJ = 150C, VCC = 12 V) Test Condition Symbol Min Typ Max VCC increasing VCC decreasing VCC decreasing VCC(on) VCC(off) VCC(HYS) VCC(reset) 11 9 1.8 9 12 9.5 - 9.5 13 10 - 10 Over Voltage Protection VCC OVP threshold VCC(OVP) 26 28 30 V VCC(off) noise filter VCC(reset) noise filter tVCC(off) tVCC(reset) - - 5 20 - - ms ICC(start) - - 100 mA - 250 Description Unit STARTUP AND SUPPLY CIRCUITS Supply Voltage Startup Threshold Minimum Operating Voltage Hysteresis VCC(on) - VCC(off) Internal logic reset equal to VCC(off) V Startup current Starting time from exiting OFF Mode to 1st DRV pulse tCC(start) Supply Current Device Disabled/Fault Device Enabled/No output load on pin 5 Device Switching (Fsw = 65 kHz) ms mA VCC > VCC(off) Fsw = 65 kHz CDRV = 470 pF, Fsw = 65 kHz Supply Current in OFF mode ICC1 ICC2 ICC3 0.8 - - 1.2 2.3 2.7 ICC(off) 1.4 4.0 5.0 50 mA 210 mA CURRENT SENSE AND ILIM PIN ILIM(REF) Reference current for maximum peak current limit threshold 190 Minimum value for internal VILIMIT VpinILIM < 0.5 V VILIMIT(MIN) Maximum value for internal VILIMIT Pin ILIM open VILIMIT(MAX) Difference between internal VILIMIT and ILIM pin voltage VpinILIM = 1.5 V VILIMIT(offset) -30 VCS(stop) at VpinILIM = 1.5 V VpinILIM = 1.5 V VCS(stop)1 Leading Edge Blanking Duration for VILIM (Tj = -40C to 125C) Minimum on-time (equal to tLEB) Propagation delay from current detection to gate off-state Maximum on-time 4. Guaranteed by design www.onsemi.com 4 200 0.5 2.34 V 2.6 2.86 V 30 mV 2.037 2.1 2.163 V tLEB 280 330 380 ns ton(MIN) 280 330 380 ns tILIM - 50 150 ns ton(MAX) 37.5 50 62.5 ms NCP1370 Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25C, VCC = 12 V) For min/max values TJ = -40C to +125C, Max TJ = 150C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit Minimum threshold value for immediate fault protection activation VpinILIM < 0.5 V VCS(stop)MIN 0.7 V Minimum threshold value for immediate fault protection activation Pin ILIM open VCS(stop)MAX 3.64 V CURRENT SENSE AND ILIM PIN Ratio between internal VCS(stop) and internal VILIMIT KSTOP/ILIMIT 140 % Leading Edge Blanking Duration for VCS(stop) tBCS - 200 - ns Current source for CS to GND short detection ICS(short) 400 500 600 mA Timer for measuring CS to GND short tCS(short) 12 17 22 ms Drive Resistance DRV Sink DRV Source RSNK RSRC - - 13 30 - - Drive current capability DRV Sink (Note 4) DRV Source (Note 4) ISNK ISRC - - 500 300 - - GATE DRIVE W mA Rise Time (10 % to 90 %) CDRV = 470 pF tr - 40 - ns Fall Time (90 % to 10 %) CDRV = 470 pF tf - 30 - ns DRV Low Voltage VCC = VCC(off)+0.2 V CDRV = 470 pF, RDRV=33 kW VDRV(low) 8 - - V DRV High Voltage VCC = 30 V CDRV = 470 pF, RDRV=33 kW VDRV(high) 10 12 14 V ZCD threshold voltage VZCD increasing VZCD(THI) 30 50 70 mV ZCD threshold voltage (Note 4) VZCD decreasing VZCD(THD) 20 40 60 mV ZCD hysteresis (Note 4) VZCD increasing VZCD(HYS) 8 - - mV VZCD(short) 0.8 1 1.2 V tOVLD 70 90 110 ms trecovery 3 4 5 ZERO VOLTAGE DETECTION CIRCUIT Threshold voltage for output short circuit or aux. winding short circuit detection Short circuit detection Timer VZCD < VZCD(short) Auto-recovery timer duration Input clamp voltage High state Low state s V Ipin1 = 3.0 mA Ipin1 = -2.0 mA VZCD(CH) VZCD(CL) - -0.9 8 -0.6 - -0.3 Propagation Delay from valley detection to DRV high VZCD decreasing tZCD(DEM) - - 480 ns Delay from valley lockout output to DRV latch set VZCD decreasing tLEB4 125 250 375 ns Blanking delay after on-time VREF > 100 mV tZCD(BLANK1) 1.2 1.6 2 ms Blanking delay after on-time at light load VREF < 75 mV tZCD(BLANK2) 0.6 0.8 1 ms tTIMO 5 6.5 8 ms Timeout after last demag transition LINE FEED-FORWARD KLFF 15 17 19 mA/V Ioffset(MAX) 67.5 76.5 85.5 mA Reference Voltage (after division by 2) (Tj = 25C) VREF 495 500 505 mV Reference Voltage (after division by 2) (Tj = 0C to 85C) VREF 492 500 508 mV Reference Voltage (after division by 2) (Tj =-40C to 125C) VREF 488 500 512 mV VVIN to ICS(offset) conversion ratio Offset current maximum value VpinVIN = 4.5 V CONSTANT CURRENT CONTROL 4. Guaranteed by design www.onsemi.com 5 NCP1370 Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25C, VCC = 12 V) For min/max values TJ = -40C to +125C, Max TJ = 150C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit VCS(low) 25 55 85 mV CONSTANT CURRENT CONTROL Current sense lower threshold for detection of the leakage inductance reset time Blanking time for leakage inductance reset detection tCS(low) 130 ns VREF value below which the ZCD blanking time is divided by 2 (light load) VREF decreases VREF(off) 75 mV VREF value above which ZCD blanking time is tZCD(blank1) VREF increases VREF(on) 100 mV Threshold for line range detection Vin increasing (1st to 2nd valley or 1st to 3rd transition for VREF > 0.375 V) VVIN increases VHL 2.28 2.4 2.52 V Threshold for line range detection Vin decreasing (2nd to 1st valley or 1st to 3rd transition for VREF > 0.375 V) VVIN decreases VLL 2.18 2.3 2.42 V tHL(blank) 15 25 35 ms VREF decreases VVLY1-2/2-3 350 373 396 VREF increases VVLY2-1/3-2 366 390 414 VREF decreases VVLY2-4/3-5 231 248 265 VREF increases VVLY4-2/5-3 249 267 285 VREF decreases VVLY4-7/5-8 - 150 - VREF increases VVLY7-4/8-5 - 165 - VREF decreases VVLY7-11/8-12 - 75 - VREF increases VVLY11-7/12-8 - 100 - VREF decreases VVLY11-13/12-15 - 30 - VREF increases VVLY13-11/15-12 - 40 - VREF decreases VVLY1-2/2-3 70 74.5 79 VREF increases VVLY2-1/3-2 73 78 83 VREF decreases VVLY2-4/3-5 46 49.5 53 VREF increases VVLY4-2/5-3 50 53.5 57 VREF decreases VVLY4-7/5-8 - 30 - VREF increases VVLY7-4/8-5 - 33 - VREF decreases VVLY7-11/8-12 - 15 - VREF increases VVLY11-7/12-8 - 20 - VREF decreases VVLY11-13/12-15 - 6 - VREF increases VVLY13-11/15-12 - 8 - VALLEY SELECTION Blanking time for line range detection Valley thresholds (VREF = 500 mV) 1st to 2nd valley transition at LL and 2nd to 3rd valley HL (3rd to 4th valley HL for version B) VREF decreases 2nd to 1st valley transition at LL and 3rd to 2nd valley HL (4th to 3rd valley HL for version B), VREF incr. 2nd to 4th valley transition at LL and 3rd to 5th valley HL (4th to 6th valley HL for version B), VREF decr. 4th to 2nd valley transition at LL and 5th to 3rd valley HL (6th to 4th valley HL for version B), VREF incr. 4th to 7th valley transition at LL and 5th to 8th valley HL (6th to 9th valley HL for version B), VREF decr. 7th to 4th valley transition at LL and 8th to 5th valley HL (9th to 6th valley HL for version B), VREF incr. 7th to 11th valley transition at LL and 8th to 12th valley HL (9th to 13th valley HL for version B), VREF decr. 11th to 7th valley transition at LL and 12th to 8th valley HL (13th to 9th valley HL for version B), VREF incr. 11th to 13th valley transition at LL and 12th to 15th valley HL (13th to 16th valley HL for version B), VREF decr. 13th to 11th valley transition at LL and 15th to 12th valley HL (16th to 13th valley HL for version B), VREF incr. Valley thresholds in percentage of VREF 1st to 2nd valley transition at LL and 2nd to 3rd valley HL (3rd to 4th valley HL for version B) VREF decreases 2nd to 1st valley transition at LL and 3rd to 2nd valley HL (4th to 3rd valley HL for version B), VREF incr. 2nd to 4th valley transition at LL and 3rd to 5th valley HL (4th to 6th valley HL for version B), VREF decr. 4th to 2nd valley transition at LL and 5th to 3rd valley HL (6th to 4th valley HL for version B), VREF incr. 4th to 7th valley transition at LL and 5th to 8th valley HL (6th to 9th valley HL for version B), VREF decr. 7th to 4th valley transition at LL and 8th to 5th valley HL (9th to 6th valley HL for version B), VREF incr. 7th to 11th valley transition at LL and 8th to 12th valley HL (9th to 13th valley HL for version B), VREF decr. 11th to 7th valley transition at LL and 12th to 8th valley HL (13th to 9th valley HL for version B), VREF incr. 11th to 13th valley transition at LL and 12th to 15th valley HL (13th to 16th valley HL for version B), VREF decr. 13th to 11th valley transition at LL and 15th to 12th valley HL (16th to 13th valley HL for version B), VREF incr. mV 4. Guaranteed by design www.onsemi.com 6 % NCP1370 Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25C, VCC = 12 V) For min/max values TJ = -40C to +125C, Max TJ = 150C, VCC = 12 V) Description Test Condition Symbol Min Typ Max Unit DIMMING SECTION DIM pin voltage for zero output current (OFF voltage) VDIM decreasing VDIM(EN) 0.67 0.7 0.73 V VDIM(EN) comparator hysteresis VDIM increasing VEN(HYS) - 50 - mV VDIM100 2.9 3 3.1 V DIM pin voltage for maximum output current (TJ = -40 to 125C) DIM pin voltage for maximum output current at TJ = 25C VDIM100 2.94 3 3.06 V Dimming range VDIM(range) - 2.3 - V Clamping voltage for DIM pin VDIM(CLP) - 7 - V Dimming pin pull-up current source IDIM(pullup) - 5 - mA TSHDN 130 150 170 C TSHDN(HYS) - 50 - C VBO(on) 0.90 1 1.10 V THERMAL SHUTDOWN Thermal Shutdown (Note 4) Device switching (FSW around 65 kHz) Thermal Shutdown Hysteresis (Note 4) BROWN-OUT AND OVP Brown-Out ON level (IC start pulsing) VVIN increasing Brown-Out OFF level (IC shuts down) VVIN decreasing VBO(off) 0.85 0.9 0.95 V BO comparators delay tBO(delay) - 30 - ms Brown-Out blanking time for version A tBO(blank1) 1.4 2 2.6 ms Brown-Out blanking time for version B tBO(blank2) 50 100 150 ms IBO(bias) -250 - 250 nA VVIN(clamp) 3.9 4.1 4.3 Brown-out pin bias current Clamped voltage (VIN pin left open) VIN pin open VIN pin Clamp series resistor VIN pin detection level for OVP RVIN(clamp) VVIN increasing VOVP 1 4.75 5 V kW 5.25 V tOVP(delay) 50 ms Adjustable OVP auto-recovery timer (version B) tOVP(recovery1) 1 s Adjustable OVP auto-recovery timer (version A) tOVP(recovery2) 4 s Delay before OVP confirmation 4. Guaranteed by design www.onsemi.com 7 NCP1370 Application Information The NCP1370 is a LED driver for flyback and non-isolated buck-boost / SEPIC converters. It implements a current-mode architecture quasi-resonant architecture to prevent valley-jumping instability. A proprietary circuitry ensures accurate regulation of the output current without the need of a secondary side feedback. The circuit features powerful protections to ensure a robust LED driver design without the need of extra external components or overdesign. * Quasi-Resonance Current-Mode Operation: implementing quasi-resonance operation in peak current-mode control, the NCP1370 optimizes the efficiency by switching in the valley of the MOSFET drain-source voltage. Thanks to smart control algorithm, the controller locks-out in a selected valley and remains locked until the input voltage or the output current set point significantly changes. * Primary Side Constant Current Control: thanks to a proprietary circuit, the controller accurately controls the output current without requiring a secondary side feedback (no optocoupler needed). An output current deviation below 2% is typically obtained. * VCC Over Voltage Protection: if the voltage on VCC pin exceeds an internal limit, the controller shuts down and waits 4 seconds before restarting pulsing (version B) or stays latched (A version). * Adjustable peak current limit: the cycle-by-cycle maximum peak current limit and the second over current protection level can be adjusted externally by connecting a resistor between ILIM pin and ground. * Brown-Out: the controller includes a brown-out circuit which safely stops the controller in case the input voltage is too low. The device will automatically restart if the line recovers. * Adjustable Over voltage protection: By connecting a zener diode to the VIN pin, an adjustable over voltage protection can be implemented to protect against open LEDs. Upon detection, the controller waits 4 s (version A) or 1 s (version B) before attempting to restart switching. * Cycle-by-cycle peak current limit: when the current sense voltage exceeds pin ILIM voltage VILIM, the * * * * * MOSFET is turned off for the rest of the switching cycle. Winding Short-Circuit Protection (2nd over current protection level): an additional comparator with a short LEB filter (tBCS) senses the CS signal and stops the controller if VCS reaches 140% of VILIMIT). For noise immunity reasons, this comparator is enabled only during the main LEB duration tLEB. Output Short-circuit protection: If a very low voltage is applied on ZCD pin for 90 ms (nominal), the controllers assume that the output or the ZCD pin is shorted to ground and enters shutdown. After waiting for 4 seconds, the controller restarts switching. Linear or PWM dimming: the DIM pin allows implementing both analog and PWM dimming. OFF Mode: The IC enters in OFF mode after detecting a fault and whenever the DIM pin voltage stays low during more than 4 seconds. In this mode, the IC is off and has a reduced current consumption. This allows simplifying the PCB design around the ON/OFF opto-coupler. Floating or Short pin detection: The NCP1370 protections help passing safety tests. For instance, the circuit stops operating when the CS pin is grounded or when the GND pin is open. Constant Current Control Capitalizing on the constant current control technique developed in the NCL3008X product, the NCP1370 accurately regulates the output current of a flyback converter from its primary side. By connecting the clamping capacitor of the flyback converter to the sense resistor as shown in the typical application schematic (Figure 1), we have an image of the drain current waveform and of the leakage inductance current waveform. Thus, by looking at the current sense pin waveform, the controller is able to detect the reset of the transformer leakage inductance. Indeed, the leakage inductance limits the output rectifier peak current as shown in Figure 3 where it is shown that: Nsp * ID,pk < IL,pk. Also, by monitoring the auxiliary winding voltage through the ZCD pin, we can detect the end of conduction of the secondary rectifier. www.onsemi.com 8 NCP1370 IL,pk NspID,pk Ipri(t) Isec(t) time T2 t1 ton tdemag Vaux(t) time Figure 3. Flyback Currents and Auxiliary Winding Voltage in DCM The constant current control block picks up the leakage inductor current, the end of conduction of the output rectifier and controls the drain current to maintain the output current constant. We have: I out + V REF 2N spR sense R sense + V REF 2N spI out (eq. 2) From (Equation 1), the first key point is that the output current is independent of the inductor value. Moreover, the leakage inductance does not influence the output current value as the reset time is taken into account by the controller. (eq. 1) Soft-Start Where: * VREF is the output current internal reference * Nsp is the secondary to primary transformer turns ratio: Nsp = Ns / Np * Rsense is the current sense resistor At startup or after recovering from a fault, there is a small internal soft-start of 200 ms maximum. In addition, during startup, as the output voltage is zero volts, the demagnetization time is long and the constant current control block will slowly increase the peak current towards its nominal value as the output voltage grows. Figure 5 shows a soft-start simulation example for a 9 W LED power supply. The output current value is set by choosing the sense resistor: www.onsemi.com 9 NCP1370 16.0 (V) 12.0 1 Vout 2 I out 4 VControl 3 VCS 8.00 4.00 0 800m (A) 600m 400m 200m 0 800m (V) 600m 400m 200m 0 604u 1.47m 2.34m time in seconds 3.21m 4.07m Figure 4. Startup Simulation showing the Natural Soft-start V ILIMIT + V ILIM + I LIM(REF)R ILIM Adjustable Cycle-by-Cycle Current Limit The pin ILIM allows adjusting the threshold for maximum peak current limit VILIMIT and also the 2nd over current protection (OCP2) threshold VCS(stop) which helps protecting against short circuit of the secondary winding or of the output diode. More precisely, the maximum peak current threshold VILIMIT is equal to the ILIM pin voltage and VCS(stop) value is derived from VILIMIT. By connecting a resistor between ILIM and GND pins, the value of internal cycle-by-cycle current limit VILIMIT is: (eq. 3) The threshold for immediate short circuit protection VCS(stop) is given by: V CS(stop) + 1.4 @ V ILIMIT (eq. 4) Practically, VILIMIT can be adjusted from 0.5 V to 2.6 V, meaning VCS(stop) range is from 0.7 V to 3.64 V. When the current sense voltage exceeds the internal threshold VILIMIT, the MOSFET is turned off for the rest of the switching cycle. Figure 5 shows the schematic of ILIM pin. www.onsemi.com 10 NCP1370 Vdd V ILIM(MAX) ILIM(REF) Clamp ILIM Buffer VILIM Gain VCS(stop) Clamp RILIM V ILIM(MIN) VILIM Figure 5. Block Diagram of ILIM Pin Winding and Output diode Short-Circuit Protection (OCP2) The cycle-by-cycle peak current limit threshold VILIMIT also set the maximum duty cycle for a given application. The maximum duty cycle is given by: D MAX + 1 * V REF t * v V ILIMIT T sw In parallel with the cycle-by-cycle sensing of the CS pin, another comparator with a reduced LEB (tBCS ) and a higher threshold (VCS(stop)) is able to sense winding short-circuit and stop the controller. In version B, the controller stops the DRV pulses after counting 4 cycles of VCS > VCS(stop). The controller attempts to re-start after waiting 4 seconds. In version A, after counting 4 cycles of VCS > VCS(stop), the controller stays latched. The controller is unlatched by one of the 3 following events: * VCC < VCC(off) * Standby by VDIM < VDIM(EN) during 4 seconds * BO_NOK becomes high (eq. 5) Where: * tv is the valley duration * Tsw is the switching period For switching frequencies below 100 kHz, the term tv/Tsw can be neglected: D MAX [ 1 * V REF V ILIMIT (eq. 6) After being unlatched, the controller goes into OFF Mode. S DRV Q Vdd aux UVLO Q CS Vcc management R LEB1 + Vcontrol PWMreset - 4-s timer + VCCreset Ipkmax - VILIMIT LEB2 STOP + - CS_STOP 1 pulse or 4 pulses S OFF Q VCS(stop) Q R 4-s timer from Fault Management Block Figure 6. Winding Short Circuit Protection, Max. Peak Current Limit Circuits www.onsemi.com 11 VCC NCP1370 PWM or Linear Dimming Detection Practically, when VDIM < VDIM(EN), the controller decreases the peak current from its current state to nearly zero before stopping the DRV pulses. This allows having a very good correlation between the dimming duty-cycle and the output current value when dimming at low duty-cycle. Also, it is important to note that for good correlation between the dimming duty-cycle (which represent the expected output current value relative to the nominal value) and the actual measured output current, the high state duration of the dimming signal should not be below 200 ms. Figure 8 shows the drain source waveform during soft-stop. The pin DIM allows dimming the LED light. Analog dimming or digital (PWM) dimming can be used. If the power supply designer apply an analog signal varying from VDIM(EN) to VDIM100 to the DIM pin, the output current will increase or decrease proportionally to the voltage applied. For VDIM = VDIM100, the power supply delivers the maximum output current. If a voltage lower than VDIM(EN) is applied to the DIM pin, the DRV pulses are disabled. Thus, for digital dimming, a PWM signal with a low state value lower than VDIM(EN) and a high state value higher than VDIM100 should be applied. The DIM pin is pulled up internally by a small current source or resistor. Thus, if the pin is left open, the controller is able to start. OFF Mode with DIM Pin The OFF Mode is entered when VDIM stays below VDIM(EN) for 4 seconds. In this mode, IC consumption is reduced to ICC(off) (below 50 mA). The OFF mode is exited only when VDIM becomes higher than VDIM(EN)+VEN(HYS). Soft Stop during PWM Dimming The NCP1370 features an internal soft-stop of 200 ms maximum in order to compensate the output current decrease caused by the soft-start during PWM dimming. VDIM 3V 0.7 V Analog dimming V DIM100 100% Iout V DIM(EN) 0% Iout PWM dimming Deep PWM dimming Figure 7. Pin DIM Chronograms VDIM Vdrain Figure 8. Soft-stop www.onsemi.com 12 NCP1370 goes through a complete sequence OFF Mode FAULT Mode (see Fault Management section for more information) In the latched mode, the controller stops pulsing and waits that one of the 3 following events occurs to reset the latch: * VCC < VCC(off) * Standby by VDIM < VDIM(EN) during 4 seconds * BO_NOK becomes high When the OVP Latch is reset, the controller goes into OFF Mode. VCC Over Voltage Protection In order to protect itself against too high supply voltage, the controller features an over voltage protection for the VCC pin. When the VCC voltage reaches the VCC(OVP) threshold, the controller stops the DRV pulses and shutdown. Depending on the version, the controller goes in auto-recovery mode (version B) or in latched mode (version A). In the auto-recovery mode, the controller waits 4 s and tries to re-start. In order to restart pulsing, the controller VCC VCC(OVP) OVP VCC(on) VCC(off) VDIM VDIM(100) VDIM(EN) STATE VDRV RESET OFF RUN 4-s Timer RUN IIIIII IIIIII IIIIII FAULT CS impedance check OFF IIIIII IIIIII IIIIII FAULT CS impedance check Figure 9. VCC Over Voltage Protection Chronograms Valley Selection The input voltage is sensed by the VIN pin. The internal logic selects the operating valley according to VIN pin voltage and DIM pin voltage. By default, when the output current is not dimmed, the controller operates in the first valley at low line and in the second valley at high line for version A. For version B, the controller operates in the 3rd valley at high line. Table 5 summarizes the valley selected by the controller as a function of the output current and the input voltage. The numbers in blue are the selected valleys for version B. Quasi-Square wave resonant systems have a wide switching frequency excursion. The switching frequency increases when the output load decreases or when the input voltage increases. The switching frequency of such systems must be limited. The NCP1370 changes valley as the input voltage increases and as the output current set-point is varied during dimming. This limits the switching frequency excursion. Once a valley is selected, the controller stays locked in the valley until the input voltage or the output current set-point varies significantly. www.onsemi.com 13 NCP1370 Table 5. VALLEY SELECTION VIN pin voltage for valley change Iout value at which the controller changes valley (Iout decreasing) 0 -- LL -- 100% 75% 50% 30% 15% 2.3 V -- HL -- (Iout increasing) 5V 100% 1st 2nd (3rd) 2nd 3rd (4th) 4th 5th (6th) 7th 8th (9th) 11th 12th (13th) 13th 15th (16th) 78% Iout increases Iout decreases Iout value at which the controller changes valley VVIN decreases 53% 33% 20% 6% 8% 0% 0 -- LL -- 2.4 V -- HL -- 0% 5V VVIN increases VIN pin voltage for valley change Zero Crossing Detection Block At startup or in case of extremely damped free oscillations, the ZCD comparator may not be able to detect the valleys. To avoid such a situation, the NCP1370 features a Time-Out circuit that generates pulses if the voltage on ZCD pin stays below the 55-mV threshold for 6.5 ms. The Time-out also acts as a substitute clock for the valley detection and simulates a missing valley in case of too damped free oscillations (Figure 11). The ZCD pin allows detecting when the drain-source voltage of the power MOSFET reaches a valley. A valley is detected when the voltage on pin 1 crosses down the 55-mV internal threshold. In order to decrease the capacitor value needed on ZCD pin to turn-on the MOSFET right in the valley or in some case remove it, a small delay (250 ns) is added internally before turning-on the MOSFET. Tblank Time-Out ZCD . VZCD(TH) + Clock - Tblank VZCD(short) + - 90-ms Timer Enable_b S Q Q R 4-s Timer Figure 10. ZCD Block Schematic www.onsemi.com 14 Aux_SCP NCP1370 3 4 high The 3rd valley is validated 14 2nd , 3rd low high VZCD V ZCD(th ) 12 The 2nd valley is detected By the ZCD comparator The 3rd valley is not detected by the ZCD comp low high 15 low ZCD comp 16 TimeOut adds a pulse to account for the missing 3rd valley high low TimeOut 17 Clock Figure 11. Time-out Chronograms Output Short Circuit Protection Line Feed-Forward Because of the time-out function, if the ZCD pin or the auxiliary winding is shorted, the controller will continue switching leading to improper regulation of the LED current. Moreover during an output short circuit, the controller will strive to maintain the constant current operation. In order to avoid these scenarios, a secondary timer starts counting when the ZCD voltage is below the VZCD(short) threshold (Figure 10). If this timer reaches 90 ms, the controller detects a fault and enters the auto-recovery fault mode: the controller stops pulsing and waits 4-s before going through a complete startup sequence. This protection is disabled when VDIM < VDIM(EN). Because of the propagation delays, the MOSFET is not turned-off immediately when the current set-point is reached. As a result, the primary peak current is higher than expected and the output current increases. To compensate the peak current increase brought by the propagation delays, a positive voltage proportional to the line voltage is added on the current sense signal. The amount of offset voltage can be adjusted using the RCS resistor as shown in Figure 12. V CS(offset) + K LFF V pinVIN R CS (eq. 7) The offset voltage is applied only during the MOSFET on-time. This offset voltage is always applied over the load range. www.onsemi.com 15 NCP1370 noise delay + - S Q Bulk rail VOVP OVP2 Q R Aux 4-s Timer (1-s Timer version B) vDD VIN . I CS(offset) CS RCS Clamp Rclamp R sense Q_drv Vclamp + Blanking time - BO_NOK 1 V if BONOK high 0.9 V if BONOK low Figure 12. Line Feed-Forward, Adjustable OVP and Brown-out Schematic Adjustable Over Voltage Protection A clamping circuit on VIN pin limits the voltage excursion to 4.1 V (Figure 12). This level is high enough to allow good linearity of the line feedforward current for universal mains applications with an input voltage up to 265 V rms. When the zener diode starts conducting, it injects current inside the clamping circuit and the voltage on VIN pin increases. When VVIN exceeds VOVP during tOVP(delay), the circuit detects an over voltage condition and stops the DRV pulses. The controller waits until the OVP timer (tOVP(recovery)) has elapsed (4 s for version A, 1 s for version B) and restarts switching. * Brown-out In order to protect the supply against a very low input voltage, the NCP1370 features a brown-out circuit with a fixed ON/OFF threshold (Figure 12). The controller is allowed to start if a voltage higher than 1 V is applied to the VIN pin and shuts-down if the VIN pin voltage decreases and stays below 0.9 V when the BO blanking timer has elapsed (BO_NOK high). When a brown-out condition is detected, the circuit stops pulsing and goes into the OFF mode detailed in the "Fault Management Section". 110 W typically, the circuit does not start pulsing and shutdown. The circuit attempts to restart after waiting 4 seconds. In practice, it is recommended to place a minimum of 250 W in series between the CS pin and the current sense resistor to take into account parasitic component effect and electrical parameters tolerance. Fault of GND pin connection If the GND pin is properly connected, the current drawn from the positive terminal of the VCC capacitor flows out of the GND pin to return to the negative terminal of the VCC capacitor. If the GND pin is not connected, the circuit ESD diodes offer another return path. The accidental non-connection of the GND pin is monitored by detecting that one of the ESD diode is conduction. Practically, the ESD diode of CS pin is monitored. If such a fault is detected for 200 ms, the circuit stops generating DRV pulses. Fault Management and Startup Sequence Figure 13 and Figure 14 shows the state diagrams of the NCP1370. OFF Mode At startup, as long as VCC is not high enough, the controller is reset. Its current consumption is ICC(start). When VCC > VCC(on), the controller goes in OFF mode and waits for the enable signal (VDIM > VDIM(EN)). In OFF mode, the IC consumption is very low (50 mA maximum). Pin Connection Faults * CS pin Short to ground The circuit senses the CS pin impedance every time it starts-up. If the measured impedance does not exceed www.onsemi.com 16 NCP1370 * An Output / Auxiliary winding Short circuit is detected: The OFF mode is exited only if VCC > VCC(on) and VDIM > VDIM(EN). The controller then goes in FAULT mode. More generally, the OFF mode is entered upon the following events: * VCC < VCC(off) * Brown-out edge * VDIM < VDIM(EN) after 4 seconds * Die over temperature (TSD) * The 4-s auto-recovery timer has elapsed "Aux_SCP high" * Second OCP level triggered When the 4-s timer has elapsed, the controller goes in OFF Mode. Adjustable OVP Management When the adjustable OVP on VIN pin is triggered, the controller stops the DRV pulses and starts the OVP2 Timer (4 s in version A, 1 s in version B). When the OVP2 timer has elapsed, the controller goes in FAULT mode and restart switching if no other fault is detected. FAULT Mode In this mode, the controller measures CS pin impedance. If CS pin is not shorted the controller is allowed to start the DRV pulses. If CS pin is shorted, the controller starts the 4 seconds timer. No DRV pulse is generated in this mode. Latched Protection (VCC OVP, Output Diode Short Circuit Protection in Version A) When VCC > VCC(OVP) or when the 2nd OCP is triggered, the DRV pulses stop and the controller is latched (Figure 14). The Latch resets when one of the 3 following events occurs: * VCC < VCC(off) * VDIM < VDIM(EN) during 4 seconds * BO_NOK becomes high AR Mode In the auto-recovery mode, the 4 seconds timer is counting, DRV is not pulsing. The 4 seconds timer starts counting when: * VDIM < VDIM(EN) * A short circuit on CS pin is detected * VCC > VCC(OVP) RESET Timer ends (AR_end) or BO_NOK edge or TSD_end or VCC < VCC(off) VddINT POR VCC too low OFF BO_NOK edge or TSD_end or VCC < VCC(off) BO_NOK edge or TSD_end or VCC < VCC(off) VDIM > VDIM(EN) and VCC > VCC(on) Timer ends OVP2 Timer FAULT mode OVP2 CS_OK OVP2 CS_short high or VCC_OVP high or VDIM < VDIM(EN) AR mode VDIM > VDIM(EN) and all other faults low RUN VCC_OVP high or VDIM < VDIM(EN) or CS_stop or Aux_SCP a Controller is dead With states: RESET a Controller is in OFF Mode, ICC = ICC(off) (50 A max.) OFF FAULT Mode a No switching, ICC = ICC1 a Controller is switching RUN a the 4-s auto-recovery timer is counting, No switching AR Mode OVP2 Timer a The OVP2 Timer (4-s or 1-s) is counting, No DRV pulses Figure 13. Fault State Diagram with Auto-recovery Faults www.onsemi.com 17 NCP1370 RESET VddINT POR VCC too low Timer ends (AR_end) or BO_NOK edge or TSD_end or VCC < VCC(off) OFF BO_NOK edge or TSD_end or VCC < VCC(off) BO_NOK edge or TSD_end or VCC < VCC(off) VDIM > VDIM(EN) and VCC > VCC(on) Timer ends OVP2 Timer VCC < VCC(off) or BO_NOK high or VDIM < VDIM(EN) during 4 s FAULT mode CS_short high or VDIM < VDIM(EN) OVP2 AR mode LATCH VCC_OVP high CS_OK OVP2 VDIM > VDIM(EN) and all other faults low VDIM < VDIM(EN) or Aux_SCP RUN VCC_OVP high or CS_stop With states: RESET OFF FAULT Mode RUN AR Mode OVP2 Timer a Controller is dead a Controller is in OFF Mode, CC I = ICC(off) (50 A max.) a No switching, ICC = ICC1 a Controller is switching a the 4-s auto-recovery timer is counting, No switching a The OVP2 Timer (4-s or 1-s) is counting, No DRV pulses Figure 14. Fault State Diagram with Latched Faults ORDERING INFORMATION Device NCP1370BDR2G Package Type Shipping SOIC-8 (Pb free) 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AK 8 1 SCALE 1:1 -X- DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. A 8 5 S B 0.25 (0.010) M Y M 1 4 -Y- K G C N X 45 _ SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb-Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb-Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC-8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC-8 NB CASE 751-07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N-SOURCE 2. N-GATE 3. P-SOURCE 4. P-GATE 5. P-DRAIN 6. P-DRAIN 7. N-DRAIN 8. N-DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC-8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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