Medium Power Transistor Description: A general purpose, NPN medium power silicon, transistor in a TO-220 type package designed for switching and amplifier applications. This device is especially designed for series and shunt regulators and as a driver and output stage of high-fidelity amplifiers. Features: * Pin Configuration 1. Base 2.Collector 3. Emitter 4.Collector Low saturation voltage Absolute Maximum Ratings: * * * * * * * * * * * * Collector-Base Voltage, Vcbo = 50V Collector-Emitter Voltage, Vceo = 40V Emitter-Base Voltage, Vebo = 5V Continuous Collector Current = 15A Continuous Base Current = 5A Total Device Dissipation (Tc = +25C), Pd = 75W Derate Linearly Above 25C = 0.6W / C Total Device Dissipation (Ta = +25C) Pd =1.8W Derate Linearly Above 25C = 0.0144W / C Operating Junction Temperature Range, Topr = -65C to +150C Storage Temperature Range, Tstg = -65C to +150C Lead Temperature (During Soldering, 1/8" (3.17mm) from case, 10sec max. Tl = +235C Thermal Resistance, Junction-to Case, Rthjc = 1.67C / W Thermal Resistance, Junction-to-Ambient, Rthja = 70C / W www.element14.com www.farnell.com www.newark.com Page <1> 12/07/12 V1.0 Medium Power Transistor Electrical Characteristics : Tc = +25C unless Otherwise specified Parameter Symbol Test Condition Min. Max Unit Iceo Vce = 20V, Ib = 0 Vce = 45V, Vbe = -1.5V - 1 mA - 0.5 mA Vce = 15V, Vbe = -1.5V, Tc = +100C - 5 mA Veb = -5V, Ic =0 - 1 mA Vceo(sus) Ic = 100mA, Ib + 0, (Note 1) 40 - V Ic = 5A, Vce = 4V, (Note 1) 20 150 - Ic = 15A, Vce = 4V, (Note 1) 5 - - Ic = 5A, Vce = 4V, (Note 1) - 1.3 V Ic = 15A, Vce = 4V, (Note 1) - 3.5 V Ic = 5A, Ib = 500mA, (Note 1) - 1.3 V Ic = 15A, Ib = 5A, (Note 1) - 3.5 V Vce = 4V, Ic = 1A, f = 1MHz 5 - - Vce = 4V, Ic = 1A 5 - MHz Ic = 1A, Vce = 4V, f = 1MHz 5 - - N O Collector Cutoff current Icex Emitter Cutoff Current Iebo Collector-Emitter sustaining Voltage DC Current Gain hfe Base-Emitter Voltage Vbe(on) Collector-Emitter Saturation Voltage Vce(sat) Small signal Forward Current Transfer Ratio Hfe Gain Bandwidth Product ft Small Signal Forward Current Transfer Ratio |hfe| Note 1. Pulsed: Pulse Duration = 300us, Duty Factor = 2% Dimensions A B C D E F G H Min. 14.42 9.63 Max. 16.51 10.67 J K 3.65 - 1.15 3.75 2.29 4.83 0.9 1.4 3.88 2.79 L M 2.54 - 3.43 0.56 12.70 2.8 2.03 - 14.73 4.07 2.92 31.24 7 Dimensions : Millimeters Part Number Table Description Part Number Medium Power Transistor, Silicon, TO-220, NPN 2N6486 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 12/07/12 V1.0