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Page <1> V1.012/07/12
Medium Power Transistor
Description:
A general purpose, NPN medium power silicon, transistor in a TO-220 type package
designed for switching and amplier applications. This device is especially designed
for series and shunt regulators and as a driver and output stage of high-delity
ampliers.
Absolute Maximum Ratings:
• Collector-Base Voltage, V
cbo
= 50V
• Collector-Emitter Voltage, V
ceo
= 40V
• Emitter-Base Voltage, V
ebo
= 5V
• Continuous Collector Current = 15A
• Continuous Base Current = 5A
• Total Device Dissipation (T
c
= +25°C), P
d
= 75W
Derate Linearly Above 25°C = 0.6W / °C
• Total Device Dissipation (T
a
= +25°C) P
d
=1.8W
Derate Linearly Above 25°C = 0.0144W / °C
• Operating Junction Temperature Range, T
opr
= -65°C to +150°C
• Storage Temperature Range, T
stg
= -65°C to +150°C
• Lead Temperature (During Soldering, 1/8" (3.17mm) from case, 10sec max. T
l
= +235°C
• Thermal Resistance, Junction-to Case, R
thjc
= 1.67°C / W
• Thermal Resistance, Junction-to-Ambient, R
thja
= 70°C / W
Pin Conguration
1. Base
2.Collector
3. Emitter
4.Collector
Features:
• Low saturation voltage
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Page <2> V1.012/07/12
Medium Power Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Dimensions A B C D E F G H J K L M N O
Min. 14.42 9.63 3.65 -1.15 3.75 2.29 2.54 -12.70 2.8 2.03 -7°
Max. 16.51 10.67 4.83 0.9 1.4 3.88 2.79 3.43 0.56 14.73 4.07 2.92 31.24
Dimensions : Millimeters
Description Part Number
Medium Power Transistor, Silicon, TO-220, NPN 2N6486
Part Number Table
Parameter Symbol Test Condition Min. Max Unit
Collector Cutoff current
I
ceo
V
ce
= 20V, I
b
= 0 - 1 mA
I
cex
V
ce
= 45V, V
be
= -1.5V -0.5 mA
V
ce
= 15V, V
be
= -1.5V, T
c
= +100°C - 5 mA
Emitter Cutoff Current I
ebo
V
eb
= -5V, I
c
=0 - 1 mA
Collector-Emitter sustaining Voltage V
ceo(sus)
I
c
= 100mA, I
b
+ 0, (Note 1) 40 - V
DC Current Gain h
fe
Ic = 5A, V
ce = 4V, (N
ote 1) 20 150 -
Ic = 15A, V
ce = 4V, (N
ote 1) 5 - -
Base-Emitter Voltage V
be(oN)
Ic = 5A, V
ce = 4V, (N
ote 1) - 1.3 V
Ic = 15A, V
ce = 4V, (N
ote 1) - 3.5 V
Collector-Emitter Saturation Voltage V
ce(sat)
I
c
= 5A, I
b
= 500mA, (Note 1) -1.3 V
I
c
= 15A, I
b
= 5A, (Note 1) -3.5 V
Small signal Forward Current Transfer Ratio H
fe
V
ce
= 4V, I
c
= 1A, f = 1MHz 5 - -
Gain Bandwidth Product f
t
V
ce
= 4V, I
c
= 1A 5 - MHz
Small Signal Forward Current Transfer Ratio |h
fe|
I
c
= 1A, V
ce
= 4V, f = 1MHz 5 - -
Electrical Characteristics : T
c
= +25°C unless Otherwise specied
Note 1. Pulsed: Pulse Duration = 300us, Duty Factor = 2%