MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM200HA-2H * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 3 93 C 4 E 16 20 6.5 E 62 9 B 9 20 48 BX C BX 4 16 B (29) 6.5 M6 M6 25.5 41.5 M4 (21) 36 (13) LABEL Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V Conditions 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open IC Collector current DC -IC Collector reverse current DC (forward diode current) 200 A PC Collector dissipation TC=25C 1560 W IB Base current DC 10 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 2000 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 -- Mounting torque B(E) terminal screw M4 BX terminal screw M4 -- Typical value Weight ELECTRICAL CHARACTERISTICS 7 V 200 A 2500 V 1.96~2.94 N*m 20~30 kg*cm 1.96~2.94 N*m 20~30 kg*cm 0.98~1.47 N*m 10~15 kg*cm 0.98~1.47 N*m 10~15 kg*cm 460 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 4.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 4.0 mA IEBO Emitter cutoff current VEB=7V -- -- 800 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.5 V VBE (sat) Base-emitter saturation voltage -- -- 3.5 V -VCEO Collector-emitter reverse voltage -IC=200A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=200A, VCE=2.8V/5V 75/100 -- -- -- -- -- 3.0 s Switching time VCC=600V, IC=200A, IB1=-IB2=4A -- -- 15 s -- -- 3.0 s Transistor part -- -- 0.08 C/ W Diode part -- -- 0.35 C/ W Conductive grease applied -- -- 0.04 C/ W IC=200A, IB=4A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 320 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) 400 IB=4.0A IB=2.0A 240 IB=1.0A IB=0.4A 160 IB=0.2A 80 Tj=25C 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 1.8 2.2 2.6 3.0 BASE-EMITTER VOLTAGE 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 1 0 IC=50A IC=200A IC=100A Tj=25C Tj=125C ton, ts, tf (s) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 IB=4A Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 3 VCE(sat) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) IC=300A VBE(sat) 10 -1 10 0 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VBE (V) 4 Tj=25C Tj=125C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 10 0 7 5 4 3 2 VCE=2.8V 10 2 7 5 3 2 VCE (V) VCE=2.8V Tj=25C VCE=5.0V 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 3 2 10 1 SATURATION VOLTAGE 0 10 4 7 5 3 2 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 BASE CURRENT IB (A) 10 2 7 VCC=600V 5 IB1=-IB2=4A Tj=25C 3 Tj=125C 2 ts 10 1 7 5 3 2 tf 10 0 7 5 ton 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE 10 2 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 400 VCC=600V IB1=4A IC=200A 10 1 7 5 4 3 2 ts tf 10 0 10-1 Tj=25C Tj=125C 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) SWITCHING TIME VS. BASE CURRENT (TYPICAL) IB2= -4A 300 200 Tj=125C 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) IB2=-10A 0 7 5 3 2 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 0 10 2 3 4 5 710 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.08 Zth (j-c) (C/ W) 80 0.06 0.04 0.02 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 VCE (V) 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 0.10 1000 800 SECOND BREAKDOWN AREA 90 DERATING FACTOR (%) S 600 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) 1m DC 400 DERATING FACTOR OF F. B. S. O. A. 50S S 10 2 100S 200 COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 200 COLLECTOR-EMITTER VOLTAGE TIME (s) 10 3 7 5 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM200HA-2H HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=4A Tj=25C 3 Tj=125C 2 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 Irr 10 2 7 5 3 2 10 1 trr (s) 2000 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Qrr 10 1 10 0 7 5 trr 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.40 Zth (j-c) (C/ W) 0.32 0.24 0.16 0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/