DATA SHEET
The information in this document is subject to change without notice.
© 1992
Document No. P12991EJ4V0DS00 (4th edition)
(Previous No. LC-2227)
Date Published August 1997 NS
Printed in Japan
PHOTOCOUPLER
PS2565-1,-2, PS2565L-1,-2
HIGH ISOLATION VOLTAGE
AC INPUT RESPONSE TYPE
MULTI PHOTOCOUPLER SERIES
The mark
shows major revised points.
DESCRIPTION
The PS2565-1, -2 and PS2565L-1, -2 are optically coupled isolators containing GaAs light emitting diodes and an
NPN silicon phototransistor.
PS2565-1, -2 are in a plastic DIP (Dual In-line Package) and PS2565L-1, -2 are lead bending type (Gull-wing) for
surface mount.
FEATURES
• AC input response
• High isolation voltage BV = 5 000 Vr.m.s.: standard products
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)
• High collector to emitter voltage (VCEO = 80 V)
• High current transfer ratio (CTR = 200 % TYP.)
• High-speed switching (t r = 3
µ
s TYP., tf = 5
µ
s TYP.)
• UL approved (File No. E72422 (S) )
• CSA approved (No. CA 101391)
• BSI approved (BS415, BS7002) No. 7112
• SEMKO approved (SS4410165) No. 9317144
• NEMKO approved (NEK-HD 195S6) No. A21409
• DEMKO approved (Section 101, 137) No. 300535
• FIMKO approved (E69-89) No. 167265-08
• VDE0884 approved (Option)
APPLICATIONS
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
2
PS2565-1,-2,PS2565L-1,-2
PACKAGE DIMENSIONS (in millimeters)
DIP Type
5.1 MAX.
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
7.62
0.50 ± 0.10
0.25 M
PS2565-1 (New Package)
10.2 MAX.
1.25±0.15
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
7.62
0.50 ± 0.10
0.25 M0 to 15˚
PS2565-2
0 to 15˚
PS2565-1
4.6 ± 0.35
1.25±0.15
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
0.50 ± 0.10
0.25 M0 to 15˚
7.62
2.54
1.25±0.15
PS2565L1-1
5.1 MAX.
6.5
3.8
MAX.
4.25
MAX.
2.8
MIN.
0.35
2.54
7.62
0.50 ± 0.10
0.25 M0 to 15˚
1.25±0.15
10.16
43
12
87
12
65
34
43
12
43
12
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
Caution New package 1ch only
3
PS2565-1,-2,PS2565L-1,-2
Lead Bending Type
5.1 MAX.
6.5
3.8
MAX.
2.54
7.62
0.25 M
PS2565L-1 (New Package)
10.2 MAX.
1.25±0.15
6.5
3.8
MAX.
2.54
7.62
PS2565L-2
PS2565L-1
4.6 ± 0.35
1.25±0.15
6.5
3.8
MAX.
0.25 M
7.62
2.54
1.25±0.15
0.05 to 0.2
9.60 ± 0.4
0.90 ± 0.25
0.05 to 0.2
9.60 ± 0.4
0.90 ± 0.25
0.25 M
0.05 to 0.2
9.60 ± 0.4
0.90 ± 0.25
5.1 MAX.
6.5
3.8
MAX.
2.54
7.62
0.25 M
PS2565L2-1
1.25±0.15
0.05 to 0.2
10.16
0.9 ± 0.25
12.0 MAX.
43
12
87
12
65
34
43
12
43
12
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
Caution New package 1ch only
4
PS2565-1,-2,PS2565L-1,-2
ORDERING INFORMATION
Part Number Package Safety Standard Approval Application part
number*1
PS2565-1
PS2565L-1
PS2565L1-1
PS2565L2-1
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface
mount)
Standard products PS2565-1
PS2565-2
PS2565L-2 8-pin DIP
8-pin DIP (lead bending surface mount) PS2565-2
PS2565-1-V
PS2565L-1-V
PS2565L1-1-V
PS2565L2-1-V
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface
mount)
VDE0884 approved products (Option) PS2565-1
PS2565-2-V
PS2565L-2-V 8-pin DIP
8-pin DIP (lead bending surface mount) PS2565-2
*1 As applying to Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2565-1,
PS2565L-1 PS2565-2,
PS2565L-2
Diode Forward Current (DC) IF80 mA
Power Dissipation Derating
∆
PD/°C 1.5 1.2 mW/°C
Power Dissipation PD150 120 mW/ch
Peak Forward Current*1 IFP 1A
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7V
Collector Current IC50 mA/ch
Power Dissipation Derating
∆
PC/°C 1.5 1.2 mW/°C
Power Dissipation PC150 120 mW/ch
Isolation Voltage*2 BV 5 000
3 750*3 Vr.m.s.
Operating Ambient Temperature TA–55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
*3 VDE0884 approved products (Option)
• UL approved • CSA approved
• BSI approved • NEMKO approved
• DEMKO approved • SEMKO approved
• FIMKO approved
5
PS2565-1,-2,PS2565L-1,-2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ±10 mA 1.17 1.4 V
Terminal Capacitance CtV = 0 V, f = 1.0 MHz 100 pF
Transistor Collector to E mi t t e r D a rk
Current ICEO VCE = 80 V, IF = 0 mA 100 nA
Coupled Current Transfer Ratio CTR IF = ±5 mA, VCE = 5 V 80 200 400 %
CTR Ratio*1 CTR1/
CTR2
IF = 5 mA, VCE = 5 V 0.3 1.0 3.0
Collector Sat ura t i on
Voltage VCE (sat) IF = ±10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kV 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time *2 trVCC = 10 V, IC = 2 mA, RL = 100 Ω3
µ
s
Fall Time *2 tf5
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 *2 Test circuit for switching time
V
CC
V
OUT
R
L
= 100 Ω
50 Ω
PW = 100 s
Duty Cycle = 1/10
µ
I
F
Pulse Input
I
F1
I
F2
I
C1
I
C2
V
CE
6
PS2565-1,-2,PS2565L-1,-2
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
150
100
50
0255075
100 125 150
1.5 mW/˚C
1.2 mW/˚C
150
100
50
25 50 100 125 1500
10 000
100
1 000
100
10
1
7550250–25–50
V
CE
= 80 V 10
1.0
0.80.60.40.20
5
1
0.5
0.1
10 mA
40
1.5 mW/˚C
1.2 mW/˚C
20 mA
50 mA
2 mA
I
F
= 1 mA
5 mA
40 V
24 V
10 V
5 V
PS2565-1
PS2565L-1
PS2565-2
PS2565L-2
PS2565-1
PS2565L-1
PS2565-2
PS2565L-2
–1.0
80
–1.5
–40
–80
–60
0–0.5 0.5 1.51.0
0
–20
40
20
60
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0 ˚C
–25 ˚C
–55 ˚C
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE(sat)
(V)
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA) Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
75
7
PS2565-1,-2,PS2565L-1,-2
1.2
–50
1.0
0.8
0.6
0.4
0.2
0–25 0 25 50 75 100
450
400
350
300
250
200
150
100
50
00.05 0.1 0.5 1 5 10 50
50
10
1
0.1 10 k
5 k
1 k
5001005010
1 000
100
10
1100 k50 k10 k5 k1 k500100
0
–5
–10
–15
–20
0.5 1 2 5 10 20 50 100200 500
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,,,,,,,,,
IC = 2 mA,
VCC = 10 V,
CTR = 290 %
tf
tr
td
ts
IF = 5 mA,
VCC = 5 V,
CTR = 290 %
t
s
t
d
t
r
t
f
IF = 5 mA,
VCE = 5 V
100 Ω
300 Ω
RL = 1 kΩ
70
2
60
50
40
30
20
10
046810
20 mA
IF = 5 mA
10 mA
50 mA
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Normalized to 1.0
at TA = 25 ˚C,
IF = 5 mA, VCE = 5 V
Forward Current IF (mA)
Ambient Temperature TA (˚C)
Load Resistance RL (Ω)Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain GV
Load Resistance RL (Ω)
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
FREQUENCY RESPONSE
Switching Time t ( s)
µ
8
PS2565-1,-2,PS2565L-1,-2
I
F
= 5 mA
T
A
= 25 ˚C
I
F
= 5 mA
T
A
= 60 ˚C
1.2
1.0
0.8
0.6
0.4
0.2
010
2
10
3
10
4
10
5
Time (Hr)
CTR (Relative Value)
LONG TIME CTR DEGRADATION
TYP.
9
PS2565-1,-2,PS2565L-1,-2
TAPING SPECIFICATIONS (in millimeters)
Taping Direction
PS2565L-1-E3
PS2565L-1-F3 PS2565L-1-E4
PS2565L-1-F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
5.6±0.1
8.0±0.1
Outline and Dimensions (Reel)
Packing: PS2565L-1-E3, E4 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
PS2565L-1-E3, E4: 250
PS2565L-1-F3, F4: 330
φ
80.0±5.0
φ
φ
PS2565L-1-F3, F4 2 000 pcs/reel
10
PS2565-1,-2,PS2565L-1,-2
Taping Direction
PS2565L-2-E3 PS2565L-2-E4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
10.4±0.1
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4+2.0
–0.0
80.0±5.0
φ
330
φ
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
11
PS2565-1,-2,PS2565L-1,-2
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
Caution
Please avoid to removed the residual flux by water after the first reflow processes.
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
12
PS2565-1,-2,PS2565L-1,-2
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 300 Vr.m.s.
for rated line voltages ≤ 600 Vr.m.s. IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength maximum operating isolation voltage
Test voltage (partial discharge test procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
890
1 068 Vpeak
Vpeak
Test voltage (partial discharge test procedure b for random test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 7.0 mm
Creepage distance > 7.0 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA–55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C
VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN.
Ris MIN. 1012
1011 Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi)
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
13
PS2565-1,-2,PS2565L-1,-2
[MEMO]
14
PS2565-1,-2,PS2565L-1,-2
[MEMO]
15
PS2565-1,-2,PS2565L-1,-2
[MEMO]
PS2565-1,-2,PS2565L-1,-2
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
