Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Feb.1999
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.68Ω
¡ID ..........................................................................................10A
300
±30
10
30
90
–55 ~ +150
–55 ~ +150
2.0
V
V
A
A
W
°C
°C
g
FS10UM-6
VDSS
VGSS
ID
IDM
PD
Tch
Tstg—
10.5MAX. 4.5 1.3
φ 3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54 2.54
4.5MAX.
0.5 2.6
7.0
qwe
q GATE
w DRAIN
e SOURCE
r DRAIN
r
wr
q
e
OUTLINE DRAWING Dimensions in mm
VGS = 0V
VDS = 0V
Typical value
Symbol Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
TO-220
MITSUBISHI Nch POWER MOSFET
FS10UM-6
HIGH-SPEED SWITCHING USE
APPLICATION
SMPS, DC-DC Conver ter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
Feb.1999
100
80
60
40
20
0200150100500
10
–1
7
5
3
2
10
1
7
5
3
2
23 5710
1
23 5710
2
23 5710
3
10
0
7
5
3
2
7
52
T
C
= 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
10
8
6
4
2
00 4 8 12 16 20
P
D
= 90W
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
6V
5V
5.5V
20
16
12
8
4
00 1020304050
P
D
=
90W T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
6V
5V
7V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Nch POWER MOSFET
FS10UM-6
HIGH-SPEED SWITCHING USE
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
300
±30
—
—
2
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.52
2.6
6.0
570
110
20
17
25
60
30
1.5
—
—
—
±10
1
4
0.68
3.4
—
—
—
—
—
—
—
—
2.0
1.39
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
40
32
24
16
8
00 4 8 12 16 20
I
D
= 20A
T
C
= 25°C
Pulse Test
15A
10A
5A
40
32
24
16
8
00 4 8 12 16 20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
–1
10
1
7
5
3
2
10
0
23 5710
1
10
0
7
5
3
2
23 5710
2
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C
75°C
23 5710
1
10
3
7
5
3
2
10
2
7
5
3
2
23 5710
2
10
0
10
1
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
t
f
t
d(off)
t
r
t
d(on)
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2
23 5710
1
23 5710
0
23
7
5
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
02310
–1
5710
0
23 5710
1
23 5710
2
1.0
0.8
0.6
0.4
0.2
T
C
= 25°C
Pulse Test V
GS
= 10V
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
MITSUBISHI Nch POWER MOSFET
FS10UM-6
HIGH-SPEED SWITCHING USE
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10UM-6
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10
0
7
5
3
2
10
–1
–50
10
1
7
5
3
2
0 50 100 150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
20
16
12
8
4
00 8 16 24 32 40
V
DS
= 50V
200V
Tch
= 25°C
I
D
= 10A
100V
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
T
C
= 125°C
25°C
75°C
V
GS
= 0V
Pulse Test
