/ 1N4099 thru / 1N4135 / Microsemi Corp. and f The diode expens 4 N46 4 4 th ru / SCOTTSDALE, AZ 1N4627 } / (con) 941-6300 call: DO . 7 FEATURES ZENER VOLTAGE 1.8V to 100V SILICON ALL HAVE JAN, JANTX and JANTXV - 1 QUALIFICATIONS TO MIL-S-19500/435 400 mw LOW NOISE LOW NOISE LOW REVERSE LEAKAGE ZENER DIODES MAXIMUM RATINGS Junction and Storage Temperatures: - 65C to + 200C DC Power Dissipation: 400 mW Power Derating: 2.66 mW/C above 50C in DO-7 Forward Voltage @ 200 mA: 1.0 Volts 1N4099 - 1N4135 @ 100 mA: 1.0 Volts 1N4614 - 1N4627 { * _ oe ELECTRICAL CHARACTERISTICS @ 25C 0.107 max T MAXIMUM | NOMINAL MAXIMUM MAXIMUM MAXIMUM TEMP. COEFF ZENER ZENFR ZENER MAXIMUM NOISE ZENER OF 1.000 JEDEC VOLTAGE TEST IMPEDANCE REVERSE DENSITY | CURRENT ZENER a6'4g9 MIN. {YPE Vzlz7 | CURRENT 22T CURRENT No @ Iz7T lzmM VOLTAGE . NO {Note 1) '2r (Note 2} IZ@VR (Figure 2) (Note 3) az VOLTS BA OHMS BA VOLTS pVvidaz mA %/OC \ 1N4614 18 250 1200 75 1 1 120 -0.075 300 1N4615 2.0 250 1250 5.0 1 1 110 -0.075 POLARITY 7630 MAX. 1N4616 2.2 250 1300 4.0 1 1 100 -0.075 MARK IN461? 24 250 1400 2.0 1 1 96 -0.075 (CATHODE) v 1N4G18 27 250 100 1.0 1 1 90 -0.075 1N4619 30 250 1600 08 1 1 87 -0.075 | 14620 33 250 1650 75 15 1 85 -0.075 ' 1N46?71 36 250 1700 75 2 1 83 -0.065 1.060 ae MIN 1N4622 3.9 250 1650 5.0 2 1 80 -0.060 25.400 1N4623 43 250 1600 40 2 1 77 -0.050 0.018/0.022 1N4624 47 250 1550 10.0 3 i 75 -0.050 +0.020 0457/0 559 DIA. 1N4625 54 250 1500 10.0 3 2 70 -0.045 +0.030 i 1N4626 56 250 1400 10.0 4 4 65 -0.020 +0.040 ' 1N4697 6.2 250 1200 10.0 5 5 61 -0.010 +0.050 ot 14099 68 250 200 10.0 5.17 40 56 0.060 1N4100 75 250 200 10.0 5.70 40 51 0.065 FIGURE 1 1N4101 8.2 250 200 1.0 6.24 40 46 0,070 Alt di : _ INCH 1Na102 a7 250 200 10 661 40 44 0.075 imensions I | 1N4103 91 250 200 1.0 6.92 40 42 0.080 1N4104 10 250 200 1.0 7.60 40 38 0.080 1N4105 " 250 200 05 8.44 40 35 0.080 1N4106 12 250 200 05 9.12 40 32 0.080 1N4107 13 250 200 05 | 987 40 29 0.080 MECHANICAL 1N4108 14 250 200 05 | 10.65 40 27 0.085 CHARACTERISTICS 1N4109 18 250 100 05 | 11.40 40 2 9.085 1N4140 16 250 100 05 {12.15 40 24 .085 . : INaTIT Vv 250 100 05 | 12.92 40 22 0.030 CASE: Hermetically sealed glass 1N4112 18 250 100 05 | 13.67 40 21 0.090 case. DO-7. 1N4113 19 250 150 05 14.44 40 20 0.090 TNaT14 20 250 750 01 | 15.20 40 19 0.090 FINISH: All external surfaces are 1N4115, 22 250 150 ot | 16.72 40 7 0.090 : : 1 1 INA116 24 250 150 01 | 18.25 40 16 0.090 corrosion resistant and leads sol- 1NA11? 25 250 150 01 719.00 40 15 0.090 derable. 1N4118 27 250 150 1 20.45 40 14 0,090 1N4119 28 250 200 01 | 21.28 40 14 0.095 THERMAL RESISTANCE: 300C/ 1N4120 30 250 200 01 22.80 40 13 0.095 1 7 1naq?y 33 250 200 01 | 25.08 40 12 0.095 W (Typical) junction to lead at 1N4122 36 250 200 o1 | 27.38 40 in) 0.095 0.375-inches from body on DO-7. 1N4123 39 250 200 o1 | 29.65 40 98 0.095 POLARITY: Diod b 4 1N4124 43 250 250 01 | 32.65 40 89 0.095 : iode rate 1N4125 47 250 250 01 35.75 40 8.1 0.095 . h to be ope at 1N4126 61 250 300 01 | 38.76 40 75 0.100 with the banded end positive 1N4127 56 250 300 01 | 42.60 40 67 0.1 ; ; 1N4128 60 250 400 01 | 4560 40 64 0,100 with respect to the opposite end. 1N4129, 62 250 500 o1 | 47.10 40 61 0.100 : 1N4130 68 250 70 01 51.68 40 5.6 0.100 WEIGHT: 0.2 grams. 1N4131 79 250 700 01 | 57,00 40 5.1 0,100 . 1IN4129 22 250 800 01 62.32 40 46 9,100 MOUNTING POSITION: Any. 1N4133 87 250 1000 Ot 66.12 40 44 0.100 1N4134 91 250 1200 or | 69.16 40 42 0.100 1N4135 100 250 1500 ot} 76.00 40 28 0.100 JEDEC Registered Data. 5-25 1N4099 thru 1N4135, 1N4614 thru 1N4627 DO-7 Noise density, (Np) is specified in microvolts-rms per square-root-hertz. Actual measurement is performed using a 1 KHz to3 KHz frequency bandpass filter at a constant Zener test current (Iz-7) at 25C ambient temperature. Np is caleulated from the formula. BATTERY SHIELDED \ () POWER (+) TEST O SUPPLY 6 CIRCUIT | (LOW NOISE t { SOURCE) BLOCKING CAPACITOR eee = = Lo SZ 4 z AMPLI- 8 FIER 2 2 FILTER = fo = 2 KHz 5 BP = 1 to 3 KH, x TRUE VNoIse = RMS | id - VOLT METER 25 50 76 100 125 150 175 200 T., Lead temperature (C) 3/8 trom body FIGURE 2 NOISE DENSITY MEASUREMENT CIRCUIT FIGURE 3 POWER DERATING CURVE 2000 000 800 vi 600 Qo 400 og eo c S x 3 a o oO 100 SB 80 At zero volts 2 00 Fw At -2 volts w o =m 40 66 80) 60 120 140 60 680 (200 Zener Voltage FIGURE 4 CAPACITANCE VS. ZENER VOLTAGE (TYPICAL) NOTE1 The JEDEC type numbers shown with no suffix have a standard tolerance of 5% on the nominal Zener voltage: suffix C is used to identify + 2%; and suffix D is used to identify + 1% tolerance. Vz is measured with the diode in thermal equilibrium in 25C still air. NOTE 2 Zener impedance is derived by superimposing on I, a 60 Hz rms a.c. current equal to 10% of Iz; (25 pA a.c.). NOTE 3 Based upon 400 mW maximum power dissipation at 25C ambient 5-26 temperature, allowance has been made for the higher voltage associated with operation at higher currents. _