DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. BYD17 SERIES blue binder, tab 7 CONTROLLED AVALANCHE RECTIFIER DIODES Rectifier diodes in hermetically sealed leadless SMID* envelopes and intended for general purpose rectifier applications. The device is capable of absorbing reverse transient energy. QUICK REFERENCE DATA BYD170| G {| s | K [ M Crest working voltage VRWM max. 200 | 400 | 600 | 800 ; 1000 V > 226 | 450 | 650 | 900 ; 1100 V Reverse avalanche breakdown voltage V(gR)R < 1600 | 1600 | 1600 | 1600 | 1600 Vv Average forward current 'Eravy = max. 1,5 A Non-repetitive peak forward current les max. 20 A Non-repetitive peak reverse power dissipation PRsm max. 0,4 kW Junction temperature Tj max. 175 C MECHANICAL DATA Dimensions in mm Fig. 1 SOD-87. j~._ 3,6 + 0,2 >! +03 = 2,05 @0 +0,05 ' 7Z293696.1 _ 19 Od1= , 01 The diodes may be either type-branded or colour-coded. The coloured end indicates the cathode. * Surface-mounted implosion diode. co Mullard |e 1986 BYD17 SERIES _ RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Crest working reverse voltage Continuous reverse voltage Average forward current (averaged over any 20 ms period) Ttp = 105 C; lead length 10 mm Tamb = 65 C; p.c. board mounting Repetitive peak forward current Tip = 55 OC; f = 50 Hz;a=3; {inclusive derating for Tj max at VRRM = 1000 V) Non-repetitive peak forward current t =10ms, half-sine wave; Tj = Tj max prior to surge; Vr = VRWMmax Non-repetitive peak reverse power dissipation; t = 20 ys (half-sine wave); Tj = Tj max Prior to surge Non-repetitive peak reverse avalanche energy; |p = 0,34 A; T; = Tj max Prior to surge; with inductive load switched off Storage temperature Junction temperature THERMAL RESISTANCE Influence of mounting method 1. Thermal resistance from junction to tie-point at a lead length of 10 mm 2. Thermal resistance from junction to ambient; device mounted on an 1,5 mm thick epoxy-glass printed circuit board; Cu-thickness > 40 yum (see Fig. 2) 50 VRwM VR 1F(AV) IF(AV) lFRM lFSM PRSM Reh j-tp Rth j-a 45 sib 1 ll 02,5 elle 1,25 FZ9EIB9 max, max. max. max, BYD17D | G | J }K {MM 200 | 400 je 200 | 400 | 600 1,5 0,6 5,5 20 0,4 7 65 to+ 175 175 30 150 Fig. 2 Mounted on a printed-circuit board. 800 800 | 1000 V 1000 V kw mJ 9 o K/w K/AW April 1986 ( Mullard c DEVELOPMEN! DAIA Controlled avalanche rectifier diodes | BYD17 SERIES CHARACTERISTICS Tj = 25 C unless otherwise specified BYD17D | G | J | K | M Forward voltage* IF = 1A; 7; = Tjmax Ve < 0,93 | 0,93 | 0,93 | 0,93 | 0,93 V IFEITA VE < 1,05 | 1,05; 1,05; 1,05 | 1,05 V Reverse GNalanche breakdown voltage V > 225 | 450| 650! 900 | 1100 v Rotem (BRR =< 1600 | 1600 | 1600 | 1600 1 1600 V _ Reverse current VR = VRWMmax IR < 1 BA VR = VRWMmax: Tj = 165 C IR < 100 pA Diode capacitance VR =0;f=1 MHz Cq typ. 21 pF T= 175C / C 12 1,6 0 0,4 08 Vp (Vv) Fig. 3 Maximum forward voltage. * Measured under pulse conditions to avoid excessive dissipation. M87-1103/RST Mullard ) ( sn 1988