IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 24 A IC90 TC = 90C 12 A ICM TC = 25C, 1 ms 48 A SSOA (RBSOA) VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 300 H ICM = 24 @ 0.8 VCES A PC TC = 25C 100 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque with screw M3 Mounting torque with screw M3.5 VCES IC25 VCE(sat) tfi(typ) TO-220 AB (IXGP) C (TAB) G E TO-263 AA (IXGA) G E G = Gate, E = Emitter, C 300 g l l l Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. BVCES IC = 250 A, VGE = 0 V 600 VGE(th) IC = 250 A, VGE = VGE 2.5 ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = ICE90, VGE = 15 V (c) 1999 IXYS All rights reserved TJ = 25C TJ = 125C C = Collector, TAB = Collector Features l 4 Weight Test Conditions C (TAB) 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol = 600 V = 24 A = 2.1 V = 120 ns V 5.0 V 200 1.5 A mA 100 nA 2.1 V Moderate frequency IGBT and antiparallel FRED in one package New generation HDMOSTM process International standard package JEDEC TO-220AB and TO-263AA High peak current handling capability Applications l l l l PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies 98601 (3/99) IXGA 12N60BD1 IXGP 12N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 5 Cies S 860 pF 100 pF Cres 15 pF Qg 32 nC 10 nC 10 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 11 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc Inductive load, TJ = 25C 20 ns tri IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 20 ns tfi Eoff td(on) tri Eon td(off) Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG RthJC IGBT tfi Test Conditions ns 120 270 ns 0.5 0.8 mJ 20 ns 20 ns 0.15 mJ 200 ns 200 ns 0.8 mJ Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA Outline K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. I F = 15A; T VJ = 150C T VJ = 25C 1.3 IRM V R = 100 V; I F =25A; -di F /dt = 100 A/s L < 0.05 H; T VJ = 100C trr IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C RthJC 250 0.25 Reverse Diode (FRED) VF 150 A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side 1.25 K/W RthCK Symbol Pins: 2 - Collector 4 - Collector Dim. td(on) td(off) TO-220 AB Outline 2 2.5 V V 2.5 A 35 Diode 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side ns 1.6 K/W Min. Recommended Footprint (Dimensions in inches and mm) Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025