© 1999 IXYS All rights reserved
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C24A
IC90 TC= 90°C12A
ICM TC= 25°C, 1 ms 48 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 33 Ω ICM = 24 A
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 VCES
PCTC= 25°C 100 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 4g
IXGA 12N60BD1 VCES = 600 V
IXGP 12N60BD1 IC25 = 24 A
VCE(sat) = 2.1 V
tfi(typ) = 120 ns
Features
lModerate frequency IGBT and anti-
parallel FRED in one package
lNew generation HDMOSTM process
lInternational standard package
JEDEC TO-220AB and TO-263AA
lHigh peak current handling capability
Applications
lPFC circuit
lAC motor speed control
lDC servo and robot drives
lSwitch-mode and resonant-mode
power supplies
98601 (3/99)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 600 V
VGE(th) IC= 250 µA, VGE = VGE 2.5 5.0 V
ICES VCE = 0.8 VCES TJ = 25°C 200 µA
VGE = 0 V TJ = 125°C 1.5 mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= ICE90, VGE = 15 V 2.1 V
G
EC (TAB)
TO-263 AA (IXGA)
G
E
TO-220 AB (IXGP)
C (TAB)
HiPerFASTTM IGBT
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGA 12N60BD1
IXGP 12N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= IC90; VCE = 10 V, 5 11 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 860 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
Cres 15 pF
Qg32 nC
Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 10 nC
Qgc 10 nC
td(on) 20 ns
tri 20 ns
td(off) 150 250 ns
tfi 120 270 ns
Eoff 0.5 0.8 mJ
td(on) 20 ns
tri 20 ns
Eon 0.15 mJ
td(off) 200 ns
tfi 200 ns
Eoff 0.8 mJ
RthJC IGBT 1.25 K/W
RthCK 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
Inductive load, TJ = 125°°
°°
°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 18 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 VCES, higher TJ or
increased RG
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 AA Outline
Pins: 1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = 15A; TVJ = 150°C 1.3 V
TVJ = 25°C 2.5 V
IRM VR = 100 V; IF =25A; -diF/dt = 100 A/µs 2 2.5 A
L < 0.05 µH; TVJ = 100°C
trr IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C35ns
RthJC Diode 1.6 K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
