FDC6321C en FAIRCHILD eran SEMICONDUCTOR m FDC6321C Dual N & P Channel , Digital FET General Description These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors. SuperSOT-6 Mark:.321 pini> SuperSOT-6 April 1998 Features N-Ch 25 V, 0.68 A, Rggion = 0.45 Q @ Vog= 4.5 V B P-Ch-25 V, -0.46 A, Rogiory = 1:12 @ Vog= -4.5 V. Very low level gate drive requirements allowing direct operation in 3 V circuits. Ves) < 1.0V. = Gate-Source Zener for ESD ruggedness. >6kV Human Body Model = Replace multiple dual NPN & PNP digital transistors. Absolute Maximum Ratings T, = 25C unless other wise noted Symbol | Parameter N-Channel P-Channel Units Voss Veco | Drain-Source Voltage, Power Supply Vottage 25 25 Voss: Vy __ | Gate-Source Voltage, 8 8 V las bo Drair/Output Current -- Continuous 0.68 0.46 - Pulsed 2 15 P, Maximum Power Dissipation (Note 1a) 0.9 Ww (Note 1b) 07 Ty T sre Operating and Storage Tempature Ranger -55 to 150 Cc ESD Electrostatic Discharge Rating MIL-STD-883D 6 kV Human Body Mode! (100pf / 1500 Ohm) THERMAL CHARACTERISTICS Pasa Thermal Resistance, Junction-to-Ambient (Note 1a) 140 CW Rac Thermal Resistance, Junction-to-Case (Note 1) 60 CW 5-60 FDC6321C .Rev A1Electrical Characteristics (T, = 25C unless otherwise noted) Symbol _| Parameter | Conditions | Type Min | Typ | Max | Units OFF CHARACTERISTICS BV oc Drain-Source Breakdown Voltage Veg = OV, |= 250 pA N-Ch | 25 Vv Veg =0V, |= -250 pA P-Ch | -25 ABV ,/AT, Breakdown Voltage Temp. Coefficient |= 250 LA, Referenced to 25C N-Ch 26 mV C |= -250 yA, Referenced to 25C P-Ch 22 loss Zero Gate Voltage Drain Current Vog= 20 V, Vag= 0 V, N-Ch 1 pA [T, =55;C 10 loss Zero Gate Voltage Drain Current Vog =-20V, Vag= OV, P-Ch -1 pA [7, =56;C 10 less Gate - Body Leakage Current Vog =8V, Vig= OV N-Ch 100 nA Veg =-BV, Vyg= OV P-Ch -100 nA ON CHARACTERISTICS (note 2) MVegn/AT, Gate Threshold Voltage Temp. Coefficient | 1,= 250 yA, Referenced to 25C N-Ch 26 mV /C 1,= -250 YA, Referenced to 25C Ph 21 Vosiny Gate Threshold Voltage Vos = Ves: Ip = 250 NA N-Ch| 0.65 | 0.8 15 v Vos = Veg: [p= -250 WA P-Ch | 0.65 | -0.86 | -1.5 Posen) Static Drain-Source On-Resistance Veg =4.5V, 1, =0.5A N-Ch 0.33 | 0.45 Q [T, =125C ost | 072 Vog = 2.7 V, 1, = 0.254 0.44 | 06 Vog = 4-5 V, |p=O5A P-Ch 0.87 | 1.1 [T, =125iC 121 | 18 Vog = 2-7 V, | =-0.25 A 122 | 15 lyon On-State Drain Current Vog = 4.5 V, Vyg=5V N-Ch] 1 A Veg = 4-5 V. Vag = 5 V P-Ch| -1 Ors Forward Transconductance Vog = SV, I= O.5A N-Ch 1.45 s Vog= OV, I=-O.5A P-Ch 0.8 DYNAMIC CHARACTERISTICS C., Input Capacitance N-Channel N-Ch 50 pF Vog= 10 V, Vag= 0 V, P-Ch 63 Coss Output Capacitance f = 1.0 MHz N-Ch 28 pF P-Channel P-Ch 34 Cos Reverse Transfer Capacitance Vps= 710 V, Vag = OV, N-Ch 9 pF f = 1.0 MHz Ph 10 5-61 FDC6321C .Rev A1 JLee900AElectrical Characteristics (1, = 25C unless otherwise noted) SWITCHING CHARACTERISTICS (note 2) FDC6321C Symbol Parameter Conditions Type | Min | Typ | Max | Units tony Tum - On Delay Time N-Channel N-Ch 3 6 ns Vop = 6 V, p= 0.5 A, P-Ch 7 20 t, Tum - On Rise Time Voc = 4.5 Vs Rogy = 50D N-Ch 8 16 ns P-Ch 9 18 toro Tum - Off Delay Time P-Channel N-Ch 17 30 nS Vop = 6 V, |p = -0.5 A, P-Ch 55 110 t Tum - Off Fall Time Veen = 4.5 V, Reg, = 50 2 N-Ch 13 25 nS P-Ch 35 70 Q, Total Gate Charge N-Channel N-Ch 1.64 | 23 nc Vog2 5 V, |, =0.5 A, P-Ch | 15 Q,, Gate-Source Charge Veg = 4.5V N-Ch 0.38 nc P- Channel P-Ch 0.32 Qy Gate-Drain Charge Vog = 5 V, N-Ch 0.45 nc |, =-0.25 A, Vg =-4.5V P-Ch 0.25 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.3 A P-Ch 05 Vsp Drain-Source Diode Forward Voltage Vgg = OV, I= 0.5 A (oie) N-Ch 0.83 | 12 V [T, =125C 0.69 | 085 Veg = OV, I= -0.5A (note) P-Ch 089 | -12 [T, =125C 0.75 | -0.85 Notes: 1. Ry, is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R,,. is guaranteed by design while R,,,, is determined by the user's board design QOD AG f L a. 140C/W on a 0.125 in pad of \ b. 180C/W on a 0.005 in of pad 20z copper af 202 copper. 4 yt SHO ae G 2. Pulse Test: Pulse Width < 300yus, Duty Cycle < 2.0%. 5-62 FOC6321C .Rev AtTypical Electrical Characteristics: N-Channel (p , DRAIN-SOURCE CURRENT (A) 0 0.5 1 1.5 2 Vpg ORAIN-SQURCE VOLTAGE (V) Figure 1. On-Region Characteristics . 1.6 T [ T Ip s0.5A 14}- Vag=4.5V a RpS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 08 A WL 50 25 Q 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C} Figure 3. On-Resistance Variation with Temperature . T T Vg = 5.0V Ty = -55C 25C 125C Q a tp. DRAIN CURRENT (A) - to WH 0 05 1 15 2 25 Vgg: GATE TO SOURCE VOLTAGE (V} Figure 5. Transfer Characteristics. R DS(on) , NORMALIZED DRAIN-SQURCE ON-RESISTANCE 02 0.4 06 0.8 1 12 |p , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. a ho @ a RoSion), ON-RESISTANCE (OHM) o 1 16 2 25 3 3.5 4 45 5 Ves GATE TO SOURCE VOLTAGE (V) Figure 4. On Resistance Variation with Gate-To - Source Voltage. = = rye Ty= 125C = oA 2 oO z 0.01 a w Ww Cc Es 2 0.001 ec 2 0.0001 0 02 04 06 08 1 12 Vgp BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 5-63 FDC6321C .Rev Al OLee90GsFDC6321C Typical Electrical Characteristics: N-Channel (continued) a 150 = o 100 Oo4 = c o & 50 > Ww ws 9 Zz o < ac: FE 3. 3 B 2 = 7 E & ey 10 wn g > 5 oO O41 Os 1 2 5 10 25 9 4 08 12 16 2 Vig. DRAIN TO SOURCE VOLTAGE () Q, . GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 5 5 4 SINGLE PULSE < 1 Pgs =See note 1b 5 Ta= 25C wi = =3 03 oi = Zz C2 < 04 * Vas = 4.5V 6 SINGLE PULSE 1 ~ 0.03 R qA= See note 1b Ta= 25C 0 0.01 bt op OB 2 B10) DOO 0.01 0.1 1 10 100 300 Vpg- DRA! N-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 5-64 FDC6321C Rev A1Typical Electrical Characteristics: P-Channel -ID . DRAIN-SOURCE CURRENT (A) = -4.5V 35 36 0 1 2 3 4 5 Vg, ORAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. g 1.6 T I 2 i 3 Ip =-0.54 | A w I a 6 14| Ves=-45V og He No ZG 12 ze oz zo su | 62 3 & 208 2 i < ' c i O 06 -50 25, 0 26 50 75 100 125 150 Ty JUNCTION TEMPERATURE (C) Figure 13. On-Resistance Variation with Temperature. A T T Vos=-5V T, = 58C Jf . ac < > -0.75 S 5 Y 125C w E J 3-05 4 zZ 4 a a 2 0.25 fy 0 A 0.5 aA 15 2 -2.5 3 V gg GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. Rpsion), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Ripsion). ON-RESISTANCE (OHM) -lg, REVERSE DRAIN CURRENT (A) V gg -2.0V a) 02 0.4 06 08 1 -y , DRAIN CURRENT (A) Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. a 15 2 25 3 4.5 4 45 5 V gg: GATE TO SOURCE VOLTAGE (V) Figure 14. On Resistance Variation with Gate-To-Source Voltage. 05 01 J= 125C 0.01 0.001 0.0001 0 0.2 O4 06 0.8 1 1.2 Vgp, BODY DIODE FORWARD VOLTAGE {V) Figure 16. Body Diode Forward Voitage Variation with Source Current and Temperature. 5-65 FDC6321C .Rev A1 Jlze9o0dsFDC6321C Typical Electrical Characteristics: P-Channel (continued) -fp. DRAIN CURRENT (A) 5 T T 7 S | Ip=-05A Vos = wVY w | -10V : <4 SIAN ~ I Le g ! yj -+-- 4g ~ 4 Oo z 5 f 8B 2 5 w z S oO ~ +} -..--. - 10 o 4 oS > 0 . a Q 03 06 09 12 15 1.8 Qg . GATE CHARGE (nC) Figure 17. Gate Charge Characteristics. 2 1 03 & = = oc w 0.1 3S Vv a Vog = 4.5 0.03 SINGLE PULSE ~ __ Pasa = See Note 1b Ty = 25C 0.01 whe ee EE 01 02 05 1 2 5 10 20040 - Vpg, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. rit), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 05 02 Ot 0.05 0.02 0.01 Single 0.01 0.4 t, TIME (sec) 50 20 = 1MHz os =0V 03 05 1 5 -V pg, DRAIN TO SOURCE VOLTAGE (V) 10 15 25 Figure 18. Capacitance Characteristics. Be 4 . SINGLE PULSE Roua=See note 1b Ta= 25C w nN 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 20. Single Pulse Maximum Power Dissipation. Poa (Q=r() * Baa Raa = See Note 1b 7 | bat tet ea" ty Ty-T, =P *R yall) Duty Cycle, D=t ,/t 9 lis 100 1 10 300 Figure 21. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b. Transient thermal response will change depending an the circuit board design. 5-66 FDC6321C Rev At