DCB010
No.1895-1/3
Features
•Ideally suited for use in hybrid ICs because of very small-sized package.
•Fast switching speed.
•Small interterminal capacitance.
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Conditions Ratings Unit
Peak Reverse Voltage VRM 85 V
Reverse Voltage VR80 V
Peak Forward Current IFM 300 mA
IFM*450 mA
Average Rectified Current IO100 mA
IO*150 mA
Surge Current (1μs) IFSM 4A
IFSM*6A
Allowable Power Dissipation P 200 mW
Junction Temperature Tj 125 °C
Storage Temperature Tstg --55 to +125 °C
*
: Total value
Electrical Characteristics at Tc=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
VF1 IF=1mA 0.60 V
Forward Voltage VF2 IF=10mA 0.72 V
VF3 IF=100mA 1.20 V
Reverse Current IR1 VR=30V 0.1 μA
IR2 VR=80V 0.5 μA
Marking: W6 Continued on next page.
SANYO Semiconductors
DATA SHEET
Ordering number : EN1895C
41509DH MS IM TC-00001938 / N0106 / 12000 GI IM / 2279TA, TS
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customer
'
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device, the customer should always evaluate and test devices mounted in the customer
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DCB010 Silicon Epitaxial Planar Type (Cathode Common)
Very High-Speed Switching Diode