NJV4031NT1G - ON Semiconductor - Datasheet.Directory

August, 2013 − Rev. 4

1Publication Order Number:

NJT4031N/D

NJT4031N,

NJV4031NT1G,

NJV4031NT3G

Bipolar Power Transistors

NPN Silicon

Features

•Epoxy Meets UL 94, V−0 @ 0.125 in

•NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCB 40 Vdc

Emitter−Base Voltage VEB 6.0 Vdc

Base Current − Continuous IB1.0 Adc

Collector Current − Continuous IC3.0 Adc

Collector Current − Peak ICM 5.0 Adc

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Power Dissipation

Total PD @ TA = 25°C (Note 1)

Total P D @ TA = 25°C (Note 2)

PD2.0

0.80

Thermal Resistance, Junction−to−Case

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJA

155

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8” from case for 5 seconds

TL260 °C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to

+150

°C

1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.

2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.

SOT−223

CASE 318E

STYLE 1

MARKING

DIAGRAM

NPN TRANSISTOR

3.0 AMPERES

40 VOLTS, 2.0 WATTS

http://onsemi.com

4031NG

AYW

A = Assembly Location

Y Year

W = Work Week

4031N = Specific Device Code

G= Pb−Free Package

COLLECTOR 2,4

BASE

EMITTER 3

Device Package Shipping†

ORDERING INFORMATION

NJT4031NT1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

NJT4031NT3G SOT−223

(Pb−Free)

4000 / Tape &

Reel

NJV4031NT1G

NJV4031NT3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

123

NJT4031N, NJV4031NT1G, NJV4031NT3G

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0 Adc)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

(IE = 50 mAdc, IC = 0 Adc)

ÎÎÎÎ

VEBO

ÎÎÎÎ

6.0

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 40 Vdc)

ÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

100

ÎÎÎÎ

nAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 6.0 Vdc)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

100

ÎÎÎÎ

nAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 0.5 Adc, IB = 5.0 mAdc)

(IC = 1.0 Adc, IB = 10 mAdc)

(IC = 3.0 Adc, IB = 0.3 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

0.100

0.150

0.300

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.5 Adc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

(IC = 3.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

220

200

100

ÎÎÎÎ

−

ÎÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(VEB = 5.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

Cib

ÎÎÎÎ

−

ÎÎÎÎ

170

ÎÎÎÎ

−

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product (Note 4)

(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)

ÎÎÎÎ

−

ÎÎÎÎ

215

ÎÎÎÎ

−

ÎÎÎÎ

MHz

3. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

4. fT = |hFE| • ftest

Figure 1. Power Derating

TJ, TEMPERATURE (°C)

150100755025

0.5

1.0

1.5

2.0

2.5

PD, POWER DISSIPATION (W)

125

NJT4031N, NJV4031NT1G, NJV4031NT3G

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 2. DC Current Gain Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

100

200

300

400

500

600

1010.10.010.001

100

200

300

500

600

700

Figure 4. Collector−Emitter Saturation Voltage Figure 5. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.001

0.01

0.1

1010.10.010.001

0.01

0.1

Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage

IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A)

0.0010.0001

0.01

0.1

1010.10.010.001

0.2

0.4

0.6

1.2

hFE, DC CURRENT GAIN

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(on), EMITTER−BASE VOLTAGE (V)

VCE = 1 V

150°C

−55°C

25°C

VCE = 4 V

150°C

−55°C

25°C

400

IC/IB = 10 150°C

−55°C

25°C

IC/IB = 50 150°C

−55°C

25°C

0.01 0.1 1.0

0.8

1.0

VCE = 2 V

150°C

−55°C

25°C

IC = 3 A

0.1 A

1 A

0.5 A

2 A

NJT4031N, NJV4031NT1G, NJV4031NT3G

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.2

1.4

Figure 10. Input Capacitance Figure 11. Output Capacitance

VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)

6543210

100

150

200

250

300

350

706050403020100

100

Figure 12. Current−Gain Bandwidth Product Figure 13. Safe Operating Area

IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)

100.10.010.001

240

120

200

100101

0.01

0.1

VBE(sat), EMITTER−BASE

SATURATION VOLTAGE (V)

Cibo, INPUT CAPACITANCE (pF)

Cobo, OUTPUT CAPACITANCE (pF)

fTau , CURRENT BANDWIDTH

PRODUCT (MHz)

IC, COLLECTOR CURRENT (A)

0.4

0.6

0.8

1.0

1.2 IC/IB = 10

150°C

−55°C

25°C

IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.2

1.4

VBE(sat), EMITTER−BASE

SATURATION VOLTAGE (V)

0.4

0.6

0.8

1.0

1.2 IC/IB = 50

150°C

−55°C

25°C

TJ = 25°C

ftest = 1 MHz

TJ = 25°C

ftest = 1 MHz

160

TJ = 25°C

ftest = 1 MHz

VCE = 10 V

0.5 ms

10 ms

100 ms

1 ms

400

450

87 9080

NJT4031N, NJV4031NT1G, NJV4031NT3G

http://onsemi.com

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE N

123

0.08 (0003)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCH.

1.5

0.059 ǒmm

inchesǓ

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091

2.3

0.091

2.0

0.079

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

1.50 1.63 1.75 0.060

INCHES

A1 0.02 0.06 0.10 0.001

b0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c0.24 0.29 0.35 0.009

D6.30 6.50 6.70 0.249

E3.30 3.50 3.70 0.130

e2.20 2.30 2.40 0.087

0.85 0.94 1.05 0.033

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

NOM MAX

L1 1.50 1.75 2.00 0.060

6.70 7.00 7.30 0.264

0.069 0.078

0.276 0.287

− −

0°10°0°10°

L0.20 −−− −−− 0.008 −−− −−−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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Phone: 81−3−5817−1050

NJT4031N/D

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