Silicon NPN Transistors . com Pe ee Absolute Max. Ratings Typical Max (C80 - pase ype on Max. or *f; hep at (mA) Application struction (mW) + Fab VcRO Vero VERO Ic (or *hfe) Ref. (MHz) wy | wy | wy | oma) HA y LT.T. (Continued) Current Types (Continued) BFY50 PE 800 100 80 35 6 1A 30 at 150 0.05 60 2 BFY51 PE 800 110 60 30 6 1A 40 at 150 0.05 40>) High level amplifiers 2 BFY52 PE 800 120 40 20 6 IA 60 at 150 0.05 30! 2 2N2218 PE 800 250 60 30 5 800 40 at 150 0.01 50) 2 2N2218A PE 800 250 75 40 6 800 40 at 150 0.01 60 | High speed switehin 2 2N2219 PE 800 250 60 30 5 800 200 at 150 0.01 50 Si speed s S 3 2N2219A PE 800 250 15 40 6 800 200 at 150 0.01 60 2 2N3724 PE 800 250 50 30 6 1A 95 at 150 1.7 40 2 2N3725 PE 800 250 80 50 6 1A 95 at 150 1.7 60 ( Fast switehin 2 2N4046 PE 800 250 50 30 6 500 95 at 150 1.7 40 \ . ng 9 2N4047 PE 800 250 80 50 6 500 95 at 150 1.7 60. 2 BSY81 PE 900 100 40 18 5 1A 80 at 150 0.1 30 2 oNoooT } PE 900 100 80 35 7 1A 80at 150 0.01 60 2 en to8 at PE 900 110 120 64 +7 1A 80at 150 0.01 90) High level switching 2 BSY82 PE 900 120 40 18 5 1A 200at 150 0.1 30 2 BSY84 PE 900 120 80 35 7 1A 200 at 150 0.01 60 2 BSY86 PE 900 130 120 64 7 1A 200 at 150 0.01 90 2 BF257 PE 5w 90 160 160 5 100 25 at 30 0.05 100 2 BF258 PE 5W 90 250 250 5 100 25 at 30 0.05 200 2 BF259 PE 5w 90 300 300 5 100 25 at 30 0.05 250\ 4405 output stages 2 BF457 PE 10w 90 160 160 5 100 25 at 30 0.05 100 pur stag 65 BF458 PE 10w = 90 250 250 5 100 25 at 30 0.05 200 65 BF459 PE 10w = 90 300 300 5 100 25 at 30 0.05 250 65 JOSEPH LUCAS (ELECTRICAL) Ltd. Replacement Types DT1602 DJ 100 75 75 1 25 5i at 3 100 75 2 DT 1603 DJ 100 150 150 1 25 5i at 3 100 150 | Drivers for cold 2 DT 1612 DJ 100 75 75 1 25 20% at 3 100 75 \ cathode counters 2 DT 1613 DJ 100 - 150 150 1 25 20% at 3 100. =: 150 2 DT1510 DJ 800 1t 30 20 8 1A 25 at 300 4 30 2 DT1511 DJ 800 1t 60 40 8 1A 25 at 300 4 60 2 DT 1512 DJ 800 1t 100 70 8 1A 25 at 300 4 100 2 DT1520 DJ 800 at 30 20 8 1A 120 at 300 4 30 2 DT152i DJ 800 2t 60 40 8 1A s- 120 at 300 4 60 2 DT 1522 DJ 800 2t 100 70 8 1A 120 at 300 4 100 2 DT1110 DJ 1w 1.57 30 30 10 1A 45 at 300 2 30 2 DT1111 DJ 1Ww 1.57 60 60 10 1A 45 at 300 2 60 ) General purpose 2 DT 1112 DJ 1w 1.5T 100 100 10 1A 45 at 300 2 100 2 DT1120 DJ 1W 2.51 30 30 10 IA 60 at 300 2 30 2 DT1121 DJ iw 2.5t 60 60 10 1A 60 at 300 2 60 2 DT 1122 DJ 1W 2. 5t 100 100 10 1A 60 at 300 2 100 2 DT 1621 DJ 2W 2.5 60 40 8 1A 125 at 250 10 60 2 DT3200 DJ 15W 0.5 45 30 8 5A 30 at 3A 25 45 3 DT3201 DJ 15W 0.5 80 60 8 5A 30 at 3A 25 80 3 Current Types DT 1003 DJ 4w 1 200 200 5 300 24 at 200 - 9 DT1013 DJ 4w 1 200 =. 200 5 300 60 at 200 ~ 2 DT1311 DJ 5W 1.5 60 40 12 1.54 40at 200 2 DT1312 DJ 5W 1.5 100 60 12 1.5A 40 at 200 2 2N1479 DJ 5W 1.5 60 4012 1.54 40 at 200 _ General purpose 2 2N 1480 DJ 5W 1.5 100 55 12 1.5A 40 at 200 2 2N1481 DJ 5W 1.5 60 40 12 1.5A 67 at 200 ~ 2 2N1482 DJ 5W 1.5 100 55 12 1.5A 67 at 200 ~ 2 DT1321 DJ 5W 2.5 60 40 12 1.54 80 at 200 2 ContinuedSilicon NPN Transistors com be Typical | Absolute Max. Ratings Typical Man eee Type struction yy or ny 1 ME oe) Application pe I + fa > - . e. . (MHz) | OP | RP | EPL aaa " vA | NEWMAREET (Continued) Current Types (Continued) 2N 2220 ~ 00 ~ 60 30. 5 800 40 at 150 0.01 50 R.F. switching 2 2N2220A 500 - 75 40 6 800 40 at 150 0.01 60 2 2N2221 500 _ 60 30 5 800 80 at 150 0.01 50 es 2 2N2221A 500 - 7 40 6 800 80at 150 0.01 60 RF. amplifiers 2 2N2222 500 - 60 30 5 800 200at 150 0.01 50 2 2N2222A 500 ~ 15 40 6 800 200at 150 0.01 60 2 NKT10339 500 100 45 30 +5 500 100 at 100 0.01 10 A.F. drivers 2 NKT10439 500 100 45 30 5 500 100 at 100 0.01 10 2 NKT12329 500 200 30 20 4 500 80 at 10 0.01 10 \ RF hifi 2 NKT 12429 500 200 30 20 4 500 195 at 10 0.01 10 7 ampliiers 2 2N1613 800 ~ 75 - 7 - 65 at 1 0.01 60 2 2N1711 800 _ 75 - 7 125at1 0.01 60 A.F, switching 2 2N1893 800 _ 120 80 7 1A 80 at 150 0.01 90 2 2N2217 800 - 60 30.5 800 40 at 150 0.01 50 2 2N2217A 800 _ 15 40 6 800 40 at 150 0.01 60 2 2N2218 800 60 30. 5 ~-800 80 at 150 0.01 50 2 IN2218A 800 ~ 75 40 6 800 80 at 150 0.01 60 F iti 2 2N2219 800 ~ 60 30 5 800 200at 150 0.01 50) R-F.amplifiers 2 2N2219A 800 ~ 75 40 6 800 200 at 150 0.01 60 2 BFX84 800 50 100 60 6 1A 30f at 150 0.05 980 2 BFX85 800 50 100 60 6 1A 70t at 150 0.05 80 2 BFX86 800 50 40 35 6 1A = 70 at 150 0.05 30 A.F.driver 2 BFY51 800 50 60 30 6 1A 40% at 150 0.05 40 2 BFY52 800 50 40 20 6 1A 60 at 150 0.05 400 Ae cvitehi 2 BFY53 800 50 30 20 6 1A 30 at 150 _ H. Switening 2 BFY50 800 60 80 35 6 1A 30% at 150 0.05 60 2 2N2297 800 60 80 35.7 - 80 at 150 0.01 60 A.F.drivers 2 BSX60 800 250 70 30, 14 60 at 500 _ \ RF. switehin 2 BSX61 800 250 70 45 1A -30t at 500 _ switching 2 2N3053 1W ~ 60 40 5 700 150t at 150 0.25 30 A.F.amplifiers 2 2N3055 115W _ 100 60 5 15A 45 at 4A Power switching 1 BDY20 115W 1 100 60 5 15A 60 at 4A _ > Power amplifiers 1 Minimum value R.C.A. Current Types BDY71 H _ 0.8 - 55 _ 3A 137 - _ _ General purpose 1 QN718A P 1.8w 100 _ 32 ~ 900 80 at 150 0.01 60 2 2N720A P 1.8w 100 - 80 900 80 at 150 0.01 90 2 2N2895 _ 1.8w 100 65 900 80 at 150 0.002 60 se: 2 2N2896 1.8Ww 100 90 900 180 at 150 0.01 99 ( Audio amplifiers 2 2N2897 _ 1.8W 100 45 900 125 at 150 0.02 60 2 40084 1.8W 100 40 900 150 at 150 0.25 30 2 40310 H aw 0.8 35 _ 3A Oat1A 10 15 \ ; oes 1 40312 H 5W 0.8 _ 60 8A atid 10 15 f Audio amplifiers 1 2N697 PE 5W 120 40 900 80 at 150 1 30 2 2N699 PE 5W 120 80 900 80 at 150 2 60 2 2N1613 PE 5W 120 50 900 80 at 150 0.01 60 2 2N1711 PE 5W 120 50 900 200 at 150 0.01 60 2 2N1893 PE SW 120 _ 80 900 80 at 150 0.01 90 General purpose 2 2N2102 PE 5W 120 _ 65 900 80 at 150 0.002 60 2 2N2270 PE 145W 120 45 900 125 at 150 0.1 60 2 9N2405 PE 5W 120 90 900 130at150 0.01 90 2 2N3053 PE 5W 120 40 900 150 at 150 0.25 30 2 40309 PE 5W 120 - 18 900 210 at 50 0.25 15 2 40311 PE 5W 120 30 900 210at 50 0.25 15 2 40314 PE 5W 120 40 900 210at 50 0.25 15( pi. 2 40315 PE 5Ww 120 35 900 210 at 50 0.25 15 2 40317 PE 5W 120 40 900 120 at 10 0.25 15 2 40320 PE 5W 120 40 900 120 at 10 0.25 15 2 ContinuedSilicon NPN Transistors Typical Max ICBO >. Absolute Max. Ratings Typical at VCB Type Con | he on By, hyp: at (mA) Application Base struction (nw) + fab VcRo VeKo VERO Ic (or *hye) Ref. (MHz) (V) (Vv) Wy) | (ma HA y TEXAS (Continued) Current Types (Continued) 2N2222A PE 500 300 7 40 #6. 800 200 at 150 0.01 60 General purpose 2 2N3303 PE 600 - 25 12 4 1A 75 at 300 > _ Fast switching 2 2N699 DDP 600 30 120 +80 5 80 at 150 2 60 2 2N1420 DDP 600 30 60 30 5 1A -. 200 at 150 1 30 \ Amps./osc, 9 2N696 P 600 40 60 40 5 500 20i at 150 _ \ . ; 2 2N697 p 600 50 60 40 5 500 40 at 150 f Medium power 2 TIS90 PE 625 _ 40 40 5 400 160 at 50 0.1 20 24 TIS9OM PE 625 40 40 5 400 160 at 50 0.1 20 | 24 TIS92 PE 625 _ 40 40 5 400 160 at 50 0.1 20 General purpose 24 TIS92M PE 625 _ 40 40 5. 400 160 at 50 0.1 20 } 24 BSS34 _ 625 90 100 80 200 50% at 10 24 BSS35 ~ 625 90 120 100 200 40% at 10 _ } Indicator tube driver 54 BFY50 PE 800 80 80 6 1A _ ~ 0,05 60) 2 BFY51 PE 800 _ 60 60 6 1A _ _ 0.05 40 General purpose 2 BFY52 PE 800 40 40 6 1A _ ~ 0.05 30) 2 2N3036 PE 800 _ 120 80 7 1.2A 100 at 150 0.01. 60 2 2N3418 PE 800 85 60 8 3A 40 at 1A 2 2N3419 PE 800 _ 125 80 8 3A 40 at 1A _ _ General purpose 2 2N3420 PE 800 ~ 85 60 88 3A 80 at 1A _ 2 2N3421 PE 800 - 125 80 8 3A 80 at 1A 2 2N3724 PE 800 _ 50 30 6 500 35t at 500 1.7 ~~ 40 - ae 2 2N3725 PE 800 _ 80 50 6 500 35t at 500 1.7 ~~ 40 } High speed switching == 5 2N1714 tDM 800 16 60 6 750 40 at 200 _ 2 2N1715 tDM 800 16 ~ 100 6 750 40 at 200 _ 2 2N1716 tDM 800 16 60 6 750 80 at 200 _ 2 2N1717 tDM 800 16 100 6 750 80 at 200 _ -~\ oe 2 2N1718 tDM 800 16 60 6 750 40 at 200 _ : 16 2N1719 tDM 800 16 100 6 750 40 at 200 16 2N1720 tDM 800 16 _ 60 6 750 80 at 200 _ _ 16 2N1721 tDM 800 16 100 6 750 80 at 200 16 2N698 P 800 40 120 80 7 600 20% at 150 ~ - Medium power 2 2N1507 DDP 800 50 60 ~-30 5 1A 1004 at 150 _ 2 2N1889 DDP 800 50 100 60 ~=67~SO 00 401 at 150 _ 2 2N1893 DDP 800 50 120 80 7 800 40% at 150 _ 2 2N2192 PE 800 50 60 40 5 1A: 100 at 150 ~ 2 2N2192A PE 800 50 60 40 5 1A 1004 at 150 _ 2 2N2193 PE 800 50 80 50 8 1A 40t at 150 _ _ 2 2N2193A PE 800 50 80 50St* 1A 40% at 150 _ ) Medium power 2 2N2194 PE 800 50 60 40 5 1A 20% at 150 _ 2 2N2194A PE 800 50 60 40 5 1A 20t at 150 _ - 2 2N2243 PE 800 50 1200 80 7 1A 20t at 150 _ 2 2N2243A PE 800 50 120 80 #7 1A 40% at 150 2 2N3036 PE 800 50 120 80 7 1.2A 50% at 150 _ _ 2 2N1613 DDP 800 60 75 50 7 500 40t at 150 - | 2 2N1890 DDP 800 60 100 60 #7 500 100 at 150 _ | Medium power 2 QN1711 DDP 800 60 7% 50 #7 1A: 100F at 150 $ 2 BFR39 _ 800 100 90 80 1A 30t at 150 =| 24 BFR40 _ 800 100 70 60 _ 1A 407 at 150 _ _ General purpose 24 BFR41 800 100 60 50 1A 60t at 150 $3 24 BF257 PE 800 110 160 160 5 100 251 at 30 0.05 100 | 2 BF258 PE 800 110 250 250 5 100 25t at 30 0.05 200} Video amplifiers 2 BF259 PE 800 110 300 300 5 100 25 at 30 0.05 250 J 2 BFR86 800 130 120 120 400 20% at 30 _ _ 24 BFR87 _ 800 130 160 160 400 201 at 30 _ _ 24 BFR88 _ 800 130 250 250 400 20% at 30 _ =) Video output 24 BFR89 - 800 130 300 300 400 201 at 30 _ 24 2N2217 PE 800 250 60 30 5. 800 20t at 150 _ _ 2 2N2218 PE 800 250 60 30 5 800 40t at 150 ~ _ 2 QN2218A PE 800 250 75 46=6 40.~SsBS*S'COD 80 at 150 0.01 60 HF. 2 2N2219 PE 800 250 60 30 5. 800 100% at 150 _ 2 2N2219A PE 800 250 7 40 6. 800 200 at 150 0.01 60 2 Continued