BAT42W, BAT43W
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Feb-18 1Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
These diodes feature very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
For general purpose applications
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
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Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT
CONFIGURATION TYPE MARKING REMARKS
BAT42W BAT42W-E3-08 or BAT42W-E3-18 Single L2
Tape and reel
BAT42W-HE3-08 or BAT42W-HE3-18
BAT43W BAT43W-E3-08 or BAT43W-E3-18 Single L3
BAT43W-HE3-08 or BAT43W-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current (1) IF200 mA
Repetitive peak forward current (1) tp < 1 s, < 0.5 IFRM 500 mA
Surge forward current (1) tp < 10 ms IFSM 4A
Power dissipation (1) Tamb = 65 °C Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 300 K/W
Junction temperature Tj125 °C
Operating temperature range Top -55 to +125 °C
Storage temperature range Tstg -55 to +150 °C
BAT42W, BAT43W
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Feb-18 2Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test; tp 300 μs, tp/T < 0.02
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Forward Characteristics
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Typical Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V
Leakage current (1) VR = 25 V IR0.5 μA
VR = 25 V, Tj = 100 °C IR100 μA
Forward voltage (1)
IF = 200 mA VF1000 mV
IF = 10 mA BAT42W VF400 mV
IF = 50 mA BAT42W VF650 mV
IF = 2 mA BAT43W VF260 330 mV
IF = 15 mA BAT43W VF450 mV
Diode capacitance VR = 1 V, f = 1 MHz CD7pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 trr 5ns
200
18442 Tamb - Ambient Temperature (°C)
250
200
150
100
50
50 100 1500
0
Ptot - Power Dissipation (mW)
18443
120010008006004002000
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
VF- Instantaneous Forward Voltage (mV)
25 °C
125 °C - 40 °C
1000
100
10
1
0.1
0.01
18444
0 1020304050
V
R
- Reverse Voltage (V)
125 °C
100 °C
75 °C
50 °C
25 °C
I - Reverse Leackage Current (µA)
R
18445
14
12
10
8
6
4
2
0
0102030
VR- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
51525
BAT42W, BAT43W
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Feb-18 3Document Number: 85661
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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