BAT42W-E3-08 - Vishay Semiconductors

BAT42W, BAT43W

www.vishay.com Vishay Semiconductors

Rev. 1.9, 23-Feb-18 1Document Number: 85661

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Schottky Diode

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Case: SOD-123

Weight: approx. 10.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• These diodes feature very low turn-on voltage

and fast switching. These devices are protected

by a PN junction guard ring against excessive

voltage, such as electrostatic discharges

• For general purpose applications

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912



Note

(1) Valid provided that electrodes are kept at ambient temperature

Note

(1) Valid provided that electrodes are kept at ambient temperature

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Available

Models

PARTS TABLE

PART ORDERING CODE CIRCUIT

CONFIGURATION TYPE MARKING REMARKS

BAT42W BAT42W-E3-08 or BAT42W-E3-18 Single L2

Tape and reel

BAT42W-HE3-08 or BAT42W-HE3-18

BAT43W BAT43W-E3-08 or BAT43W-E3-18 Single L3

BAT43W-HE3-08 or BAT43W-HE3-18

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Repetitive peak reverse voltage VRRM 30 V

Forward continuous current (1) IF200 mA

Repetitive peak forward current (1) tp < 1 s,  < 0.5 IFRM 500 mA

Surge forward current (1) tp < 10 ms IFSM 4A

Power dissipation (1) Tamb = 65 °C Ptot 200 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 300 K/W

Junction temperature Tj125 °C

Operating temperature range Top -55 to +125 °C

Storage temperature range Tstg -55 to +150 °C

BAT42W, BAT43W

www.vishay.com Vishay Semiconductors

Rev. 1.9, 23-Feb-18 2Document Number: 85661

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test; tp  300 μs, tp/T < 0.02



TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 2 - Typical Forward Characteristics

Fig. 3 - Typical Reverse Characteristics

Fig. 4 - Typical Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Reverse breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V

Leakage current (1) VR = 25 V IR0.5 μA

VR = 25 V, Tj = 100 °C IR100 μA

Forward voltage (1)

IF = 200 mA VF1000 mV

IF = 10 mA BAT42W VF400 mV

IF = 50 mA BAT42W VF650 mV

IF = 2 mA BAT43W VF260 330 mV

IF = 15 mA BAT43W VF450 mV

Diode capacitance VR = 1 V, f = 1 MHz CD7pF

Reverse recovery time IF = 10 mA, IR = 10 mA,

iR = 1 mA, RL = 100 trr 5ns

200

18442 Tamb - Ambient Temperature (°C)

250

200

150

100

50 100 1500

Ptot - Power Dissipation (mW)

18443

120010008006004002000

I- Forward Current (mA)

1000

100

0.1

0.01

VF- Instantaneous Forward Voltage (mV)

25 °C

125 °C - 40 °C

1000

100

0.1

0.01

18444

0 1020304050

- Reverse Voltage (V)

125 °C

100 °C

75 °C

50 °C

25 °C

I - Reverse Leackage Current (µA)

18445

0102030

VR- Reverse Voltage (V)

C - Diode Capacitance (pF)

51525

BAT42W, BAT43W

www.vishay.com Vishay Semiconductors

Rev. 1.9, 23-Feb-18 3Document Number: 85661

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE DIMENSIONS in millimeters (inches): SOD-123

0.1 (0.004) max.

2.85 (0.112)

2.55 (0.100)

3.85 (0.152)

3.55 (0.140)

1.7 (0.067)

1.40 (0.055)

Mounting Pad Layout

2.5 (0.098)

0.85 (0.033) 0.85 (0.033)

0.85 (0.033)

Cathode bar

0.65 (0.026)

0.45 (0.018)

0.10 (0.004)

1 (0.039)

0.15 (0.006)

1.35 (0.053)

0.2 (0.008)

0° to 8°

0.45 (0.018)

0.25 (0.010)

0.5 (0.020) ref.

Rev. 4 - Date: 24. Sep. 2009

Document no.: S8-V-3910.01-001 (4)

17432

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www.vishay.com Vishay

Revision: 08-Feb-17 1Document Number: 91000

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