HN58X2402/HN58X2404/HN58X2408
HN58X2416/HN58X2432/HN58X2464
Two-wire serial interface
2k EEPROM (256-word × 8-bit)
4k EEPROM (512-word × 8-bit)
8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit)
32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit)
ADE-203-882B (Z)
Rev. 1.0
Jan. 25, 1999
Description
HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Features
• Single supply: 1.8 V to 5.5 V
• Two-wire serial interface (I2CTM serial bus*1)
• Clock frequency: 400 kHz
• Power dissipation:
Standby: 3 µA(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V )/15ms (1.8 V to 2.7 V )
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
2
Features (cont.)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin and SOP-8pin (Die shipment is also available)
Note: 1. I2C is a trademark of Philips Corporation.
Ordering Information
Type No. Internal organization Operating voltageFrequency Package
HN58X2402FP 2k bit (256 × 8-bit) 1.8 V to 5.5 V 400 kHz 150 mil 8-pin plastic SOP (FP-8DB)
HN58X2404FP 4k bit (512 × 8-bit)
HN58X2408FP 8k bit (1024 × 8-bit)
HN58X2416FP 16k bit (2048 × 8-bit)
HN58X2432FP 32k bit (4096 × 8-bit)
HN58X2464FP 64k bit (8192 × 8-bit)
HN58X2402T 2k bit (256 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic TSSOP (TTP-8D)
HN58X2404T 4k bit (512 × 8-bit)
HN58X2408T 8k bit (1024 × 8-bit)
HN58X2416T 16k bit (2048 × 8-bit)
HN58X2432T 32k bit (4096 × 8-bit)
HN58X2464T 64k bit (8192 × 8-bit)
Note: Industrial versions (Temperature range: –20 to +85˚C, –40 to +85˚C) are also available.
Specifications of the industrial versions are identical with the specifications of the 0 to +70˚C version.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
3
Pin Arrangement
1
2
3
4
8
7
6
5
A0
A1
A2
VSS
VCC
WP
SCL
SDA
(Top view)
8-pin TSSOP
8-pin SOP
Pin Description
Pin name Function
A0 to A2 Device address
SCL Serial clock input
SDA Serial data input/output
WP Write protect
VCC Power supply
VSS Ground
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
4
Block Diagram
Control
logic
High voltage generator
Address generator
X decoderY decoder
Memory array
Y-serect & Sense amp.
Serial-parallel converter
VCC
VSS
WP
A0, A1, A2
SCL
SDA
Absolute Maximum Ratings
Parameter Symbol Value Unit
Supply voltage relative to VSS VCC –0.6 to +7.0 V
Input voltage relative to VSS Vin –0.5*2 to +7.0*3V
Operating temperature range*1Topr 0 to +70 ˚C
Storage temperature range Tstg –65 to +125 ˚C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): –3.0 V for pulse width ≤ 50 ns.
3. Should not exceed VCC + 1.0 V.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
5
DC Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply voltage VCC 1.8 — 5.5 V
VSS 000V
Input high voltage VIH VCC × 0.7 — VCC + 1.0 V
Input low voltage VIL –0.3*1—V
CC × 0.3 V
Operating temperature Topr 0 — 70 ˚C
Notes: 1. VIL (min): –1.0 V for pulse width ≤ 50 ns.
DC Characteristics (Ta = 0 to +70˚C, VCC = 1.8 V to 5.5 V)
Parameter Symbol Min Typ Max Unit Test conditions
Input leakage current ILI — — 2.0 µAV
CC = 5.5 V, Vin = 0 to 5.5 V
Output leakage current ILO — — 2.0 µAV
CC = 5.5 V, Vout = 0 to 5.5 V
Standby VCC current ISB — 1.0 3.0 µA Vin = VSS or VCC
Read VCC current ICC1 — — 1.0 mA VCC = 5.5 V, Read at 400 kHz
Write VCC current ICC2 — — 3.0 mA VCC = 5.5 V, Write at 400 kHz
Output low voltage VOL2 — — 0.4 V VCC = 4.5 to 5.5 V, IOL = 1.6 mA
VCC = 2.7 to 4.5 V, IOL = 0.8 mA
VCC = 1.8 to 2.7 V, IOL = 0.4 mA
VOL1 — — 0.2 V VCC = 1.8 to 2.7 V, IOL = 0.2 mA
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter Symbol Min Typ Max Unit Test
conditions
Input capacitance (A0 to A2, SCL, WP) Cin*1— — 6.0 pF Vin = 0 V
Output capacitance (SDA) CI/O*1— — 6.0 pF Vout = 0 V
Note: 1. This parameter is sampled and not 100% tested.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
6
AC Characteristics (Ta = 0 to +70˚C, VCC = 1.8 to 5.5 V)
Test Conditions
• Input pules levels:
VIL = 0.2 × VCC
VIH = 0.8 × VCC
• Input rise and fall time: ≤ 20 ns
• Input and output timing reference levels: 0.5 × VCC
• Output load: TTL Gate + 100 pF
Parameter Symbol Min Typ Max Unit Notes
Clock frequency fSCL — — 400 kHz
Clock pulse width low tLOW 1200 — — ns
Clock pulse width high tHIGH 600 — — ns
Noise suppression time tI— — 50 ns 1
Access time tAA 100 — 900 ns
Bus free time for next mode tBUF 1200 — — ns
Start hold time tHD.STA 600 — — ns
Start setup time tSU.STA 600 — — ns
Data in hold time tHD.DAT 0——ns
Data in setup time tSU.DAT 100 — — ns
Input rise time tR— — 300 ns 1
Input fall time tF— — 300 ns 1
Stop setup time tSU.STO 600 — — ns
Data out hold time tDH 50 — — ns
Write cycle time VCC = 2.7 V to 5.5 V tWC — — 10 ms 2
VCC = 1.8 V to 2.7 V tWC — — 15 ms 2
Notes: 1. This parameter is sampled and not 100% tested.
2. tWC is the time from a stop condition to the end of internally controlled write cycle.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
7
Timing Waveforms
Bus Timing
tF
1/fSCL
tHIGH
tSU.STA tHD.STA tHD.DAT tSU.DAT tSU.STO
tBUF
tDH
tAA
tLOW tR
SCL
SDA
(in)
SDA
(out)
Write Cycle Timing
SCL
SDA D0 in
Write data ACK
(Address (n))
tWC
(Internally controlled)
Stop condition Start condition
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
8
Pin Function
Serial Clock (SCL)
The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge clock
data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is 400
kHz.
Serial Input/Output data (SDA)
The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that
pin is open-drain driven structure. Use proper resistor value for your system by considering VOL, IOL and the
SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later, the
SDA transition needs to be completed during SCL low period.
Data Validity (SDA data change timing waveform)
SCL
SDA
Data
change Data
change
Note: High-to-low and low-to-high change of SDA should be done during SCL low periods.
Device address (A0, A1, A2)
Eight devices can be wired for one common data bus line as maximum. Device address pins are used to
distinguish each device and device address pins should be connected to VCC or V SS. When device address
code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one
device can be activated. As for 4k to 16k EEPROM, whole or some device address pins don't need to be
fixed since device address code provided from the SDA pin is used as memory address signal.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
9
Pin Connections for A0 to A2
Pin connection
Memory size Max connect
number A2 A1 A0 Notes
2k bit 8 VCC/VSS*1VCC/VSS VCC/VSS
4k bit 4 VCC/VSS VCC/VSS ×*2Use A0 for memory address a8
8k bit 2 VCC/VSS ××Use A0, A1 for memory address a8 and a9
16k bit 1 ×××Use A0, A1, A2 for memory address a8, a9 and
a10
32k bit 8 VCC/VSS VCC/VSS VCC/VSS
64k bit 8 VCC/VSS VCC/VSS VCC/VSS
Notes: 1. “VCC/VSS” means that device address pin should be connected to VCC or VSS.
2. × = Don’t care (Open is also approval.)
Write Protect (WP)
When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in
the following table. When the WP is low, write operation for all memory arrays are allowed. The read
operation is always activated irrespective of the WP pin status. WP should be fixed high or low during
operations since WP does not provide a latch function.
Write Protect Area
Write protect area
WP pin status 2k bit 4k bit 8k bit 16k bit 32k bit 64k bit
VIH Upper 1/2
(1k bit) Upper 1/2
(2k bit) Upper 1/2
(4k bit) Upper 1/2
(8k bit) Upper 1/4
(8k bit) Upper 1/4
(16k bit)
VIL Normal read/write operation
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
10
Functional Description
Start Condition
A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation.
(See start condition and stop condition)
Stop Condition
A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts
after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the
write data inputs and place the device in a internally-timed write cycle to the memories. After the
internally-timed write cycle which is specified as tWC, the device enters a standby mode. (See write cycle
timing)
Start Condition and Stop Condition
SCL
SDA
(in)
Stop conditionStart condition
Acknowledge
All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero
to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter
keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation,
EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM
sends a zero to acknowledge after receiving the device address word. After sending read data, the
EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge,
it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment) and
a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM
receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending
read data.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
11
Acknowledge Timing Waveform
SCL
SDA IN
SDA OUT
12 89
Acknowledge
out
Device Addressing
The EEPROM device requires an 8-bit device address word following a start condition to enable the chip
for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address
code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to
distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by
the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device out of
all devices which are connected to the bus. This means that the device is selected if the inputted 3-bit
device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 4kbit, 8kbit and
16kbit EEPROMs, whole or some bits of their device address code may be used as the memory address
bits. For example, A0 is used as a8 of memory address for the 4kbit, A0 and A1 are used as a8 and a9 for
the 8kbit. The 16kbit doesn't use the device address code instead all 3 bits are used as the memory address
bits a8, a9 and a10. The eighth bit of the device address word is the read/write(R/W) bit. A write operation
is initiated if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device
address word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge.
The EEPROM turns to a stand-by state if the device code is not “1010” or device address code doesn’t
coincide with status of the correspond hard-wired device address pins A0 to A2.
Device Address Word
Device address word (8-bit)
Device code (fixed) Device address code*1R/W code*2
2k, 32k, 64k 1010A2 A1 A0 R/W
4k 1010A2 A1 a8 R/W
8k 1010A2 a9 a8 R/W
16k 1010a10 a9 a8 R/W
Notes: 1. A2 to A0 are device address and a10 to a8 are memory address.
2. R/W=“1” is read and R/W = “0” is write.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
12
Write Operations
Byte Write:
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends
acknowledgment "0" at the ninth clock cycle. After these, the 2kbit to 16kbit EEPROMs receive 8-bit
memory address word, on the other hand the 32kbit and 64kbit EEPROMs receive 2 sequence 8-bit
memory address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0"
and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs
acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed
write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM
returns to a standby mode after completion of the write cycle.
Byte Write Operation
2k to 16k
Device
address Memory
address (n) Write data (n)
Device
address 1st Memory
address (n) 2nd Memory
address (n) Write data (n)
Start Stop
32k to 64k
1010
1010
W
W
a7
a6
a5
a4
a3
a2
a1
a0
a12
a11
a10
a9
a8
a7
a6
a5
a4
a3
a2
a1
a0
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
Stop
Start
ACK ACK ACK
ACK ACK
R/W
ACK
R/W
*1
*1
*1
*2
Notes: 1. Don‘t care bits for 32k and 64k.
2. Don‘t care bit for 32k.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
13
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for inputting
the more write data. The page write is initiated by a start condition, device address word, memory
address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the page write
operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition. The a0 to
a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM can
continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the
page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data
will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Page Write Operation
Device
address Memory
address (n) Write data (n+m)Write data (n)
2k to
16k 1010 W
a7
a6
a5
a4
a3
a2
a1
a0
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
Stop
Start ACK ACK
ACK
R/W ACK
Notes: 1. Don‘t care bits for 32k and 64k.
2. Don‘t care bit for 32k.
Device
address 1st Memory
address (n) 2nd Memory
address (n) Write data (n+m)Write data (n)
32k to
64k 1010 W
a12
a11
a10
a9
a8
a7
a6
a5
a4
a3
a2
a1
a0
D7
D6
D5
D4
D3
D2
D1
D0
D5
D4
D3
D2
D1
D0
Stop
Start ACK ACK ACK ACK
ACK
R/W
*1
*1
*1
*2
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
14
Acknowledge Polling:
Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not.
This features is initiated by the stop condition after inputting write data. This requires the 8-bit device
address word following the start condition during a internally-timed write cycle. Acknowledge polling will
operate R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM is in a
internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has
completed. See Write Cycle Polling using ACK.
Write Cycle Polling using ACK
Send
write command
Send
stop condition
to initiate write cycle
Send
start condition
Send
device address word
with R/W = 0
Send
memory address Send
start condition
Send
stop condition
Send
stop condition
Proceed random address
read operation
Proceed write operation
Next operation is
addressing the memory
Yes
Yes
No
No
ACK
returned
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
15
Read Operation
There are three read operations: current address read, random read, and sequential read. Read operations are
initiated the same way as write operations with the exception of R/W = “1”.
Current Address Read:
The internal address counter maintains the last address accessed during the last read or write operation,
with incremented by one. Current address read accesses the address kept by the internal address counter.
After receiving a start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit
current address data from the most significant bit following acknowledgment “0” If the EEPROM receives
acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops the read
operation and is turned to a standby state. In case the EEPROM have accessed the last address of the last
page at previous read operation, the current address will roll over and returns to zero address. In case the
EEPROM have accessed the last address of the page at previous write operation, the current address will
roll over within page addressing and returns to the first address in the same page. The current address is
valid while power is on. The current address after power on will be indefinite. The random read operation
described below is necessary to define the memory address.
Current Address Read Operation
2k to 64k
Device
address Read data (n+1)
Start Stop
1010 R
D7
D6
D5
D4
D3
D2
D1
D0
ACK No ACK
R/W
*1
*2
*3
Notes: 1. Don‘t care bit for 16k.
2. Don‘t care bits for 8k and 16k.
3. Don‘t care bits for 4k, 8k and 16k.
Random Read:
This is a read operation with defined read address. A random read requires a dummy write to set read
address. The EEPROM receives a start condition, device address word(R/W=0) and memory address (8-bit
for 2kbit to 16kbit EEPROMs, 2 × 8-bit for 32kbit and 64kbit EEPROMs) sequentially. The EEPROM
outputs acknowledgment “0” after receiving memory address then enters a current address read with
receiving a start condition. The EEPROM outputs the read data of the address which was defined in the
dummy write operation. After receiving acknowledgment “1”(no acknowledgment) and a following stop
condition, the EEPROM stops the random read operation and returns to a standby state.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
16
Random Read Operation
Device
address Device
address
Memory
address (n) Read data (n)
2k to
16k 1010 1010
@@@
@@@
###
WR
a7
a6
a5
a4
a3
a2
a1
a0
D5
D6
D7
D4
D3
D2
D1
D0
Start Start
ACK
ACK
R/W ACK
R/W
Notes: 1. Don‘t care bits for 32k and 64k.
2. Don‘t care bit for 32k.
3. 2nd device address code (#) should be same as 1st (@).
Device
address Device
address
1st Memory
address (n) 2nd Memory
address (n) Read data (n)
32k to
64k 1010 ###
1010 RW
a12
a11
a10
a9
a8
a7
a6
a5
a4
a3
a2
a1
a0
D7
D6
D5
D4
D3
D2
D1
D0
Stop
Start Start
ACK ACK No ACK
Stop
No ACK
ACK
R/W ACK
R/W
*1
*1
*1
*2
Dummy write
Dummy write Currect address read
Currect address read
Sequential Read:
Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives
acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are
coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The
address will roll over and returns address zero if it reaches the last address of the last page. The sequential
read can be continued after roll over. The sequential read is terminated if the EEPROM receives
acknowledgment “1” (no acknowledgment) and a following stop condition.
Sequential Read Operation
Device
address Read data (n+m)Read data (n) Read data (n+1) Read data (n+2)
2k to
64k 1010 R
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
Stop
Start ACK ACK No ACK
ACK
R/W ACK
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
17
Notes
Data protection at VCC On/Off
When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM have a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
• SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition
during VCC on/off may cause the trigger for the unintentional programming.
• VCC should be turned off after the EEPROM is placed in a standby state.
• VCC should be turned on from the ground level(VSS) in order for the EEPROM not to enter the
unintentional programming mode.
• VCC turn on speed should be longer than 10 us.
Write/Erase Endurance and Data retention Time
The endurance is 10 5 cycles in case of page programming and 104 cycles in case of byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed
less than 104 cycles.
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
18
Package Dimensions
HN58X2402FP/HN58X2404FP/HN58X2408FP/HN58X2416FP/HN58X2432FP/HN58X2464FP
(FP-8DB)
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
FP-8DB
—
—
0.08 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
0° – 8°
1.27
85
14
0.10
0.25 M
1.73 Max
3.90
*0.22
4.89
0.14+ 0.114
– 0.038
0.69 Max 6.02 ± 0.18
+ 0.034
– 0.017
0.60+ 0.289
– 0.194
1.06
0.40 ± 0.06
0.20 ± 0.03
5.15 Max
*0.42+0.063
–0.064
Preliminary
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
19
Package Dimensions (cont.)
HN58X2402T/HN58X2404T/HN58X2408T/HN58X2416T/HN58X2432T/HN58X2464T (TTP-8D)
0.50 ± 0.10
0° – 8°
*0.17 ± 0.05
6.40
0.10
1.10 Max
0.13 M
0.65
14
85
4.40
3.00
3.20 Max
0.675 Max
*0.22+0.08
–0.07
0.07+0.03
–0.04
+0.10
–0.20
0.20 ± 0.06
0.15 ± 0.04
1.00
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TTP-8D
—
—
0.034 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
Preliminary
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
20
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Europe GmbH
Electronic components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
2000 Sierra Point Parkway
Brisbane, CA 94005-1897
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
For further information write to:
HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464
21
Revision Record
Rev. Date Contents of Modification Drawn by Approved by
0.0 Feb. 5, 1998 Initial issue M. Terasawa T. Muto
0.1 May. 22, 1998 Change of description for Acknowledge Polling
Addition of flow for Write Cycle Polling using ACK
Absolute Maximum Ratings
Tstg: –55 to +125˚C to –65 to +125˚C
AC Characteristics
Addition of tHD.DAT (VCC = 1.8 V to 3.0 V):
20/—/— ns
Addition of tHD.DAT (VCC = 3.0 V to 5.5 V):
10/—/— ns
Package Dimensions
Change of FP-8DB and TTP-8D
T. Okada T. Muto
1.0 Jan. 25, 1999 Deletion of Preliminary
Change test conditions of tHD.DAT
VCC = 3.0 V to 5.5 V/1.8 V to 3.0 V to
VCC = 1.8 V to 5.5 V
tHD.DAT min (3.0 V to 5.5 V/1.8 V to 3.0 V):
10/20 ns to 0 ns
Package Dimensions
Change of FP-8DB and TTP-8D
