1Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short
circuited)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 100 V
IF(RMS) Forward rms current 60 A
IF(AV) Average forward current, δ = 0.5 square wave 40 A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 440 A
Tstg Storage temperature range -65 to +175 °C
TjMaximum operating junction temperature(1) +175 °C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol Parameter Max. value Unit
Rth(j-c) Junction to case TO-220AB, D2PAK 0.8
°C/W
TO-220FPAB 3.3
Table 3. Static electrical characteristics (anode terminals short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
- 190 µA
Tj = 125 °C - 12 24
mA
Tj = 125 °C VR = 70 V - 6 12
VF(2) Forward voltage drop
Tj = 25 °C
IF = 4 A
- 0.380 0.430
V
Tj = 125 °C - 0.325 0.375
Tj = 25 °C
IF = 10 A
- 0.465 0.525
Tj = 125 °C - 0.455 0.510
Tj = 25 °C
IF = 20 A
- 0.600 0.675
Tj = 125 °C - 0.550 0.600
Tj = 125 °C IF = 40 A - 0.645 0.705
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.420 x IF(AV) + 0.009 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
FERD40H100S
Characteristics
DS11576 - Rev 2 page 2/14