ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V Max RDS(ON) 1 @ VGS= -10V 1.45 @ VGS= -6.0V Features Package SOT23 Max ID TA = +25C -0.7A -0.5A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Fast Switching Speed Low Input Capacitance Low Gate Charge Low Threshold Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Data Sheet (ZXMP10A13FQ) Applications Mechanical Data DC-DC Converters Power Management Functions Disconnect Switches Motor Control Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.009 grams (Approximate) SOT23 D S G D G Top View Pin Out Top View S Equivalent Circuit Ordering Information (Note 4) Part Number ZXMP10A13FTA ZXMP10A13FTC Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 7P1 ZXMP10A13F Document number: DS33596 Rev. 5 - 2 7P1 = Product Type Marking Code 1 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS -100 V Gate-Source Voltage VGS 20 V ID -0.7 -0.5 -0.6 A IDM -3.1 A Continuous Drain Current VGS = 10V TA = +70C Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 7) (Note 6) (Note 6) (Note 6) IS -1.1 A ISM -3.1 A Symbol Value 625 5 806 6.4 Unit mW mW/C mW mW/C Thermal Characteristics Characteristic Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor PD PD Thermal Resistance, Junction to Ambient (Note 5) RJA 200 C/W Thermal Resistance, Junction to Ambient (Note 6) RJA 155 C/W RJL 194 C/W TJ, TSTG -55 to +150 C Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP10A13F Document number: DS33596 Rev. 5 - 2 2 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Thermal Characteristics (Continued) 10 -ID Drain Current (A) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse T amb=25C 1 100s 10 100 -VDS Drain-Source Voltage (V) Max Power Dissipation (W) 0.7 RDS(on) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 Maximum Power (W) Thermal Resistance (C/W) T amb=25C D=0.5 100 Single Pulse D=0.2 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS33596 Rev. 5 - 2 100 120 140 160 Single Pulse T amb=25C Pulse Width (s) ZXMP10A13F 80 Derating Curve 150 50 60 Temperature (C) Safe Operating Area 200 40 Pulse Power Dissipation 3 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -100 V ID = -250A, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS = -100V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(TH) -2.0 -4.0 V ID = -250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage RDS(ON) Forward Transconductance (Notes 9 & 11) gFS 1.2 Diode Forward Voltage (Note 9) VSD -0.85 Reverse Recovery Time (Note 11) tRR Reverse Recovery Charge (Note 11) QRR Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) Total Gate Charge (Note 10) Static Drain-Source On-Resistance (Note 9) 1.0 1.45 VGS = -10V, ID = -0.6A VGS = -6.0V, ID = -0.5A S VDS = -15V, ID = -0.6A -0.95 V TJ = +25C, IS = -0.75A, VGS = 0V 29 ns 31 nC TJ = +25C, IF = -0.9A, di/dt = 100A/s 141 13.1 CRSS 10.8 tD(ON) 1.6 tR 2.1 tD(OFF) 5.9 tF 3.3 QG 1.8 Total Gate Charge (Note 10) QG 3.5 Gate-Source Charge (Note 10) QGS 0.6 Gate-Drain Charge (Note 10) QGD 1.6 DYNAMIC CHARACTERISTICS (Note 11) Notes: pF VDS = -50V, VGS = 0V f = 1.0MHz ns VDD = -50V, ID = -1.0A, RG 6.0 VGS = -10V nC VDS = -50V, VGS = -5.0V, ID = -0.6A nC VDS = -50V, VGS = -10V, ID = -0.6A 9. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMP10A13F Document number: DS33596 Rev. 5 - 2 4 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Typical Characteristics 10 10 10V 7V 5V 1 4.5V 4V 0.1 3.5V 0.01 1E-3 5V 4.5V 4V 0.1 3.5V 3V -VGS 1 10 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1 1 T A = 150C 2.2 T A = 125C 2.0 VGS = -10V 1.8 ID = - 0.6A Normalised RDS(on) and VGS(th) 0.9 0.8 (A) Current -ID Drain -I D, DRAIN CURRENT (A) 1 1E-3 0.1 VD S = 10V 0.7 T = 150C 0.6 T = 25C 0.5 0.1 0.4 TA = 85C 0.3 T A = 25C 0.2 -VDS = 10V 0.1 0.01 1 3 T A = -55C 2 4 3 4 5 6 57 -V-VGS, GATE-SOURCE Gate-SourceVOLTAGE Voltage(V) (V) 1.6 RDS(on) 1.4 1.2 VGS(th) 1.0 0.8 VGS = VDS 0.6 ID = -250uA 0.4 -50 8 0 Typical Transfer Characteristics Typical Transfer Characteristics 50 100 150 Tj Junction Temperature (C) GS Normalised Curves v Temperature 10 3.5V -VGS 100 T = 25C 4V 4.5V 5V 10 7V 10V 1 -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance 7V 0.01 -VGS 0 0 10V T = 150C -ID Drain Current (A) -ID Drain Current (A) T = 25C T = 150C 1 T = 25C 0.1 0.01 0.01 0.1 1 10 On-Resistance v Drain Current ZXMP10A13F Document number: DS33596 Rev. 5 - 2 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Typical Characteristics (Continued) C Capacitance (pF) f = 1MHz 150 CISS COSS 100 CRSS 50 0 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 VGS = 0V 200 ID = -0.6A 8 6 4 2 VDS = -50V 0 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMP10A13F Document number: DS33596 Rev. 5 - 2 6 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 - All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X ZXMP10A13F Document number: DS33596 Rev. 5 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 7 of 8 www.diodes.com June 2016 (c) Diodes Incorporated ZXMP10A13F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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