ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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June 2016
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ZXMP10A13F
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Max RDS(ON)
Package
-100V
1 @ VGS= -10V
SOT23
1.45 @ VGS= -6.0V
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Features
Fast Switching Speed
Low Input Capacitance
Low Gate Charge
Low Threshold
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Data Sheet (ZXMP10A13FQ)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.009 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
ZXMP10A13FTA
SOT23
3,000/Tape & Reel
ZXMP10A13FTC
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Equivalent Circuit
D
S
G
Top View
Pin Out
D
S
G
SOT23
7P1 = Product Type Marking Code
7P1
SOT23
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
VGS = 10V
(Note 6)
TA = +70°C (Note 6)
(Note 6)
ID
-0.7
-0.5
-0.6
A
Pulsed Drain Current (Note 7)
IDM
-3.1
A
Continuous Source Current (Body Diode) (Note 5)
IS
-1.1
A
Pulsed Source Current (Body Diode) (Note 7)
ISM
-3.1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
200
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
155
°C/W
Thermal Resistance, Junction to Leads (Note 8)
RθJL
194
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
Thermal Characteristics (Continued)
110 100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-ID Drain Current (A)
-VDS Drain-Source Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
50
100
150
200 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMP10A13F
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ZXMP10A13F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-100
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-1.0
µA
VDS = -100V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
-2.0
-4.0
V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS(ON)
1.0
VGS = -10V, ID = -0.6A
1.45
VGS = -6.0V, ID = -0.5A
Forward Transconductance (Notes 9 & 11)
gFS
1.2
S
VDS = -15V, ID = -0.6A
Diode Forward Voltage (Note 9)
VSD
-0.85
-0.95
V
TJ = +25°C, IS = -0.75A, VGS = 0V
Reverse Recovery Time (Note 11)
tRR
29
ns
TJ = +25°C, IF = -0.9A,
di/dt = 100A/µs
Reverse Recovery Charge (Note 11)
QRR
31
nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
CISS
141
pF
VDS = -50V, VGS = 0V
f = 1.0MHz
Output Capacitance
COSS
13.1
Reverse Transfer Capacitance
CRSS
10.8
Turn-On Delay Time (Note 10)
tD(ON)
1.6
ns
VDD = -50V, ID = -1.0A,
RG 6.0 VGS = -10V
Turn-On Rise Time (Note 10)
tR
2.1
Turn-Off Delay Time (Note 10)
tD(OFF)
5.9
Turn-Off Fall Time (Note 10)
tF
3.3
Total Gate Charge (Note 10)
QG
1.8
nC
VDS = -50V, VGS = -5.0V,
ID = -0.6A
Total Gate Charge (Note 10)
QG
3.5
nC
VDS = -50V, VGS = -10V,
ID = -0.6A
Gate-Source Charge (Note 10)
QGS
0.6
Gate-Drain Charge (Note 10)
QGD
1.6
Notes: 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
Typical Characteristics
0.1 1 10
1E-3
0.01
0.1
1
10
0.1 1 10
1E-3
0.01
0.1
1
10
3 4 5
0.01
0.1
1
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01 0.1 1 10
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
10V
5V
4.5V
-VGS
3.5V
7V
4V
Output Characteristics
T = 25°C
-VGS
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
4.5V
4V
3V
7V
10V
3.5V
Output Characteristics
T = 150°C
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
-VDS = 10V
T = 25°C
T = 150°C
-ID Drain Current (A)
-VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = -10V
ID = - 0.6A
VGS(th)
VGS = VDS
ID = -250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
4.5V
10V
4V
5V
7V
3.5V
On-Resistance v Drain Current
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance 
-ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 1 2 3 4 5 6 7 8
Typical Transfer Characteristics
-V , GATE-SOURCE VOLTAGE (V)
GS
-I , DRAIN CURRENT (A)
D
T = 12C
A
T = 15C
A
T = -55°C
A
T = 25°C
A
T = 85°C
A
V = 10V
DS
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
Typical Characteristics (Continued)
0.1 1 10 100
0
50
100
150
200
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
-VDS - Drain - Source Voltage (V) 0 1 2 3 4
0
2
4
6
8
10 ID = -0.6A
VDS = -50V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
X
Y
Y1 C
X1
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
ZXMP10A13F
Document number: DS33596 Rev. 5 - 2
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ZXMP10A13F
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