160 Vv BF 458 UBR)CEO ) 250 BF 459 UBR)CEO 2) 300 << Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage Te = 100 pA UBRJEBO 5 Vv Kollektor-Sattigungsspannung Collector saturation voltage Io = 30 mA, Ip =6mA UcEsat 1 Vv Kollektor-Basis-Gleichstromverhaltnis DC forward current transfer ratio Ucge = 10V, Ig = 30 mA Age) 25 Dynamische KenngroBen AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product Ugg = 10 V, Ig = 15 mA, f = 20 MHz ST 90 MHz Rickwirkungskapazitat Feedback capacitance Uce = 30V, Ip = 1 mA, f = 1 MHz Cure 4,2 pF Kollektor-Basis-Kapazitat Collector-base capacitance UcB = 80 V, f = 1 MHz CcosBo 5,5 pF Kollektor-Emitter-Kniespannung Collector-emitter knee voltage Iq = 40 mA, Re = 100 Q, Ro = 4kO, f = 0,5 MHz, 4 = 150C Ucekn) 20 Vv 'P ) B= 0,01, fp = 0,3 ms *) Kollektor-Emitter-Kniespannung Ucekn Spannung, bei der die Kurzschlu8-Vorwartssteilheit [fe | aut den 0,8-fachen Wert der KurzschiuB-Vorwartssteilheit bei Ung = 50 V abgesunken ist. Collector-emitter knee voltage UceKn Voltage at which the short circuit forward transfer admittance| Ve | is dropped to 80% of the short circuit transfer admittance at Ugg = 50 V. 269 BF 457 - BF 458 - BF 459 f BF 487 Ugg=100V U, = CEsat IcBo BF 458 Ucg =200V BF 459 Ucg=250V 1 300 mV tee = 5 famb = 25 C t F = 0,01 tp = 0,3 me 0,1 200 0, 100 0,001 o lamb > BE 800 mV 600 fee Ueg =10V CE A __ FE. HO hpe Ug = 40 mAd famb = 25 C Unp = 10V CE tamb = 25 C t - = 001 =O3mes tp 77 0,01 tp = 0,3 me 1 1 10 mA lor 270