2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N930J) * JANTX level (2N930JX) * JANTXV level (2N930JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/253 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 45 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts Collector Current, Continuous IC 30 mA Power Dissipation, TA = 25C Derate linearly above 25C PT 360 2.06 RJA 485 mW mW/C C/W TJ -65 to +200 C TSTG -65 to +200 C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. H Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N930 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 10 mA Typ Max Units Volts 45 Collector-Base Cutoff Current ICBO1 ICBO2 VCB = 60 Volts VCB = 45 Volts 10 10 Collector-Emitter Cutoff Current ICEO VCE = 5 Volts VCE = 45 Volts VCE = 45 Volts, TA = 150C VEB = 6 Volts VEB = 5 Volts 2 A nA nA 2 10 10 5 nA A A nA Collector-Emitter Cutoff Current Emitter-Base Cutoff Current ICES1 ICES2 IEBO1 IEBO2 On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol Base-Emitter Saturation Voltage VBEsat1 Test Conditions IC = 10 A, VCE = 5 Volts IC = 500 A, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C IC = 10 mA, IB = 0.5 mA Collector-Emitter Saturation Voltage VCEsat1 IC = 10 mA, IB = 0.5 mA hFE1 hFE2 hFE3 hFE4 DC Current Gain Min Typ 100 150 Max Units 300 600 20 0.6 1 Volts 1 Volts Max Units Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance COBO Noise Figure Short Circuit Input Impedance NF1 NF2 NF3 hie Test Conditions VCE = 5 Volts, IC = 500 A, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k, f = 100 Hz f = 1 kHz f = 10 kHz VCB = 5V, IC = 1mA, f = 1kHz Open Circuit Output Admittance hoe Open Circuit reverse Voltage Transfer Ratio hre Copyright 2002 Rev. H Symbol |hFE| hFE Min Typ 1.5 6 150 600 8 pF 5 3 3 dB 32 VCB = 5V, IC = 1mA, f = 1kHz 1 mho VCB = 5V, IC = 1mA, f = 1kHz 6x10-4 25 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2