SIGC25T120CS2 - Infineon Technologies AG

SIGC25T120CS2

Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for:

• IGBT Modules

FEATURES:

• 1200V NPT technology 175µm chip

• low turn-off losses

• short tail current

• positive temperature coefficient

• easy paralleling

Applications:

• drives, SMPS, resonant

applications

Chip Type VCE ICn Die Size Package Ordering Code

SIGC25T120CS2 1200V

15A 5.71 x 4.53 mm2 sawn on foil Q67050-A4197

MECHANICAL PARAMETER:

Raster size 5.71 x 4.53

Emitter pad size 2x (2.18 x 1.6)

Gate pad size 1.09 x 0.68

Area total / active 25.9 / 18.7

mm2

Thickness 175 µm

Wafer size 150 mm

Flat position 270 grd

Max.possible chips per wafer 555 pcs

Passivation frontside Photoimide

Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, <500µm

Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm

Recommended Storage Environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC25T120CS2

Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 2, 03.09.2003

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 1200 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 45 A

Gate emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -55 ... +150 °C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=1.5mA 1200

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=15A 2.7 3.2 3.7

Gate-emitter threshold voltage VGE(th) IC=0.6mA , VGE=VCE 4.5 5.5 6.5

Zero gate voltage collector current ICES VCE=1200V , VGE=0V 100 µA

Gate-emitter leakage current IGES VCE=0V , VGE=20V 120 nA

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss - 1000

Output capacitance Coss - 150

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz - 70

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter Symbol Conditions 1) min. typ. max. Unit

Turn-on delay time td(on) - tbd

Rise time tr - tbd

Turn-off delay time td(off) - tbd

Fall time tf

Tj=125°C

VCC=600V,

IC=15A,

VGE=-15/15V,

RG= 33Ω - tbd

1) values also influenced by parasitic L- and C- in measurement and package.

SIGC25T120CS2

Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 2, 03.09.2003

CHIP DRAWING:

SIGC25T120CS2

Edited by INFINEON Technologies AI PS DD HV3, L 7141-T, Edition 2, 03.09.2003

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet tbd

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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