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Not all devices/types available in every country. Please check with local NEC representative for
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MOS FIEL D EFFECT TRANSI STO R
2SK3572
SWITCHING
N-CHANNEL POWER MOS FET
D ATA SHEET
Document No. D16258EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
The mark ★
★★
★ shows major revised points.
DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current app lic atio ns such as
DC/DC converter with synchronous rectifier.
FEATURES
• 4.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
• Low gate charge
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)
• Built-in gate protection diode
• Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 20 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±80 A
Drain Current (pulse) Note ID(pulse) ±300 A
Total Power Dissipation (TA = 25°C) PT1 1.5 W
Total Power Dissipation (TC = 25°C) PT2 52 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10
µ
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3572 TO-220AB
2SK3572-S TO-262
2SK3572-ZK TO-263
2SK3572-Z TO-220SMD Note
Note TO-220SMD package is produced only in Japan.
★
★★
★
Data Sheet D16258EJ2V0DS
2
2SK3572
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
µ
A
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 40 A 15 S
Drain to Source On-st ate Resi stance RDS(on)1 VGS = 10 V, ID = 40 A 4.4 5.7 mΩ
RDS(on)2 VGS = 4.5 V, ID = 40 A 7.4 9.9 mΩ
Input Capacit ance Ciss VDS = 10 V 1700 pF
Output Capacit ance Coss VGS = 0 V 700 pF
Reverse Transf er Capacitance Crss f = 1 MHz 250 pF
Turn-on Delay Time td(on) VDD = 10 V, ID = 40 A 16 ns
Rise Time trVGS = 10 V 14 ns
Turn-off Del a y Tim e td(off) RG = 10 Ω50 ns
Fall Time tf12 ns
Total Gate Charge QGVDD = 16 V 32 nC
Gate to Source Charge QGS VGS = 10 V 7.1 nC
Gate to Drain Charge QGD ID = 80 A 7.7 nC
Body Diode Forward Voltage VF(S-D) IF = 80 A, VGS = 0 V 1.0 V
Reverse Recovery T ime trr IF = 80 A, VGS = 0 V 42 ns
Reverse Recovery Charge Qrr di/dt = 100 A/
µ
s34nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
µ
Duty Cycle ≤ 1%
τ
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton toff
td(on) t
r
td(off) tf
10% 10%
Data Sheet D16258EJ2V0DS 3
2SK3572
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA TOTAL POWER DISSIPATION vs.
CASE TEMPE RATURE
dT - Percentage of Rated Power - %
0
20
40
60
80
100
120
0 255075100125150175
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
0.1
1
10
100
1000
0.1 1 10 100
ID(pulse) PW = 10 µs
1 m s
10 m s
Power Dissipation Limited
RDS(on) Lim ited
TC = 25°C
Single pulse
100 µs
ID(DC)
DC
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resist ance - °C/W
0.01
0.1
1
10
100 Single pulse
PW - Pulse Width - s
10
µ
100
µ
1 m 10 m 100 m 1 10 100 1000
Rth(ch-A) = 83.3°C/W
Rth(ch-C) = 2.4°C/W
Data Sheet D16258EJ2V0DS
4
2SK3572
DRAIN CURRE NT vs .
DRAIN TO SOURCE VOLTAG E FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
0
50
100
150
200
250
300
350
0123456
VGS = 10 V
4.5 V
Pulsed
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0.01
0.1
1
10
100
1000
01234567
VDS = 10 V
Pulsed
Tch = 150°C
75°C
25°C
−55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRE NT
VGS(off) - Gate Cut-off Voltage - V
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature - °C
| yfs | - Forward Transfer Admittance - S
0.1
1
10
100
0.1 1 10 100
Tch = −55°C
2 5 ° C
7 5 ° C
1 5 0 ° C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN T O SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRE NT DRAIN T O SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
25
1 10 100 1000
10 V
VGS = 4.5 V
Pulsed
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
5
10
15
20
0 5 10 15 20
Pulsed
ID = 40 A
VGS - Gate to Source Voltage - V
Data Sheet D16258EJ2V0DS 5
2SK3572
DRAIN T O SOURCE ON-ST AT E RE SISTANCE vs.
CHANNEL TEMPE RATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
0
2
4
6
8
10
12
14
-50 0 50 100 150
VGS = 4.5 V
10 V
ID = 40 A
Pulsed
Tch - Channel Temperature - °C
Ciss, C oss, Crss - Capacitance - pF
10
100
1000
10000
0.1 1 10 100
VGS = 0 V
f = 1 MH z
C iss
C oss
C rss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(on), tr, td(off), t f - Sw itching Time - ns
1
10
100
1000
0.1 1 10 100
td(off)
td(on)
tf
tr
VDD = 10 V
VGS = 10 V
RG = 10 Ω
ID - Drain Current - A
VDS - Drain to Source Voltage - V
0
4
8
12
16
20
0 10203040
0
2
4
6
8
10
ID = 83 A
VDD = 16 V
10 V
VGS
VDS
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE REVE RSE RECOVERY TIME vs.
DRAIN CURRE NT
IF - Diode Forward Current - A
0.01
0.1
1
10
100
1000
00.511.5
VGS = 10 V 0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr - Reverse Recovery T ime - ns
1
10
100
1000
0.1 1 10 100
di/dt = 100 A/µs
VGS = 0 V
ID - Drain Current - A
Data Sheet D16258EJ2V0DS
6
2SK3572
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP. 3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12 3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.2
12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
4
3) TO-263 (MP-25ZK) 4) TO-220SMD (MP-25Z) Note
10.0±0.2
8.0 TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2 1.3±0.2
0.5±0.2
0 to 8
o
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.4
No plating 8.4 TYP.
0.025 to
0.25
0.25
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX. 1.3±0.2
0.5±0.2
0.5R TYP.
0.8R TYP.
0.75±0.3
2.8±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
★
★★
★
Data Sheet D16258EJ2V0DS 7
2SK3572
[MEMO]
2SK3572
M8E 00. 4
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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