DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3572 TO-220AB 2SK3572-S TO-262 2SK3572-ZK TO-263 2SK3572-Z TO-220SMD Note designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Note TO-220SMD package is produced only in Japan. * 4.5 V drive available * Low on-state resistance RDS(on)1 = 5.7 m MAX. (VGS = 10 V, ID = 40 A) * Low gate charge QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A) * Built-in gate protection diode * Surface mount device available ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) (TC = 25C) ID(DC) 80 A ID(pulse) 300 A Total Power Dissipation (TA = 25C) PT1 1.5 W Total Power Dissipation (TC = 25C) PT2 52 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Drain Current (pulse) Note Note PW 10 s, Duty Cycle 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16258EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark shows major revised points. (c) 2002 2SK3572 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 40 A 15 RDS(on)1 VGS = 10 V, ID = 40 A 4.4 5.7 m RDS(on)2 VGS = 4.5 V, ID = 40 A 7.4 9.9 m Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 1700 pF Output Capacitance Coss VGS = 0 V 700 pF Reverse Transfer Capacitance Crss f = 1 MHz 250 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 40 A 16 ns tr VGS = 10 V 14 ns td(off) RG = 10 50 ns 12 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 32 nC Gate to Source Charge QGS VGS = 10 V 7.1 nC Gate to Drain Charge QGD ID = 80 A 7.7 nC VF(S-D) IF = 80 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V 42 ns Reverse Recovery Charge Qrr di/dt = 100 A/s 34 nC Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% = 1 s Duty Cycle 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet D16258EJ2V0DS 2SK3572 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 60 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 50 40 30 20 10 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) PW = 10 s 100 100 s ID(DC) DC 10 1 ms Power Dissipation Lim ited 10 ms 1 T C = 25C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W ID - Drain Current - A R DS(on) Lim ited Rth(ch-A) = 83.3C/W Single pulse 10 Rth(ch-C) = 2.4C/W 1 0.1 0.01 10 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16258EJ2V0DS 3 2SK3572 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 350 Pulsed ID - Drain Current - A ID - Drain Current - A VDS = 10 V Pulsed VG S = 10 V 300 250 200 150 100 4.5 V 100 T ch = 150C 75C 25C -55C 10 1 0.1 50 0.01 0 1 2 3 4 5 3 4 5 6 7 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 -50 0 50 100 100 VDS = 10 V Pulsed 10 T ch = -55C 25C 75C 150C 1 0.1 150 0.1 1 10 100 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 25 Pulsed VGS = 4.5 V 20 15 10 10 V 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate Cut-off Voltage - V 2 VGS - Gate to Source Voltage - V 0 20 Pulsed 15 10 ID - Drain Current - A 4 1 VDS - Drain to Source Voltage - V 3 RDS(on) - Drain to Source On-state Resistance - m 0 6 | yfs | - Forward Transfer Admittance - S 0 ID = 40 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D16258EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 14 ID = 40 A Pulsed 12 Ciss, Coss, Crss - Capacitance - pF 10 VGS = 4.5 V 8 6 4 10 V 2 C iss 1000 C oss C rss 100 V GS = 0 V f = 1 MHz 0 10 -50 0 50 100 0.1 150 Tch - Channel Temperature - C SWITCHING CHARACTERISTICS 100 20 V DD = 10 V V GS = 10 V R G = 10 100 td(off) tf 10 td(on) tr VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 1 10 V DD = 16 V 10 V 16 8 V GS 12 6 8 4 4 2 V DS ID = 83 A 0 0.1 1 10 100 0 0 10 ID - Drain Current - A 1000 30 40 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns Pulsed 100 V GS = 10 V 10 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 1 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m 2SK3572 0V 1 0.1 100 10 di/dt = 100 A/s V GS = 0 V 1 0.01 0 0.5 1 1.5 0.1 1 10 100 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D16258EJ2V0DS 5 2SK3572 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 3.00.3 3.60.2 1.00.5 4.8 MAX. 10.6 MAX. 10 TYP. 1.30.2 4 4 2 1 3 0.50.2 0.750.1 2.54 TYP. 12.7 MIN. 1.30.2 12.7 MIN. 6.0 MAX. 1 2 3 1.30.2 2.80.2 1.30.2 8.50.2 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 0.50.2 0.750.3 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 4) TO-220SMD (MP-25Z) 1.350.3 3) TO-263 (MP-25ZK) 10.00.2 0.4 8.4 TYP. 4 4.450.2 Note 4.8 MAX. 10 TYP. 1.30.2 1.30.2 0.2 0 to 2.54 0.750.3 2.54 TYP. 8.50.2 3 P. . TY R TYP 5 . 0 R .8 2.54 TYP. 0 3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.80.2 2.5 2 0.50.2 8o 0.25 1 3.00.5 1.40.2 2 1.10.4 1 0.5 0.70.15 1.00.5 0.025 to 0.25 2.450.25 9.150.2 15.250.5 4 8.0 TYP. No plating 2.80.2 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark The diode connected between the gate and source of the transistor Body Diode Gate Gate Protection Diode 6 serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source Data Sheet D16258EJ2V0DS 2SK3572 [MEMO] Data Sheet D16258EJ2V0DS 7 2SK3572 * The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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