Sep. 2000
M63954P
VREG 1
8
2
7
3
6
4
5
16
9
15
10
14
11
13
12
VCO
CVCO
RVCO
AB
ABTH
LNTH
LN
CNT
OV
GND
LO
VCC
HVCC
HO
HGND
APPLICATIONS
The M63954P can be used for fixed or continuous lamp con-
trol of fluorescent lamp inverter.
FEATURES
¡FLOATING SUPPLY VOLTAGE .................................600V
¡OUTPUT CURRENT .............................................±500mA
¡HALF BRIDGE DRIVER
¡BUILT-IN OSCILLATOR
¡DIP_16 PACKAGE
¡BUILT-IN REGULATOR
DESCRIPTION
M63954P is high voltage integrated circuit designed for
electronic ballast, Power MOSFET and IGBT module driver
for half bridge applications.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
PACKAGE TYPE 16P4
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
HVCC
HO
HGND
LO
RVCOCVCO
VCO
VREG
LN
Dead
Time Level
Shift SQ
R
SQ
Q
R
SDELAY
Q
R
11
10
9
13
AB
5
ABTH
6
OV
15
4
0.773✽VREG
0.652✽VREG
3
2
1
8
LNTH
7
VCC
12
CNT
16
GND
14
+
–
+
–
+
–
+
–
+
–
+
–
DELAY
1/2VREG
+
–
DELAY
DELAY
VREG
VREG START
SQ
R
DELAY
UV
Sep. 2000
600
–0.5~+20
–0.5~+20
–0.5 ~ VCC+0.5
–0.5 ~ VCC+1.0
2
–0.5 ~ VCC+0.5
–0.5 ~ VCC+1.0
2
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
±500
±500
1.56
12.5
25
150
–20 ~ +80
–40 ~ +125
ABSOLUTE MAXIMUM RATINGS
HGND=GND
Ta = 25°C, On Board
Ta > 25°C, On Board
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side Fixed Supply Voltage
OV Input Voltage
AB Input Voltage
AB Input Current
ABTH Input Voltage
LN Input Voltage
LN Input Current
LNTH Input Voltage
VCO Input Voltage
High Side Output Current
Low Side Output Current
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
V
V
V
V
V
mA
V
V
mA
V
V
mA
mA
W
mW/°C
°C/W
°C
°C
°C
HGND
HVCC
VCC
VOV
VAB
IAB
VABTH
VLN
ILN
VLNTH
VVCO
IHO
ILO
Pt
K q
Rth(j-c)
Tj
Topr
Tstg
Symbol Parameter Conditions Ratings Unit
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
V
V
V
mA
mA
mA
mA
V
V
µs
V
µs
µA
kHz
kHz
V
µA
V
µA
µA
mV
13
13
6.9
—
—
2.0
2.0
9.0
5.5
14
3.4
30
–0.5
—
—
1.5
–2
5.5
–2
—
—
15
15
7.2
0.75
2.0
5.0
8
10
6.5
—
3.6
—
–0.08
—
—
—
–0.66
5.55
–0.66
—
—
17
17
7.5
1.0
4.0
8.0
12
11
7.5
100
3.8
150
—
250
125
VREG–1.5
—
5.6
—
0.5
500
High Side Floating Supply Voltage
Low Side Fixed Supply Voltage
Internal Supply Voltage
Standby Current
ON Suspension Oscillate Current
ON Oscillation Current (50Hz)
ON Oscillation Current (115kHz)
VCC UV Reset Voltage
VCC UV Trip Voltage
VCC Supply UV Filter Time
OV Protection Vth
OV Filter Time
OV Input Leak Current
VCO Frequency Set Up Limit
Output Frequency Set Up Limit
VCO Input Voltage Limit
VCO Input Leak Current
CVCO Input Voltage
CVCO Input Leak Current
RVCO Leak Current
RVCO Saturation Voltage
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
HVCC-HGND
VCC=15V, NO Load
VCC=15V, CNT=5V, OV=5V
VCC=15V, CNT=0V
VOV=0V
LO, HO
VVCO=0V
VREG=7.2V
VCVCO=0V, VVCO >VCVCO
VCVCO=0V, VREG=7.2V, VRVCO=10V
VCVCO=6V , VREG=7.2V, IRVCO=10mA
HVCC
VCC
VREG
ICC1
ICC2
ICC3
ICC4
VUVr
VUVt
tUV
VOV
tOV
IOV
fVCO
fO
VVCO
IVCO
VCVCO
ICVCO
IrRVCO
VSRVCO
ELECTRICAL CHARACTERISTICS (Ta=25°C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)
VCC=15V, RVCO1=15kΩ, VVCO=0.33VREG
RVCO2=39kΩ, CVCO=100pF, VVCO=0.42VREG
Sep. 2000
—
—
—
–0.22
–0.22
40
—
—
—
—
–0.08
–0.08
—
3.6
1.0
–0.08
—
—
—
14.4
13
5.5
5
0.5
6
14.4
13
5.5
5
0.5
6
50
50
1.0
1.0
–50
–1
–1
20
14
0
0
–50
–0.5
–0.5
30
3.4
0.8
–0.5
30
—
1.0
14
10
1.0
—
—
—
14
10
1.0
—
—
—
—
—
VLN>VLNTH
VLN>VLNTH, VCC<VUVr
VLN > VLNTH, VLNTH=5V
VAB<VABTH
VAB>VABTH
VCNT=0V
VHGND=600V
C=1000pF
IHO=0mA
IHO=–20mA
IHO=–200mA
IHO=0mA
IHO=20mA
IHO=200mA
ILO=0mA
ILO=–20mA
ILO=–200mA
ILO=0mA
ILO=20mA
ILO=200mA
Amplitude 10% 90%, C=1000pF
Amplitude 90% 10%, C=1000pF
LN Input Voltage Limit
LNTH Input Voltage Limit
LN Offset Voltage
LN Input Leak Current
LNTH Input Leak Current
LNTH Input Hysteresis Current
LN Filter Time
AB Input Voltage Limit
ABTH Input Voltage Limit
AB Offset Voltage
AB Input Leak Current
ABTH Input Leak Current
AB Filter Time
CNT Input Threshold Voltage
CNT Input Hysteresis Voltage
CNT Input Leak Current
CNT Filter Time
Floating Supply Leak Current
Dead Time
Output Rise Time
Output Fall Time
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
V
V
mV
µA
µA
µA
µs
V
V
mV
µA
µA
µs
V
V
µA
µs
µA
µs
V
V
V
mV
V
V
V
V
V
mV
V
V
ns
ns
VCC–1.5
VCC–1.5
50
—
—
80
100
VREG–1.5
VREG–1.5
50
—
—
150
3.8
1.2
—
150
1.0
1.9
—
—
—
100
1.0
12
—
—
—
100
1.0
12
120
120
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
VLN
VLNTH
VLNIO
ILN
ILNTH
ILNTHh
tLN
VAB
VABTH
VABIO
IAB
IABTH
tAB
VCNT
VCNTh
ICNT
tCNT
IRFC
tDEAD
VHOH1
VHOH2
VHOH3
VHOL1
VHOL2
VHOL3
VLOH1
VLOH2
VLOH3
VLOL1
VLOL2
VLOL3
tr
tf
ELECTRICAL CHARACTERISTICS (Ta=25°C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)
HO Output Voltage
LO Output Voltage
←
←
OUTPUT FREQUENCY (RVCO1=15kΩ, RVCO2=15kΩ, CVCO=100pF)
0.33VREG
0.42VREG
50kHz
60kHz
Oscillation Frequency VCO Input Voltage Min.
—
—
Typ.
50
60
Max.
—
—
Unit
kHz
kHz
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
DEAD TIME
OUTPUT RISE TIME
FALL TIME
LO
HO
90%
90%
10%
10%
tDEADtDEAD
10% 10%
90% 90%
tr tf
HO, LO
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
PERFORMANCE CURVES
Thermal Derating Factor Characteristic ICC–VCC Characteristic
0
0.5
1
1.5
2
025 7550 150125100 8 13 18 23
Ambient Temperature Ta (°C)
Power Dissipation Pt (W)
VLOL (V)
VCC (V)
8 13 18 23 8 13 18 23
VREG–VCC Characteristic tDEAD–VCC Characteristic
6
0
1
2
3
4
5
ICC (mA)
8 13 18 23 8 13 18 23
VLOH–VCC Characteristic VLOL–VCC Characteristic
7.5
8.0
7.0
6.5
6.0
VREG (V)
VCC (V)
1
1.1
1.2
1.3
1.4
1.5
tDEAD (µs)
VCC (V)
10
0
2
4
6
8
VCC (V)
20
15
10
5
0
VLOH (V)
VCC (V)
On Board
Frequency=115kHz
Frequency=50kHz
Frequency=50kHz
suspended
Standby
tDEAD2
ILO=0mA
ILO=–20mA
ILO=–200mA
ILO=200mA
ILO=20mA
ILO=0
tDEAD1
Non Board
Oscillation
suspended
Oscillation
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
ICC–Ta Caracteristic VREG–Ta Characteristic
0
1
2
3
4
5
6
–50 0 50 100 150 –50 0 50 150100
Ta (°C)
ICC (mA)
VLOL (V)
Ta (°C)
–50 0 50 100 150 –50 500 100 150
VUV–Ta Characteristic tDEAD–Ta Characteristic
7.00
7.05
7.10
7.15
7.20
7.25
7.30
7.35
VREG (V)
–50 0 50 100 150 –50 0 50 100 150
VLOH–Ta Characteristic VLOL–Ta Characteristic
0
2
4
6
8
10
12
VUV (V)
Ta (°C)
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
tDEAD (µs)
Ta (°C)
0
1
2
3
4
5
6
7
8
9
10
Ta (°C)
2
4
6
8
10
12
14
16
0
VLOH (V)
Ta (°C)
ICC4
ICC3
ICC2
ICC1
VUVr
VUVt
Frequency=50kHz
suspended
Oscillation
tDEAD2
tDEAD1
ILO=0mA
ILO=–20mA
ILO=–200mA
ILO=200mA
ILO=20mA
ILO=0mA
Sep. 2000
DIP16-P-300-2.54 Weight(g)
–
JEDEC Code 1.0
EIAJ Package Code Lead Material
Alloy 42/Cu Alloy
16P4
Plastic 16pin 300mil DIP
Symbol Min Nom Max
A
A
2
b
b
1
b
2
c
E
D
L
Dimension in Millimeters
A
1
0.51 – –
–3.3–
0.4 0.5 0.6
1.4 1.5 1.8
0.9 1.0 1.3
0.22 0.27 0.34
18.8 19.0 19.2
6.15 6.3 6.45
–2.54–
–7.62–
3.0 – –
0°–15°
– – 4.5
e
e
1
16
9
8
1
E
c
e1
D
A2
A1
b2
b
b1
e
LA
SEATING PLANE
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
PACKAGE OUTLINE
