PD -94029A IRF5805 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS(on) max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. D D G 1 6 2 5 3 4 -3.0A A D D S Top View TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -30 -3.8 -3.0 -15 2 1.28 0.02 20 -55 to + 150 V A W W W/C V C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. Units 62.5 C/W 1 1/13/03 IRF5805 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 --- --- -1.0 3.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.02 --- --- --- --- --- --- --- --- 11 2.3 1.5 11 14 90 49 511 79 50 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.098 VGS = -10V, ID = -3.8A 0.165 VGS = -4.5V, ID = -3.0A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.8A -15 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 17 ID = -3.8A --- nC VDS = -15V --- VGS = -10V 17 VDD = -15V, VGS = -10V 21 ID = -1.0A ns 135 RG = 6.0 74 RD = 15 --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units -2.0 -15 --- --- --- --- 19 16 -1.2 29 24 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board, t 10sec. max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF5805 100 VGS TOP -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 10 1 0.1 -2.5V VGS -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 100 10 1 -2.5V 0.1 20s PULSE WIDTH Tj = 150C 20s PULSE WIDTH Tj = 25C 0.01 0.01 0.1 1 10 0.1 100 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 TJ = 150 C 1 TJ = 25 C V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 10 100 Fig 2. Typical Output Characteristics 100 0.1 2.0 1 -VDS , Drain-to-Source Voltage (V) 6.0 2.0 ID = -3.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5805 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 600 Ciss 400 200 Coss -VGS , Gate-to-Source Voltage (V) 16 800 ID = -3.8A V DS=-24V V DS=-15V 12 8 4 Crss 0 0 1 10 100 0 6 8 10 12 14 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 4 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 10 TJ = 150 C 1 10us 10 100us 1ms 1 TJ = 25 C 0.1 0.0 10ms TC = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.5 1.0 1.5 2.0 2.5 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 3.0 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5805 4.0 VDS -ID , Drain Current (A) V GS 3.0 RD D.U.T. RG + VDD VGS 2.0 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 10% 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.500 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance) IRF5805 0.450 0.400 0.350 0.300 0.250 0.200 ID = -3.8A 0.150 0.100 0.050 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.400 0.300 VGS = -4.5V 0.200 VGS = -10V 0.100 0.000 0 5 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 10 15 20 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF5805 30 2.5 25 2.3 Power (W) -VGS(th) ( V ) 20 ID = -250A 2.1 1.9 15 10 1.7 5 0 1.5 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF5805 TSOP-6 Package Outline TSOP-6 Tape & Reel Information 8 www.irf.com IRF5805 TSOP-6 Part Marking Information Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN S I3443DV WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR PART NUMBER DATE CODE TOP WAFER LOT NUMBER CODE YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z BOT TOM WW = (27-52) IF PRECEDED BY A LETTER PART NUMBER CODE REFERENCE: 3A = SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DATE CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 X Y Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDED B Y LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5820 LOT CODE YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 X Y IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 1/03 www.irf.com 9