MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2200 is a hermetically sealed, gold metallized silicon NPN
pulse power transistor mounted in a common base balanced
configuration. The MS2200 is designed for applications requiring
high peak power and low duty cycles within the frequency range of
400 – 500 MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 43.2 A
PDISS Power Dissipation 1167 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance 0.15 °°C/W
FeaturesFeatures
• 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle
• Refractory Gold Metallization
• Emitter Ballasting And Low Resistance For Reliability
and Ruggedness
• Infinite VSWR Capability At Specified Operating
Conditions
• Input Matched, Common Base Configuration
• Balanced Configuration
RF AND MICROWAVE TRANSISTORS
UHF PULSED APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Units
BVCBO IC = 50 mA IE = 0 mA 65 V
BVCES IC = 50 mA VBE = 0 V 65 V
BVEBO IE = 10 mA IC = 0 mA 3.5 V
ICES VCE =30 V IE = 0 mA 15 mA
hFE VCE = 5 V IC = 5 A 20 200
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
POUT f = 425 MHz PIN = 54 W VCE = 40 V 500 W
GP f = 425 MHz PIN = 54 W VCE = 40 V 9.7 Db
ηηC f = 425 MHz PIN = 54 W VCE = 40 V 50 %%
Note: Pulse Width = 250µSec, Duty Cycle = 10%
This device is suitable for use under other pulse width/duty cycle conditions.
Please contact the factory for specific applications assistance.
MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TYPICAL PERFORMANCETYPICAL PERFORMANCE
MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TYPICAL PERFORMANCETYPICAL PERFORMANCE ( (CONTINUEDCONTINUED))
MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
TEST CIRCUITTEST CIRCUIT
MS2200
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
