Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 4 1Publication Order Number:
MGP15N35CL/D
MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
•Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition
System Applications
•High Pulsed Current Capability up to 50 A
•Gate–Emitter ESD Protection
•Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
•Integrated ESD Diode Protection
•Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
•Low Saturation Voltage
•Optional Gate Resistor (RG)
MAXIMUM RATINGS (–55°C ≤ TJ ≤ 175°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 380 VDC
Collector–Gate Voltage VCER 380 VDC
Gate–Emitter Voltage VGE 22 VDC
Collector Current–Continuous
@ TC = 25°C – Pulsed IC15
50 ADC
AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF ESD 8.0 kV
ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD150
1.0 Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg –55 to
175 °C
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE
CHARACTERISTICS (–55°C ≤ TJ ≤ 175°C)
Characteristic Symbol Value Unit
Single Pulse Collector–to–Emitter Avalanche
Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L
= 2.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L
= 2.0 mH, Starting TJ = 150°C
EAS
300
200
mJ
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3.0 mH,
Pk IL = 25.8 A, Starting TJ = 25°C
EAS(R) 1000 mJ
1
Gate 3
Emitter
4
Collector
2
Collector
1
Gate 3
Emitter
4
Collector
2
Collector
TO–220AB
CASE 221A
STYLE 9
123
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N35CL = Device Code
Y = Year
WW = Work Week
G15N35CL
YWW
G15N35CL
YWW
123
4
D2PAK
CASE 418B
STYLE 4
Device Package Shipping
ORDERING INFORMATION
MGP15N35CL TO–220 50 Units/Rail
MGB15N35CLT4 D2PAK 800 Tape & Reel
15 AMPERES
350 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
http://onsemi.com
N–Channel
Preferred devices are recommended choices for future use
and best overall value.
C
E
G
RGE
RG
MGP15N35CL, MGB15N35CL
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.0 °C/W
Thermal Resistance, Junction to Ambient TO–220 RθJA 62.5
D2PAK (Note 1.) RθJA 50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL275 °C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Volta
g
e BV
CES
I
C
= 2.0 mA T
J
= –40°C to 320 350 380 V
DC
Collector Emitter
Clam
Voltage
BVCES
IC
=
2
.
0
mA
TJ
=
40 C
to
150°C
320
350
380
VDC
IC = 10 mA TJ = –40°C to
150°C330 360 380
Zero Gate Voltage Collector Current ICES
V 300 V
TJ = 25°C – 1.5 20 µADC
g
CES
VCE = 300 V,
V
GE
=
0
V TJ = 150°C – 10 40*
µDC
VGE
=
0
V
TJ = –40°C – 0.7 1.5
Reverse Collector–Emitter Leakage Current IECS
V24V
TJ = 25°C – 0.35 1.0 mA
g
ECS
VCE = –24 V TJ = 150°C – 8.0 15*
TJ = –40°C – 0.05 0.5
Reverse Collector–Emitter Clamp Voltage BVCES(R)
I75A
TJ = 25°C 25 33 50 VDC
g
VCES(R)
IC = –75 mA TJ = 150°C 25 36 50
DC
TJ = –40°C 25 30 50
Gate–Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = –40°C to
150°C17 20 22 VDC
Gate–Emitter Leakage Current IGES VGE = 10 V TJ = –40°C to
150°C384 600 1000 µADC
Gate Resistor (Optional) RG– TJ = –40°C to
150°C– 70 – Ω
Gate Emitter Resistor RGE – TJ = –40°C to
150°C10 16 26 kΩ
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage VGE(th)
I10A
TJ = 25°C 1.4 1.7 2.0 VDC
g
GE(th)
IC = 1.0 mA,
V
GE
= V
CE
TJ = 150°C 0.75 1.1 1.4
DC
VGE
=
VCE
TJ = –40°C 1.6 1.9 2.1*
Threshold Temperature Coefficient
(Negative) – – – – 4.4 – mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
*Maximum Value of Characteristic across Temperature Range.
MGP15N35CL, MGB15N35CL
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3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3.)
Collector–to–Emitter On–Voltage VCE(on)
I 60A
TJ = 25°C 1.0 1.3 1.6 VDC
g
CE(on)
IC = 6.0 A,
V
GE
= 4.
0
V TJ = 150°C 0.9 1.2 1.5
DC
VGE
=
4
.
0
V
TJ = –40°C 1.1 1.4 1.7*
I10A
TJ = 25°C 1.3 1.6 1.9
IC = 10 A,
V
GE
= 4.
0
V TJ = 150°C 1.2 1.5 1.8
VGE
=
4
.
0
V
TJ = –40°C 1.3 1.6 1.9*
I15A
TJ = 25°C 1.6 1.95 2.25
IC = 15 A,
V
GE
= 4.
0
V TJ = 150°C 1.7 2.0 2.3*
VGE
=
4
.
0
V
TJ = –40°C 1.6 1.9 2.2
I20A
TJ = 25°C 1.9 2.2 2.5
IC = 20 A,
V
GE
= 4.
0
V TJ = 150°C 2.1 2.4 2.7*
VGE
=
4
.
0
V
TJ = –40°C 1.85 2.15 2.45
I25A
TJ = 25°C 2.1 2.5 2.9
IC = 25 A,
V
GE
= 4.
0
V TJ = 150°C 2.5 2.9 3.3*
VGE
=
4
.
0
V
TJ = –40°C 2.0 2.4 2.8
Collector–to–Emitter On–Voltage VCE(on) IC = 10 A, VGE = 4.5 V TJ = 150°C – 1.5 1.8 VDC
Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = –40°C to
150°C8.0 15 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance CISS
V25VV0V
T40°C
– 1000 1300 pF
Output Capacitance COSS VCC = 25 V, VGE = 0 V
f = 1.
0
MHz TJ = –40°C to
1
50
°
C
– 100 130
Transfer Capacitance CRSS
f
=
1
.
0
MHz
150°C
– 5.0 8.0
SWITCHING CHARACTERISTICS (Note 3.)
Turn–Off Delay Time (Inductive) td(off) VCC = 300 V, IC = 6.5 A
R 10kΩL 300 H
TJ = 25°C – 4.0 10 µSec
y( )
d(off)
CC ,C
RG = 1.0 kΩ, L = 300 µHTJ = 150°C – 4.5 10
µ
Fall Time (Inductive) tfVCC = 300 V, IC = 6.5 A
R 10kΩL 300 H
TJ = 25°C – 7.0 10
()
f
CC ,C
RG = 1.0 kΩ, L = 300 µHTJ = 150°C – 10 15*
Turn–Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A
R 10kΩR46Ω
TJ = 25°C – 4.0 10 µSec
y( )
d(off)
CC ,C
RG = 1.0 kΩ, RL = 46 Ω,TJ = 150°C – 4.5 10
µ
Fall Time (Resistive) tfVCC = 300 V, IC = 6.5 A
R 10kΩR46Ω
TJ = 25°C – 13 20
()
f
CC ,C
RG = 1.0 kΩ, RL = 46 Ω,TJ = 150°C – 16 20
Turn–On Delay Time td(on) VCC = 10 V, IC = 6.5 A
R 10kΩR15Ω
TJ = 25°C – 1.0 1.5 µSec
y
d(on)
CC ,C
RG = 1.0 kΩ, RL = 1.5 ΩTJ = 150°C – 1.0 1.5
µ
Rise Time trVCC = 10 V, IC = 6.5 A
R 10kΩR15Ω
TJ = 25°C – 4.5 6.0
r
CC ,C
RG = 1.0 kΩ, RL = 1.5 ΩTJ = 150°C – 5.0 6.0
3. Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
*Maximum Value of Characteristic across Temperature Range.
MGP15N35CL, MGB15N35CL
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4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
0
40
6
10
42
IC, COLLECTOR CURRENT (AMPS)
0
60
20
30
50
81357
10000
1000
100
10
1
1.0
0.5
0.0
1.5
2.0
2.5
2.5
0
40
6
10
42
IC, COLLECTOR CURRENT (AMPS)
0
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics Figure 2. Output Characteristics
0
25
20
15
10
21.51
5
30
00.5 2.5 3 3.5
Figure 3. Transfer Characteristics
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Collector–to–Emitter Saturation
Voltage vs. Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Capacitance Variation
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 6. Threshold Voltage vs. Temperature
TEMPERATURE (°C)
C, CAPACITANCE (pF)
THRESHOLD VOLTAGE (VOLTS)
60
0 120604020 140 180
–50 50 75250 100–25 125
1.0
3.0
0.5
2.0
0.0
3.5
4.0
VGE = 10.0 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
81357
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
TJ = 25°C TJ = 150°C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.5 V
VGE = 4.0 V
VGE = 3.5 V
VGE = 3.0 V
VGE = 2.5 V
VCE = 10 V
TJ = 25°C
TJ = 150°C
TJ = –40°C
4 4.5 5
1.5
150
VGE = 5.0 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
20080 100 160 –50 50 75250 100–25 125 150
Mean + 4 σ
Mean – 4 σ
Mean IC = 1 mA
Crss
Ciss
Coss
MGP15N35CL, MGB15N35CL
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5
20
10
25
5
15
0
30
TEMPERATURE (°C)
IL, LATCH CURRENT (AMPS)
L = 2.0 mH
–50 50 75250 100–25 125 150 175
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 3.0 mH
L = 6.0 mH
0
20
642
IL, LATCH CURRENT (AMPS)
0
30
INDUCTOR (mH)
5
10
15
25
810
T = 25°C
T = 150°C
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
12
10
6
8
4
2
0
2
4
0
6
8
10
12
14
20
10
25
5
15
0
30
0
20
642
IL, LATCH CURRENT (AMPS)
0
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
IL, LATCH CURRENT (AMPS)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor Figure 10. Typical Open Secondary Latch
Current vs. Temperature
Figure 11. Switching Speed vs. Case
Temperature
TC, CASE TEMPERATURE (°C)
Figure 12. Switching Speed vs. Collector
Current
IC, COLLECTOR CURRENT (AMPS)
SWITCHING TIME (µS)
SWITCHING TIME (µS)
30
08106412216
L = 2.0 mH
INDUCTOR (mH)
5
10
15
25
810
T = 25°C
T = 150°C
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
–50 50 75250 100–25 125 150 175
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 3.0 mH
L = 6.0 mH
–50 50 75250 100–25 125 150
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
IC = 10 A
L = 300 µHVCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
TJ = 150°C
L = 300 µH
14
td(off)
tf
td(off)
tf
MGP15N35CL, MGB15N35CL
http://onsemi.com
6
250 500
RG, EXTERNAL GATE RESISTANCE (Ω)
750 1000
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300 µH
2
4
0
6
8
10
12
14
250 500
SWITCHING TIME (µS)
Figure 13. Switching Speed vs. External Gate
Resistance Figure 14. Switching Speed vs. External Gate
Resistance
SWITCHING TIME (µS)
RG, EXTERNAL GATE RESISTANCE (Ω)
750 1000
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
IC = 10 A
L = 300 µH
2
4
0
6
8
10
12
14
td(off)
tf
td(off)
tf
0.2
0.00001 0.0010.0001 0.1
10
1
0.01 0.01
t,TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Single Pulse
110
0.1
0.05
0.02
0.01
100 1000
Duty Cycle = 0.5
0.1
Figure 15. Transient Thermal Resistance
(Non–normalized Junction–to–Ambient mounted on
fixture in Figure 16)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) – TA = P(pk) RθJA(t)
RθJC ≅ R(t) for t ≤ 0.2 s
MGP15N35CL, MGB15N35CL
http://onsemi.com
7
1.5″
4″
4″
4″
0.125″
Figure 16. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8 thick aluminum)
100
10
0.1
1
0.01
Figure 17. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25C)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 18. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125C)
COLLECTOR–EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
1 10010 1000
100
10
0.1
1
0.011 10010 1000
100 µs
10 ms
1 ms
100 ms
DC
100 µs
10 ms
1 ms
100 ms
DC
MGP15N35CL, MGB15N35CL
http://onsemi.com
8
100
10
0.1
1
0.01
COLLECTOR–EMITTER VOLTAGE (VOLTS) COLLECTOR–EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
1 10010 1000
100
10
0.1
1
0.011 10010 1000
DC
t1 = 1 ms, D = 0.05
DC
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
Figure 19. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 25C) Figure 20. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 125C)
MGP15N35CL, MGB15N35CL
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9
PACKAGE DIMENSIONS
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TO–220 THREE–LEAD
TO–220AB
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
MGP15N35CL, MGB15N35CL
http://onsemi.com
10
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D2PAK
CASE 418B–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
S
G
D
–T–
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
–B–
M
B
MGP15N35CL, MGB15N35CL
http://onsemi.com
11
Notes
MGP15N35CL, MGB15N35CL
http://onsemi.com
12
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MGP15N35CL/D
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