NVMFD5C466NL Power MOSFET 40 V, 7.4 mW, 52 A, Dual N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 7.4 m @ 10 V 40 V Symbol Value Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V ID 52 A Continuous Drain Current RJC (Notes 1, 2, 3) TC = 25C Power Dissipation RJC (Notes 1, 2) Continuous Drain Current RJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C Power Dissipation RJA (Notes 1, 2) Pulsed Drain Current Steady State PD ID Operating Junction and Storage Temperature Range Source Current (Body Diode) W 38 S2 S1 A 15 PD MARKING DIAGRAM W 3.0 1.5 D1 D1 IDM 198 A TJ, Tstg -55 to +175 C IS 31.3 A Single Pulse Drain-to-Source Avalanche Energy (TJ = 25C, IL(pk) = 3 A) EAS 72 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter G2 G1 11 TA = 100C TA = 25C, tp = 10 s D2 D1 19 TA = 100C TA = 25C Dual N-Channel 37 TC = 100C TA = 25C 52 A 12.6 m @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter ID MAX Symbol Value Unit Junction-to-Case - Steady State RJC 4 C/W Junction-to-Ambient - Steady State (Note 2) RJA 47.3 1 DFN8 5x6 (SO8FL) CASE 506BT A Y W ZZ S1 G1 S2 G2 XXXXXX AYWZZ D1 D1 D2 D2 D2 D2 = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2017 April, 2019 - Rev. 4 1 Publication Order Number: NVMFD5C466NL/D NVMFD5C466NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 29 VGS = 0 V, VDS = 40 V mV/C TJ = 25 C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 30 A 100 A nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 1.2 2.2 -4.7 VGS = 10 V ID = 10 A 6.2 7.4 VGS = 4.5 V ID = 10 A 10 12.6 gFS VDS = 15 V, ID = 25 A V mV/C 33 m S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 997 VGS = 0 V, f = 1 MHz, VDS = 25 V 354 pF 13 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 25 A 7.0 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 25 A 16 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Plateau Voltage VGP 3.3 td(ON) 10 1.5 VGS = 4.5 V, VDS = 32 V; ID = 25 A nC 2.3 2.2 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 25 A, RG = 1.0 tf 67 ns 26 60 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25C 0.9 TJ = 125C 0.7 tRR ta tb 1.2 V 20 VGS = 0 V, dIS/dt = 100 A/s, IS = 25 A QRR 10 ns 10 8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 s, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFD5C466NL TYPICAL CHARACTERISTICS 100 VGS = 10 to 5 V ID, DRAIN CURRENT (A) 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 70 60 50 40 30 TJ = 25C 20 0.5 1.0 1.5 2.0 2.5 0 3.0 0 TJ = -55C 2 1 3 4 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 15 10 5 4 5 6 7 8 9 10 6 5 VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 10 A TJ = 25C 3 TJ = 125C VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (m) 0 25 0 80 10 14 13 TJ = 25C VGS = 4.5 V 12 11 10 9 8 7 VGS = 10 V 6 5 4 5 10 15 20 25 30 40 35 45 50 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.1 2.0 ID = 10 A 1.9 V GS = 10 V 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 100K TJ = 150C 10K IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (m) 0 VDS = 10 V 90 4.5 V 60 ID, DRAIN CURRENT (A) 70 TJ = 125C 1K TJ = 85C 100 TJ = 25C 10 25 50 75 100 125 150 1 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFD5C466NL TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K Ciss 1K Coss 100 Crss 10 1 TJ = 25C VGS = 0 V f = 1 MHz 0 5 10 15 20 25 30 35 40 5 Qgs 4 10 Qgd 3 2 VDS = 32 V ID = 25 A 1 0 0 10 IS, SOURCE CURRENT (A) t, TIME (ns) TJ = 25C 6 1 2 3 4 5 6 7 8 9 Figure 8. Gate-to-Source vs. Total Charge td(off) td(on) VGS = 4.5 V VDS = 32 V ID = 25 A 1 10 TJ = 125C 1 0.1 100 10 VGS = 0 V TJ = 25C 0.3 0.4 0.5 0.6 TJ = -55C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25C VGS 10 V Single Pulse TJ(initial) = 25C 10 IPEAK (A) ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation tf 100 8 Qg, TOTAL GATE CHARGE (nC) 100 tr 1000 QT 9 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1 10 10 s 10 TJ(initial) = 100C 1 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms 100 1000 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFD5C466NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping NVMFD5C466NLT1G 5C466L DFN8 (Pb-Free) 1500 / Tape & Reel NVMFD5C466NLWFT1G 466LWF DFN8 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFD5C466NL PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual) CASE 506BT ISSUE E 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. 0.20 C D A B D1 8 7 6 EE EE PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 E1 E 4X h c 3 A1 4 TOP VIEW DETAIL B 0.10 C 0.10 C NOTE 4 SIDE VIEW C DETAIL A 4X 4X b1 8 5 K1 BOTTOM VIEW 2X 0.56 L 4.84 N G 2X 2.08 K 4 DETAIL B 4X 4.56 0.75 e M SOLDERING FOOTPRINT* SEATING PLANE NOTE 6 8X D2 D3 1 ALTERNATE CONSTRUCTION DETAIL A A 8X 4X 1.40 2.30 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N MILLIMETERS MIN MAX MAX 0.90 1.10 --- --- --- 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 --- 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 --- --- 12 _ 0.51 --- --- 0.56 --- --- 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 6.59 3.70 E2 0.70 b 0.10 C A B 0.05 C NOTE 3 4X 1.27 PITCH 5.55 1.00 DIMENSION: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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