ISL9V3040x3ST-F085C EcoSPARK Ignition IGBT 300 mJ, 400 V, N-Channel Ignition IGBT Features * * * * SCIS Energy = 300 mJ at TJ = 25C Logic Level Gate Drive AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com COLLECTOR Applications * Automotive Ignition Coil Driver Circuits * High Current Ignition System * Coil on Plug Application R1 GATE R2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 400 V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 KW, TC = 25C (Note 1) 300 mJ 170 mJ ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy, RGE = 1 KW, TC = 150C (Note 2) IC25 Collector Current Continuous at VGE = 4.0 V, TC = 25C 21 A IC110 Collector Current Continuous at VGE = 4.0 V, TC = 110C 17 A VGEM Gate to Emitter Voltage Continuous 10 V PD Power Dissipation Total, TC = 25C 150 W 1 W/C -55 to +175 C Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 300 C TPKG Reflow Soldering according to JESD020C 260 C ESD HBM-Electrostatic Discharge Voltage at 100 pF, 1500 W 4 kV CDM-Electrostatic Discharge Voltage at 1 W 2 kV Power Dissipation Derating, TC > 25C TJ, TSTG Operating Junction and Storage Temperature TL EMITTER D2PAK-3 CASE 418AJ DPAK3 CASE 369AS MARKING DIAGRAM AYWW XXX XXXXXG A Y WW XXXX G = Assembly Location = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on the test conditions that is starting TJ = 25C, L = 3 mHy, ISCIS = 14.2 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. 2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on the test conditions that is starting TJ = 150C, L = 3mHy, ISCIS = 10.6 A, VCC = 100 V during inductor charging and VCC = 0 V during time in clamp. (c) Semiconductor Components Industries, LLC, 2016 August, 2019 - Rev. 1 1 Publication Order Number: ISL9V3040-F085C//D ISL9V3040x3ST-F085C THERMAL RESISTANCE RATINGS Characteristic Symbol Max Units RqJC 1 C/W Junction-to-Case - Steady State (Drain) ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Parameter Test Conditions Min Typ. Max. Units OFF CHARACTERISTICS BVCER Collector to Emitter Breakdown Voltage ICE = 2 mA, VGE = 0 V, RGE = 1 kW, TJ = -40 to 150C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage ICE = 10 mA, VGE = 0 V, RGE = 0, TJ = -40 to 150C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage ICE = -75 mA, VGE = 0 V, TJ = 25C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = 2 mA 12 14 - V ICER Collector to Emitter Leakage Current VCE = 175 V RGE = 1 kW TJ = 25C - - 25 mA TJ = 150C - - 1 mA VEC = 24 V TJ = 25C - - 1 mA TJ = 150C - - 40 - 70 - W 10K - 26K W IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ON CHARACTERISTICS VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6 A, VGE = 4 V, TJ = 25C - 1.25 1.65 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10 A, VGE = 4.5 V, TJ = 150C - 1.58 1.80 V VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15 A, VGE = 4.5 V, TJ = 150C - 1.90 2.20 V DYNAMIC CHARACTERISTICS QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA VCE = VGE Gate to Emitter Plateau Voltage VCE = 12 V, ICE = 10 A VGEP - 17 - nC TJ = 25C 1.3 - 2.2 V TJ = 150C 0.75 - 1.8 - 3.0 - V VCE = 14 V, RL = 1 W, VGE = 5 V, RG = 470 W, TJ = 25C - 0.7 4 ms - 2.1 7 VCE = 300 V, L = 1 mH, VGE = 5 V, RG = 470 W, ICE = 6.5 A, TJ = 25C - 4.8 15 - 2.8 15 SWITCHING CHARACTERISTICS td(ON)R trR td(OFF)L tfL Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. PACKAGE MARKING AND ORDERING INFORMATION Device Package Shipping ISL9V3040D3ST-F085C DPAK (Pb-Free) 2500 Units/Tape & Reel ISL9V3040S3ST-F085C D2PAK (Pb-Free) 800 Units/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 ISL9V3040x3ST-F085C TYPICAL CHARACTERISTICS Figure 1. Self Clamped Inductive Switching Current vs. Time in Clamp Figure 2. Self Clamped Inductive Switching Current vs. Inductance Figure 4. Collector to Emitter On-State Voltage vs. Junction Temperature Figure 3. Collector to Emitter On-State Voltage vs. Junction Temperature Figure 5. Collector to Emitter On-State Voltage vs. Collector Current Figure 6. Collector to Emitter On-State Voltage vs. Collector Current www.onsemi.com 3 ISL9V3040x3ST-F085C TYPICAL CHARACTERISTICS (continued) Figure 7. Collector to Emitter On-State Voltage vs. Collector Current Figure 8. Transfer Characteristics Figure 9. DC Collector Current vs. Case Temperature Figure 10. Gate Charge Figure 11. Threshold Voltage vs. Junction Temperature Figure 12. Leakage Current vs. Junction Temperature www.onsemi.com 4 ISL9V3040x3ST-F085C TYPICAL CHARACTERISTICS (continued) Figure 13. Switching Time vs. Junction Temperature Figure 14. Capacitance vs. Collector to Emitter Figure 15. Break Down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case www.onsemi.com 5 ISL9V3040x3ST-F085C TEST CIRCUIT AND WAVEFORMS Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit Figure 19. Energy Test Circuit Figure 20. Energy Waveforms www.onsemi.com 6 ISL9V3040x3ST-F085C PACKAGE DIMENSIONS DPAK3 (TO-252 3 LD) CASE 369AS ISSUE O www.onsemi.com 7 ISL9V3040x3ST-F085C PACKAGE DIMENSIONS D2PAK-3 (TO-263, 3-LEAD) CASE 418AJ ISSUE C B E2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CHAMFER OPTIONAL 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.005 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN DIMENSIONS E, L1, D1 AND E1. A A E SEATING PLANE L1 c2 NOTE 3 A D1 L1 D H DETAIL C E1 0.10 L2 e TOP VIEW b 0.10 B A B SEATING PLANE M A c 2X M VIEW A-A SIDE VIEW M B A M H GAUGE PLANE L3 A1 L M DETAIL C VIEW A-A OPTIONAL CONSTRUCTIONS RECOMMENDED SOLDERING FOOTPRINT* 0.436 0.366 0.653 2X 0.169 2X 0.063 0.100 PITCH DIMENSIONS: INCHES *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 DIM A A1 b c c2 D D1 E E1 e H L L1 L2 L3 M INCHES MIN MAX 0.160 0.190 0.000 0.010 0.020 0.039 0.012 0.029 0.045 0.065 0.330 0.380 0.260 ---- 0.380 0.420 0.245 ---- 0.100 BSC 0.575 0.625 0.070 0.110 ---- 0.066 ---- 0.070 0.010 BSC -8 8 MILLIMETERS MIN MAX 4.06 4.83 0.00 0.25 0.51 0.99 0.30 0.74 1.14 1.65 8.38 9.65 6.60 ---- 9.65 10.67 6.22 ---- 2.54 BSC 14.60 15.88 1.78 2.79 ---- 1.68 ---- 1.78 0.25 BSC -8 8 ISL9V3040x3ST-F085C ECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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