© Semiconductor Components Industries, LLC, 2016
August, 2019 − Rev. 1
1Publication Order Number:
ISL9V3040−F085C//D
ISL9V3040x3ST-F085C
EcoSPARK Ignition IGBT
300 mJ, 400 V, N−Channel Ignition IGBT
Features
•SCIS Energy = 300 mJ at TJ = 25°C
•Logic Level Gate Drive
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Automotive Ignition Coil Driver Circuits
•High Current Ignition System
•Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Unit
BVCER Collector to Emitter Breakdown
Voltage (IC = 1 mA)
400 V
BVECS Emitter to Collector Voltage − Reverse
Battery Condition (IC = 10 mA)
24 V
ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy,
RGE = 1 KW, TC = 25°C (Note 1)
300 mJ
ESCIS150 ISCIS = 10.6 A, L = 3.0 mHy,
RGE = 1 KW, TC = 150°C (Note 2)
170 mJ
IC25 Collector Current Continuous
at VGE = 4.0 V, TC = 25°C
21 A
IC110 Collector Current Continuous
at VGE = 4.0 V, TC = 110°C
17 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD Power Dissipation Total, TC = 25°C150 W
Power Dissipation Derating, TC > 25°C1W/°C
TJ, TSTG Operating Junction and Storage
Temperature
−55 to +175 °C
TLLead Temperature for Soldering
Purposes (1/8” from case for 10 s)
300 °C
TPKG Reflow Soldering according to
JESD020C
260 °C
ESD HBM−Electrostatic Discharge Voltage
at 100 pF, 1500 W
4kV
CDM−Electrostatic Discharge Voltage
at 1 W
2kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.6 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
DPAK3
CASE 369AS
See detailed ordering and shipping information on page 2
of this data sheet.
ORDERING INFORMATION
www.onsemi.com
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
XXXX = Device Code
G = Pb−Free Package
AYWW
XXX
XXXXXG
GATE
COLLECTOR
EMITTER
R1
R2
D2PAK−3
CASE 418AJ
ISL9V3040x3ST−F085C
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2
THERMAL RESISTANCE RATINGS
Characteristic Symbol Max Units
Junction−to−Case – Steady State (Drain) RqJC 1°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol Parameter Test Conditions Min Typ. Max. Units
OFF CHARACTERISTICS
BVCER Collector to Emitter Breakdown
Voltage
ICE = 2 mA, VGE = 0 V,
RGE = 1 kW,
TJ = −40 to 150°C
370 400 430 V
BVCES Collector to Emitter Breakdown
Voltage
ICE = 10 mA, VGE = 0 V,
RGE = 0,
TJ = −40 to 150°C
390 420 450 V
BVECS Emitter to Collector Breakdown
Voltage
ICE = −75 mA, VGE = 0 V,
TJ = 25°C
30 − − V
BVGES Gate to Emitter Breakdown Voltage IGES = ±2 mA ±12 ±14 −V
ICER Collector to Emitter Leakage Current VCE = 175 V
RGE = 1 kW
TJ = 25°C− − 25 mA
TJ = 150°C− − 1 mA
IECS Emitter to Collector Leakage Current VEC = 24 V TJ = 25°C− − 1mA
TJ = 150°C− − 40
R1Series Gate Resistance −70 −W
R2Gate to Emitter Resistance 10K −26K W
ON CHARACTERISTICS
VCE(SAT) Collector to Emitter Saturation
Voltage
ICE = 6 A, VGE = 4 V, TJ = 25°C−1.25 1.65 V
VCE(SAT) Collector to Emitter Saturation
Voltage
ICE = 10 A, VGE = 4.5 V, TJ = 150°C−1.58 1.80 V
VCE(SAT) Collector to Emitter Saturation
Voltage
ICE = 15 A, VGE = 4.5 V, TJ = 150°C−1.90 2.20 V
DYNAMIC CHARACTERISTICS
QG(ON) Gate Charge ICE = 10 A, VCE = 12 V, VGE = 5 V −17 −nC
VGE(TH) Gate to Emitter Threshold Voltage ICE = 1 mA
VCE = VGE
TJ = 25°C 1.3 −2.2 V
TJ = 150°C 0.75 −1.8
VGEP Gate to Emitter Plateau Voltage VCE = 12 V, ICE = 10 A −3.0 −V
SWITCHING CHARACTERISTICS
td(ON)R Current Turn−On Delay
Time−Resistive
VCE = 14 V, RL = 1 W,
VGE = 5 V, RG = 470 W,
TJ = 25°C
−0.7 4 ms
trR Current Rise Time−Resistive −2.1 7
td(OFF)L Current Turn−Off Delay
Time−Inductive
VCE = 300 V, L = 1 mH,
VGE = 5 V, RG = 470 W,
ICE = 6.5 A, TJ = 25°C
−4.8 15
tfL Current Fall Time−Inductive −2.8 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Device Package Shipping†
ISL9V3040D3ST−F085C DPAK
(Pb−Free)
2500 Units/Tape & Reel
ISL9V3040S3ST−F085C D2PAK
(Pb−Free)
800 Units/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ISL9V3040x3ST−F085C
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive
Switching Current vs. Inductance
Figure 3. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 4. Collector to Emitter On−State Voltage
vs. Junction Temperature
Figure 5. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On−State Voltage
vs. Collector Current
ISL9V3040x3ST−F085C
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4
TYPICAL CHARACTERISTICS (continued)
Figure 7. Collector to Emitter On−State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Gate Charge
Figure 11. Threshold Voltage vs. Junction
Temperature
Figure 12. Leakage Current vs. Junction
Temperature
ISL9V3040x3ST−F085C
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8
PACKAGE DIMENSIONS
D
2
PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.330 0.380 8.38 9.65
E0.380 0.420 9.65 10.67
A0.160 0.190 4.06 4.83
b0.020 0.039 0.51 0.99
c2 0.045 0.065 1.14 1.65
e0.100 BSC 2.54 BSC
A1 0.000 0.010 0.00 0.25
c0.012 0.029 0.30 0.74
L0.070 0.110 1.78 2.79
H0.575 0.625 14.60 15.88
L2 −−−− 0.070 −−−− 1.78
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. CHAMFER OPTIONAL
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH. MOLD FLASH SHALL NOT EXCEED 0.005
PER SIDE. THESE DIMENSIONS ARE MEASURED
AT THE OUTERMOST EXTREMES OF THE PLAS-
TIC BODY AT DATUM H.
5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN
DIMENSIONS E, L1, D1 AND E1.
E1 0.245 −−−− 6.22 −−−−
L1 −−−− 0.066 −−−− 1.68
D1 0.260 −−−− 6.60 −−−−
L3 0.010 BSC 0.25 BSC
M−88−88°° °°
E
D
H
L1
b
e
A1 B
H
L
MDETAIL C
SEATING
PLANE
A
2X
M
A
M
0.10 B
c2
c
A
BSEATING
PLANE
DETAIL C
VIEW A−A
SIDE VIEW
TOP VIEW
E2
L2
A
A
VIEW A−A
E1
D1
L1
OPTIONAL CONSTRUCTIONS
L3
GAUGE
PLANE
NOTE 3
M
A
M
0.10 B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
0.366
0.100
DIMENSIONS: INCHES
PITCH
2X
0.653
0.063
2X
0.436
0.169
SOLDERING FOOTPRINT*
ISL9V3040x3ST−F085C
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9
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ISL9V3040−F085C/D
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