MICROWAVE POWER GaAs FET TIM1414-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 30.0dBm Single Carrier Level n HIGH POWER P1dB=42.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current SYMBOL P1dB IDS2 Channel Temperature Rise Tch G1dB IDS1 G CONDITIONS UNIT dBm MIN. 41.0 dB 5.0 6.0 A dB % dBc -42 4.5 29 -45 5.5 0.8 (Single Carrier Level) A 4.5 5.5 (VDS X IDS + Pin - P1dB) X Rth(c-c) C 100 UNIT MIN. TYP. MAX. mS 3000 V -1.5 -3.0 -4.5 A 10.0 V -5 C/W 2.0 2.5 VDS= 9V f= 14.0 to 14.5GHz add IM3 Two-Tone Test Po=30.0 dBm TYP. MAX. 42.0 Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM1414-15L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 C) PT W 60 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 4-R3.0 2.0 MIN. PACKAGE OUTLINE (2-11C1B) (1) Unit in mm (1) Gate (2) 12.90.2 (2) Source (3) (3) Drain 2.0 MIN. 3.20.3 (2) 0.60.15 17.00.3 5.0 MAX. 2.60.3 0.2 MAX. 11.0 MAX. 1.70.3 0.1 -0.0 +0.1 21.5 MAX.. HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1414-15L RF PERFORMANCE Pout(dBm) Output Power (Pout) vs. Frequency VDS=9V IDS4.5A 44 Pin=36.0 dBm 43 42 41 40 14.0 14.25 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 44 freq.=14.5GHz 43 VDS=9V 50 IDS4.0A Pout Pout(dBm) 41 40 40 39 30 38 add 37 20 36 35 10 29 31 33 35 Pin(dBm) 3 37 39 add(%) 42 TIM1414-15L Power Dissipation(PT) vs. Case Temperature(Tc) PT(W) 60 30 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=9V -20 freq.=14.5GHz f=5MHz IM3(dBc) -30 -40 -50 -60 24 26 28 30 Pout(dBm) @Single carrier level 4 32 34