© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ250 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C64A
IDM TC= 25°C, pulse width limited by TJM 160 A
IAR TC= 25°C60A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99120E(12/05)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 250 V
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 49 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
TO-3P (IXTQ)
G
DS(TAB)
TO-268 (IXTT)
GSD (TAB)
IXTQ 64N25P
IXTT 64N25P
VDSS = 250 V
ID25 = 64 A
RDS(on) ≤ ≤
≤ ≤
≤ 49 mΩΩ
ΩΩ
Ω
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 64N25P
IXTT 64N25P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 20 30 S
Ciss 3450 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 640 pF
Crss 155 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 23 ns
td(off) RG = 4 Ω (External) 60 ns
tf20 ns
Qg(on) 105 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 nC
Qgd 53 nC
RthJC 0.31°C/W
RthCS (TO-3P) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 64 A
ISM Repetitive 160 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 200 ns
QRM VR = 100 V, VGS = 0 V 3.0 µC
TO-268 (IXTT) Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXTQ 64N25P
IXTT 64N25P
Fig. 2. Exte nded Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
02468101214161820
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characte ristics
@ 125
º
C
0
8
16
24
32
40
48
56
64
012345678
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characte ristics
@ 25
º
C
0
8
16
24
32
40
48
56
64
0 0.5 1 1.5 2 2.5 3 3.5 4
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs . Junction Te m perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalized
ID
= 64A
ID
= 32A
VGS = 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs . I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
0 30 60 90 120 150 180
I
D
- Amperes
R
D S ( o n )
- Normalized
TJ
= 125ºC
TJ
= 25ºC
VGS = 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 64N25P
IXTT 64N25P
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110
Q G - nanoCoulombs
V
G S
- Volts
VDS
= 125V
ID
= 32A
IG
= 10mA
Fig. 7. Input Admittance
0
15
30
45
60
75
90
105
120
44.5 55.5 66.5 77.5 8
VG S - Volts
I
D
- Amperes
TJ = 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0153045607590105120135
I D
- Amperes
g f s - Siemens
TJ = -40ºC
25ºC
125ºC
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
30
60
90
120
150
180
0.4 0.6 0.8 1 1.2 1.4
VS D - Volts
I
S
- Amperes
TJ
= 125ºC
TJ
= 25ºC
Fig. 12. For w ar d-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
VD S - Volts
I
D
- Amperes
100µs
1ms
DC
TJ = 150ºC
TC = 25ºCRDS(on) Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXTQ 64N25P
IXTT 64N25P
Fig. 13. Maxim um Trans ient Therm al Re sistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
