Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA
• Dual diode VR = 600 V
• Extremely fast switching
• Low reverse recovery current VF ≤ 1.75 V
• Low thermal resistance
• Reduces switching losses in IO(AV) = 10 A
associated MOSFET trr = 19 ns (typ)
APPLICATIONS PINNING SOT78 (TO220AB)
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 anode 1
mode power supplies. 2 cathode
The BYC10-600CT is supplied in
the SOT78 (TO220AB) 3 anode 2
conventional leaded package. tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM Peak repetitive reverse voltage - 600 V
VRWM Crest working reverse voltage - 600 V
VRContinuous reverse voltage Tmb ≤ 110 ˚C - 500 V
IO(AV) Average output current (both δ = 0.5; with reapplied VRRM(max); - 10 A
diodes conducting) Tmb ≤ 50 ˚C1
IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 10 A
per diode Tmb ≤ 50 ˚C1
IFSM Non-repetitive peak forward t = 10 ms - 40 A
current per diode t = 8.3 ms - 44 A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C
TjOperating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to per diode - - 2.5 K/W
mounting base both diodes - - 2.2 K/W
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient
k
a1 a2
13
2
123
tab
1 Tmb(max) limited by thermal runaway
October 1999 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C, per diode unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 5 A; Tj = 150˚C - 1.4 1.75 V
IF = 10 A; Tj = 150˚C - 1.75 2.2 V
IF = 5 A; - 2.0 2.8 V
IRReverse current VR = 600 V - 9 100 µA
VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA
trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs - 30 50 ns
trr Reverse recovery time IF = 5 A; VR = 400 V; - 19 - ns
dIF/dt = 500 A/µs
trr Reverse recovery time IF = 5 A; VR = 400 V; - 25 30 ns
dIF/dt = 500 A/µs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A
dIF/dt = 50 A/µs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A
dIF/dt = 500 A/µs; Tj = 125˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/µs-911V
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
Vin Vo = 400 V d.c.
500 V MOSFET
IL
150 uH
ID
OUTPUT DIODE
typ
Vin Vin = 400 V d.c.
inductive load
IFIR
IL
October 1999 2 Rev 1.000
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
Fig.3. Maximum forward dissipation per diode as a
function of average forward current; rectangular
current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse recovery switching losses per
diode, as a function of rate of change of current dI
F
/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time t
rr
, per diode as a
function of rate of change of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current per
diode, I
rrm
as a function of rate of change of current
dI
F
/dt.
012345678
0
5
10
15 D = 1.0
0.5
0.2
0.1
BYC5-600
Rs = 0.09 Ohms
Vo = 1.3 V
150
137.5
125
112.5
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
D =
t
p
t
p
T
T
t
I
time
ID Irrm
VD
dIF/dt ID = IL
losses due to
diode reverse recovery
100 1000
0
0.05
0.1
0.15
0.2
BYC5-600
f = 20 kHz
Rate of change of current, dIF/dt (A/us)
Diode reverse recovery switching losses, Pdsw (W)
IF = 5 A
10 A
7.5 A
Tj = 125 C
VR = 400 V
100 1000
10
100 BYC5-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
10 A 7.5 A
IF = 5 A
Tj = 125 C
VR = 400 V
100 1000
0
1
2
3
4
5
BYC5-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
VR = 400 V
IF = 5 A
7.5 A
10 A
100 1000
1
10
100 BYC5-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
10 A
October 1999 3 Rev 1.000
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters t
rr
, I
rrm
Fig.10. Typical forward recovery voltage per diode, V
fr
as a function of rate of change of current dI
F
/dt.
Fig.11. Definition of forward recovery voltage V
fr
Fig.12. Typical and maximum forward characteristic
per diode, I
F
= f(V
F
); T
j
= 25˚C and 150˚C.
Fig.13. Typical reverse leakage current per diode as
a function of reverse voltage. I
R
= f(V
R
); parameter T
j
Fig.14. Maximum thermal impedance per diode,
Z
th j-mb
as a function of pulse width.
Qs100%
10%
time
dI
dtF
IR
IF
Irrm
trr
01234
0
2
4
6
8
10 BYC5-600
Forward voltage, VF (V)
Forward current, IF (A)
maxtyp
Tj = 25 C
Tj = 150 C
0 50 100 150 200
0
5
10
15
20 BYC5-600
Tj = 25 C
Rate of change of current, dIF/dt (A/ s)
Peak forward recovery voltage, Vfr (V)
typ
IF = 10 A
0 100 200 300 400 500 600
1uA
10uA
100uA
1mA
10mA
100mA BYC5-600
Reverse voltage (V)
Reverse leakage current (A)
Tj = 125 C
100 C
75 C
50 C
25 C
time
time
VF
Vfr
VF
IF
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV29
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
October 1999 4 Rev 1.000
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1999 5 Rev 1.000
Philips Semiconductors Product specification
Rectifier diode BYC10-600CT
ultrafast, low switching loss
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999 6 Rev 1.000
