NEC / NPN SILICON TRANSISTOR 2SC2688 DESCRIPTION The 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES High Electrostatic-Discharge-Resistance. (E-B reverse bias, C = 2300 pF) ESDR : TYP. 1000 V @ Low C,,, High fr Cr = 3.0 pF (Vcog =30 V) fy 250 MHz (VcgE = 30 V, Ie = 10 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature Junction Temperature 55 to +150 C 150 C Maximum 3.8+0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) S2z0ute 0.126) 3}>< xz s|= 12 3 VS 2 13.0 MIN (0.512 MIN.) Maximum Power Dissipations 0.8 23:88 Total Power Dissipation (Ta= 25C) ........ 1.25 Ww | (9.031) | - : = 2.3) 2.3 Total Power Dissipation (T,. = 25 Cc) see eens 10W (0.090)| (0.090) Maximum Voltages and Current (Tg = 25 C) oo Veogo _ Collector to Base Voltage ....... 300 V t)- Vceo Collector to Emitter Voltage... .. 300 V Vepo Emitter to Base Voltage ........ 5.0 V Collector Current 200 mA | 3 emer Cc olWector Current . 2.1. e ee ee ees 2. Collector connected to mounting plane 3. Base ELECTRICAL CHARACTERISTICS (T,= 25 C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS hee DC Current Gain 40 80 250 Vee =10V, Ie = 10 mA* fy Gain Bandwidth Product 50 80 MHz Vce =30V, lE=-10mA Cre Feedback Capacitance 3.0 pF Vcp = 30 V, Ie = 0, f = 1.0 MHz lcpo Collector Cutoff Current 100 nA Vcp= 200V, Ie =0 lEBO Emitter Cutoff Current 100 nA Vep=5.0V, lo =0 VCE(sat) Collector Saturation Voltage 1.5 Vv Ic = 50 mA, tp = 5.0mA *Pulsed PW S350 us, Duty Cycle S 2% Classification of hfe Rank N M L K Range 40 to 80 60 to 120 | 100 to 200 | 160 to 250 Test Conditions : VcgE = 10 V, IC =10mA 302 Vee(sat) Base Saturation VoltageV VoE(sat) Collector Saturation VoltageV NEC TYPICAL CHARACTERISTICS (Tg = 25 C) TOTAL POWER DISSIPATION vs. AMBINET TEMPERATURE Infinite Heat Sink ray o b ty PyTotal Power DissipationW ao o 25 50 75 100 125 .150 TaAmbient Temperature C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE NO ul ~Collector CurrentmA So w Ic 0 50 i VegeCollector to Emitter Voltage-V VOLTAGE vs. COLLECTOR CURRENT 10.0 I=10-1g 1.0 CE(sat 0.1 I~ Collector Current -mA BASE AND COLLECTOR SATURATION TOTAL POWER DISSIPATION vs. AMBINET TEMPERATURE 1 Free Air Tota! Power Dissipa g wn PT 0 25 50 75 100 125 150 175 Tag Ambient Temperature C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE ~~ VcE=10V ul Ic Collector Current mA _ Nn w 4 12014 VpeBase to Emitter VoltageV GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT Voce =30 V _ ~-Gain Bandwidth Product MHz nr) oO iT | - -10 Ig-Emitter Current-mA -50 -100 2S5C2688 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1 = = E 11 = 2 5 o . 6 3 = 4 3 . 2 0 1 14 Voge Collector to Emitter VoltageV DC CURRENT GAIN vs. COLLECTOR CURRENT VcE=10 V c S 3 wl f 25 5 9 o1 at 5 = ICollector CurrentmA FEEDBACK CAPACITANCE vs, COLLECTOR TO BASE VOLTAGE ig =0 f=1 MHz ul CreFeedback Capacitance pF i 5 10 50 6100 Vog Collector to Base Voltage-V - 303 2SC2688 | NEC BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR Open COLLECTOR TEST CONDITION 1) E-B reverse bias 2) C=2300pF 3) Apply one shot pulse to T.U.T. (Transistor Under the Test) by SW. JUDGEMENT REJECT; BVEBpo waveform defect As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again. 304