SEMICONDUCTOR TIP34C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A E I FEATURES C *Complementary to TIP33C. *Recommended for 45W50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING (Ta=25) CHARACTERISTIC d SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -10 A Base Current IB -3 A PC 80 W P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 3.2 + 0.6+0.3/-0.1 1. BASE Collector Power Dissipation (Tc=25) 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N) Junction Temperature Storage Temperature Range Tj 150 Tstg -55150 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -10 A Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -10 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-25mA, IB=0 -100 - - V DC Current Gain hFE (Note) VCE=-4V, IC=-2A 55 - 160 VCE(sat) IC=-4A, IB=-0.4A - - -1.0 V VCE=-12V, IC=-0.5A - 20 - MHz VCB=-10V, IE=0, f=1MHz - 150 - pF Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance Note : hFE Classification R:55~110, 2001. 1. 10 O:80~160 Revision No : 1 1/2 TIP34C 2001. 1. 10 Revision No : 1 2/2