M4iFsskR] OUTLINE DIMENSIONS D4SC6M 60V 4A Case : ITO-220 10-02 63,3402 Po | st Oy haley = Date code & e 3 Bs acca =| Type No, _[ D4SCOMY z Unit: mm ~ pt MEA RATINGS REXTHRATUH Absolute Maximum Ratings mG 2S |g @ _pasceu 4 Item Symbol Fo : piece : : TRAP ah age | 8 Storage Temperature Tstg es 40- 125 Cc ESMRE . 7. Operating Junction Temperature Tj 125. LS c tt A ga aE Maximum Reverse Voltage VRM & Vv MOIR LAT Veta VRRSM 2S)L Aitg0.5ms, duty 1/40 65 Vv Repetitive Peak Surge Voltage Pulse width 0.5ms, Duty cycle 1/40 : wmode 50Hz IESE, HAM, LRT 4 Oh iF aI 10/2, tH Bait Io Tco=113C 4 A Average Rectified Forward Current c : . . 50Hz sine wave, R-load, Rating for each diode=lo/2, Tc=113C th ASR 2 NRE ait Irsm | OOH2 IES, FARO L 14 7 tA BRAR, TI=125C 60 | OA Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125C . Z ste Vdis thins: + Af, AC 1 SHIFDAN 1.5 kV Dielectric Strength Terminals to case, AC 1 minute : i fF be TOR | (Hes : 3 kg-cm) 5 | kg-em jounting Torque (Recommended torque : 3kg-cm) SEaAD - MAE Electrical Characteristics (Tco=25C) Wa Ve lipa2a, Awl, LETH OBIE Forward Voltage Pulse measurement, Rating of per diode aT In | VawVam, 22) ABE, 1 FM O ORE Reverse Current Pulse measurement, Rating of per diode cee REAR : _ = 1 #74) OFA PYP-yo0 Junction Capacity Ci f=1MHz, VR=10V, Rating of per diode : 0 _ pF ajc | EB: 7 AM MAX 3.3 Junction to case Thermal Resistance Case to heatsink, Mounting torque : ikg-cm 6if HEC 7471 MAX 4,8 Junction to heatsink *El Beil %* Reference value I] @ tHE CHARACTERISTIC DIAGRAMS HAA ater Forward Voltage 10 re re 5 | / [STo=95 (MAX) } To=25C (TYP) =< 2 4 te Yh | 2 To=125 (MAX) = Tce =125C (TYP) @ i a dd 0.2 [Pulse megeurement) | fli er one diode 0.1 1 0204 06 08 1 12 Ld NE EE Ve (V) 16 BAMA HS Forward Power Dissipation 4 w [Wy {Lk TVW a TMP WAAR Pr (W) iy _ 4 HAAR Io [A} HARRY TR Surge Forward Current Capability sine wave 0 '10mS'TomS' me leyele | {non-repetitive Tj=125C tA ~ SWAB Tesm (AJ GBRM (cycle) DA ete Reverse Current # @ iff Ir (mA) > song - Derating EAA To (A) 73 ARE pulse VR=1/2VR PRAM Reverse Power Dissipation. PB HRK Pr [W) BAH Io (AJ At VR=1/2VRM tP D=e kSSa Junction. Capacity f=1IMHz per one diode Tc=25C