Features
•Over temperature shutdown
•Over current shutdown
•Active clamp
•Low current & logic level input
•E.S.D protection
IPS0151(S)
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD60144-K
Description
The IPS0151/IPS0151S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 35A. The device
restarts once the input is cycled. The avalanche
capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Packages
Product Summary
Rds(on) 25mΩ (max)
V clamp 50V
Ishutdown 35A
Ton/Toff 1.5µs
Typical Connection
3-Lead D2Pak
IPS0151S
3-Lead TO-220
PS0151
S
Lo a d
R in series
( if needed )
Logic signal
IN D
control
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(Refer to lead assignment for correct pin configuration)
IPS0151(S)
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application Notes.
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth 1 Thermal resistance free air — 55 —
Rth 2 Thermal resistance junction to case — 2 a
Rth 1 Thermal resistance with standard footprint — 60 —
Rth 2 Thermal resistance with 1" square footprint — 35 —
Rth 3 Thermal resistance junction to case — 2 —
Thermal Characteristics
TO-220
D2PAK (SMD220)
oC/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage — 35
VIH High level input voltage 4 6
VIL Low level input voltage 0 0.5
Ids Continuous drain current
Tamb=85oC (TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS0151 — 4 .3
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS0151S — 3 .8
Rin Recommended resistor in series with IN pin 0.2 5 k
Ω
Tr-in (max) Max recommended rise time for IN signal (see fig. 2) — 1 µS
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
V
A
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage — 47
Vin Maximum Input voltage -0.3 7
Iin, max Maximum IN current -10 +10 mA
Isd cont. Diode max. continuous current (1)
rth=62oC/W IPS0151 — 2.8 TO220 free air
rth=5oC/W IPS015135 — 35
r th=80oC/W IPS0151S — 2 .2 SMD220 Std footprint
Isd pulsed Diode max. pulsed current (1) —45
Pd Maximum power dissipation(1)
(rth=62oC/W) IPS0151 — 2
(r th=80oC/W) IPS0151S — 1.56
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55
150
Tj max. Max. junction temperature -40
+150
Tlead Lead temperature (soldering, 10 seconds) — 300
V
W
ATO220 with Rth=5oC/W
kV
oC
IPS0151(S)
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Symbol Parameter Min. Typ. Max. Units Test Conditions
Tsd Over temperature threshold — 1 65 — oC See fig. 1
Isd Over current threshold 20 35 50 A See fig. 1
Vreset IN protection reset threshold 1. 5 2.3 3 V
Treset Time to reset protection 2 10 40 µs Vin = 0V, Tj = 25oC
EOI_OT Short circuit energy (see application note) — 400 — µJ Vcc = 14V
Protection Characteristics
Symbol Parameter Min. T yp. Max. Units Test Conditions
Rds(on) ON state resistance Tj = 25oC102025
Tj = 150oC—35
45
Idss1 Drain to source leakage current 0 0 .5 25 Vcc = 14V, Tj = 25oC
@Tj=25oC
Idss2 Drain to source leakage current 0 5 50 Vcc = 40V, Tj = 25oC
@Tj=25oC
V clamp 1 Drain to source clamp voltage 1 47 52 56 Id = 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2 50 55 60
Vin clamp IN to source clamp voltage 7 8.1 9.5 Iin = 1 mA
Vin th IN threshold voltage 1 1.6 2 Id = 50mA, Vds = 14V
Iin, -on ON state IN positive current 25 90 200 Vin = 5V
Iin, -off OFF state IN positive current 50 130 250 Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25oC unless otherwise specified.)
mΩVin = 5V, Ids = 1A
Id=Ishutdown (see Fig.3 & 4)
V
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 3Ω, Rinput = 50Ω, 100
u
s pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ton Turn-on delay time 0.05 0.25 0.6
TrRise time 0.2 0.9 1.5
Trf Time to (final Rds(on) 1.3%) —3.8 —
Toff Turn-off delay time 0.8 1.5 2
TfFall time 0.4 1.1 2
Qin Total gate charge —30 —nC Vin = 5V
See figure 2
See figure 2
µs
µA
IPS0151(S)
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Lead Assignments
Part Number
1 2 3
In D S
TO-220
IPS0151
2 (D)
D2PAK (SMD220)
IPS0151S
1 3
In D S
2 (D)
Functional Block Diagram
All values are typical
IN
DRAIN
SOURC
E
8.1
V
80
µ
A
47 V
I se n se
200 k
Ω
200
Ω
S Q
R Q
T > 165 ° c
I > Is d
IPS0151(S)
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Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on Td off tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 °c)
Vin
Ids
Isd I shutdown
TT s hutdown
t < T reset t > T reset
5 V
0 V
14 V
IN D
S
5 v
0 v
L
R+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuitFigure 3 - Active clamp waveforms
Ids
Vds
Vin
T clam
p
Vds clam
(
Vcc
)
( see A ppl . Not e s to e valua te po wer di s si pa tion )
IPS0151(S)
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Figure 6 - Normalised Rds ON (%) Vs Tj (oC)
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
0
10
20
30
40
50
60
012345678
Tj = 25oC
Tj = 150oC
0
1
2
3
4
5
6
7
8
012345678
to ff d elay
f all time
0
1
2
3
4
5
6
7
8
012345678
ton delay
rise time
130% fi nal
rdson
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
200%
-50 -25 0 25 50 75 100 125 150 175
IPS0151(S)
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Figure 12 - Ishutdown (A) Vs Temperature (oC)
Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds (on) (us) Vs IN Resistor (Ω)Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)
0
5
10
15
20
25
30
35
40
45
50
012345678
Isd 25°C
Ilim 25°C
0.1
1
10
100
10 100 1000 10000
delay off
fall time
0.1
1
10
100
10 100 1000 10000
del ay on
rise time
130% rdso n
0
5
10
15
20
25
30
35
40
45
50
-50 -25 0 25 50 75 100 125 150
IPS0151(S)
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Figure 16 - Transient Thermal Imped. (oC/W)
Vs Time (s) - IPS0151/IPS051S
0.01
0.1
1
10
100
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
1E+03
rth free air T O220, std
footprint SMD220
rth juncti on to c a se =
1.8°C/W
Single pulse
Figure 13 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
single puls e
100 Hz rth =60°C/ W dT=25°C
1kHz r th =60°C /W dT=25°C
Vbat = 14 V
Tjini = T sd
Figure 14 - Max.Cont. Ids (A) Vs Ambient
Temperature (oC)
1
10
100
T=2 5°C T=100°C
Current path capability
should be above this
Load characteristic should
be below this curve
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
-50 0 50 100 150 200
rth = 5°C/W
rth = 15°C/W
SMD220 1' ' footprint
SMD220 std. footprint
IPS0151(S)
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0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125 150
Iin,on
Iin,off
Figure 17 - Input current (µA) Vs Junction (oC)
80%
85%
90%
95%
100%
105%
110%
115%
120%
-50 -25 0 25 50 75 100 125 150
Vds clamp @ I sd
Vin clamp @ 10mA
Figure 18 - Vin clamp and V clamp2 (V)
Vs Tjunction (oC)
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
Treset
rise time
fall time
Figure 19 - Turn-on, Turn-off, and Treset (µs)
Vs Tjunction (oC)
IPS0151(S)
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01-6024 00
IRGB 01-3026 01 (TO-220AB)
Case Outline
NOTES:
2
2X 3-Lead TO-220AB
IPS0151(S)
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01-6022 00
115-0088 10 (TO-263AB)
3-Lead D2PAK
Case Outline
IPS0151(S)
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Tape & Reel - D2PAK (SMD220)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 11/13/2001
01-3072 00
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/