VS-SD1053C..L Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A FEATURES * High power fast recovery diode series * 2.0 s to 3.0 s recovery time * High voltage ratings up to 3000 V * High current capability * Optimized turn-on and turn-off characteristics * Low forward recovery * Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC(R) B-PUK (DO-200AB) B-PUK (DO-200AB) * Maximum junction temperature 150 C * Designed and qualified for industrial level PRIMARY CHARACTERISTICS IF(AV) 920 A, 1050 A Package B-PUK (DO-200AB) Circuit configuration Single * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER SD1053C..L TEST CONDITIONS IF(AV) Ths IF(RMS) IFSM VRRM trr UNITS S20 S30 1050 920 A 55 55 C 1940 1700 50 Hz 15 000 13 000 60 Hz 15 700 13 610 Range 1800 to 2500 1800 to 3000 V 2.0 3.0 s TJ 25 C -40 to +150 TJ A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD1053C..S20L VS-SD1053C..S30L VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 18 1800 1900 22 2200 2300 24 2400 2500 25 2500 2600 18 1800 1900 22 2200 2300 25 2500 2600 28 2800 2900 30 3000 3100 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 Revision: 11-Jan-18 Document Number: 93167 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature IF(AV) IF(RMS) Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IFSM SD1053C..L UNITS S20 S30 1050 (450) 920 (390) A 55 (85) 55 (85) C 1940 1700 15 000 13 000 15 700 13 610 A 12 620 10 930 13 210 11 450 1125 845 1027 772 kA2s 796 598 727 546 11 250 8450 kA2s 1.34 1.51 V 1.48 1.67 TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms No voltage reapplied t = 8.3 ms VF(TO)1 VF(TO)2 t = 10 ms 100 % VRRM reapplied t = 8.3 ms Sinusoidal half wave, initial TJ = TJ maximum t = 10 ms No voltage reapplied t = 8.3 ms t = 10 ms 100 % VRRM reapplied t = 8.3 ms t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.37 0.50 rf2 (I > x IF(AV)), TJ = TJ maximum 0.33 0.45 Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.90 2.26 Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance I2t m VFM Maximum forward voltage drop V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 C CODE Ipk SQUARE PULSE (A) trr AT 25 % IRRM (s) S20 2.0 S30 3.0 TYPICAL VALUES AT TJ = 150 C TEST CONDITIONS 1000 IFM dI/dt (A/s) Vr (V) 100 trr AT 25 % IRRM (s) - 50 Qrr (C) Irr (A) 4.0 400 180 4.5 550 230 trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range SYMBOL TEST CONDITIONS TJ, TStg Maximum thermal resistance, case junction to heatsink RthJ-hs Mounting force, 10 % Approximate weight Case style DC operation single side cooled DC operation double side cooled See dimensions - link at the end of datasheet VALUES UNITS -40 to 150 C 0.073 K/W 0.031 14 700 (1500) N (kg) 255 g B-PUK (DO-200AB) RthJ-hs CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 0.009 0.011 0.014 0.020 0.036 0.008 0.011 0.014 0.021 0.036 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.022 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93167 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series 160 Vishay Semiconductors SD1053C..S20L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 140 120 Conduction Angle 100 80 60 30 180 60 90 120 40 0 100 200 300 400 500 600 700 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 160 SD1053C..S30L Series (Single Side Cooled) R thJ-hs (DC) = 0.073 K/ W 140 120 100 Conduc tion Period 80 60 30 60 40 90 120 20 0 160 SD1053C..S20L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 120 100 Conduction Period 80 30 60 90 40 120 180 DC 20 0 200 400 600 800 1000 1200 Conduction Angle 80 30 40 60 90 120 180 20 0 100 200 300 400 500 Average Forward Current (A) Fig. 3 - Current Ratings Characteristics 600 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temp erature (C) 120 60 800 1000 SD1053C..S20L Series (Double Side Cooled) R thJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Angle 80 60 30 60 90 40 120 180 20 0 0 200 400 600 800 1000 1200 1400 Fig. 5 - Current Ratings Characteristics SD1053C..S30L Series (Single Side Cooled) RthJ-hs (DC) = 0.073 K/ W 100 600 Average Forward Current (A) Fig. 2 - Current Ratings Characteristics 140 400 160 Average Forward Current (A) 160 200 Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Fig. 1 - Current Ratings Characteristics 60 DC Average Forward Current (A) Average Forward Current (A) 140 180 0 160 SD1053C..S20L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Period 80 30 60 60 90 40 120 180 20 DC 0 0 400 800 1200 1600 2000 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93167 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series 160 Vishay Semiconductors SD1053C..S30L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 140 120 100 Conduction Angle 80 60 40 20 90 120 60 30 180 0 0 200 400 600 800 Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) www.vishay.com 4500 DC 180 120 90 60 30 4000 3500 3000 2500 RMSLimit 2000 1500 Conduction Period 1000 SD1053C..S20L Series TJ = 150C 500 0 0 1000 1200 Average Forward Current (A) 160 SD1053C..S30L Series (Double Side Cooled) RthJ-hs (DC) = 0.031 K/ W 120 100 Conduction Period 80 30 60 60 90 120 40 180 20 DC 0 0 400 800 1200 1600 2000 3500 2500 2000 RMSLimit 1500 1000 Conduction Angle 500 SD1053C..S20L Series TJ = 150C 0 0 200 400 1600 2000 2800 180 120 90 60 30 2400 2000 600 800 1000 1200 1400 Average Forward Current (A) Fig. 9 - Forward Power Loss Characteristics RMS Limit 1600 1200 Conduction Angle 800 SD1053C..S30L Series TJ = 150C 400 0 0 200 400 600 800 1000 1200 Average Forward Current (A) Fig. 11 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) Fig. 8 - Current Ratings Characteristics 180 120 90 60 30 1200 3200 Average Forward Current (A) 3000 800 Fig. 10 - Forward Power Loss Characteristics Maximum Average Forward Power Loss (W) Maximum Allowable Heatsink Temperature (C) Fig. 7 - Current Ratings Characteristics 140 400 Average Forward Current (A) 4500 DC 180 120 90 60 30 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 SD1053C..S30L Series TJ = 150C 500 0 0 400 800 1200 1600 2000 Average Forward Current (A) Fig. 12 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93167 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series 14000 Vishay Semiconductors Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150 C @60 Hz 0.0083 s @50 Hz 0.0100 s 13000 12000 11000 10000 9000 8000 7000 6000 SD1053C..S20L Series 5000 4000 1 10 100 13000 12000 11000 10000 Maximum Non Repetitive Surg e Current Versus Pulse Train Duration. Initial TJ = 150 C No Voltag e Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 SD1053C..S30L Series 4000 3000 0.01 0.1 Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 16000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 14000 Initial TJ = 150 C No Voltage Reapplied 12000 Rated VRRM Reapplied 10000 8000 6000 SD1053C..S20L Series 4000 2000 0.01 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) Fig. 13 - Maximum Non-Repetitive Surge Current TJ = 25C TJ = 150C 1000 SD1053C..S20L Series 100 0.1 1 1 Pulse Train Duration (s) 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V) Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 17 - Forward Voltage Drop Characteristics 10000 12000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150C @60 Hz 0.0083 s @50 Hz 0.0100 s 11000 10000 9000 8000 7000 6000 5000 SD1053C..S30L Series 4000 3000 Instantaneous Forward Current (A) Peak Half Sine Wave Forward Current (A) 1 Pulse Train Dura tion (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) TJ = 25C TJ = 150C 1000 SD1053C..S30L Series 100 1 10 100 Number Of Equa l Amplitude Half Cyc le Current Pulses (N) Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Instantaneous Forward Voltage (V) Fig. 18 - Forward Voltage Drop Characteristics Revision: 11-Jan-18 Document Number: 93167 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series Transient Thermal Impedance Z thJ-hs (K/ W) www.vishay.com Vishay Semiconductors 0.1 SD1053C..S20/ S30L Series Steady State Value 0.01 R thJ-hs = 0.073 K/ W (Single Side Cooled) R thJ-hs = 0.031 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic Maximum Reverse Recovery Time - Trr (s) 100 V TJ = 150C I Forward Recovery (V) 80 60 TJ = 25C 40 20 SD1053C..S20L Series 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 20 - Typical Forward Recovery Characteristics 160 V FP Forward Recovery (V) I TJ = 150C 120 80 TJ = 25C 40 SD1053C..S30L Series 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 21 - Typical Forward Recovery Characteristics 6.5 SD1053C..S20L Series TJ= 150 C; V r > 100V 6 5.5 5 I FM= 1500 A Sine Pulse 4.5 1000 A 4 500 A 3.5 3 2.5 10 100 1000 Rate Of Fall Of Forward Current - di/dt (A/ s) Fig. 22 - Recovery Time Characteristics Maximum Reverse Rec overy Charge - Qrr (C) FP 1000 I FM= 1500 A Sine Pulse 900 800 1000 A 700 600 500 A 500 400 300 200 SD1053C..S20L Series TJ = 150 C; Vr > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/s) Fig. 23 - Recovery Charge Characteristics Revision: 11-Jan-18 Document Number: 93167 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series Vishay Semiconductors 500 Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Recovery Current - Irr (A) www.vishay.com I = 1500 A FM Sine Pulse 450 400 1000 A 500 A 350 300 250 200 150 100 SD1053C..S20L Series TJ = 150 C; Vr > 100V 50 0 0 50 100 150 200 250 300 700 I FM = 1500 A 600 Sine Pulse 1000 A 500 500 A 400 300 200 SD1053C..S30L Series TJ = 150C; V r > 100V 100 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 24 - Recovery Current Characteristics Fig. 27 - Recovery Current Characteristics 1E4 9 SD1053C..S30L Series TJ= 150 C; V r > 100V 8.5 10 joules p er pulse 8 7.5 7 6.5 6 I FM = 1500 A Sine Pulse 5.5 1000 A 5 500 A 4.5 2 1 0.6 0.4 1E3 0.2 0.08 4 100 1E2 1E1 1000 1E2 1E3 1E4 Pulse Basewidth (s) Rate Of Fa ll Of Forward Current - di/ dt (A/ s) Fig. 25 - Recovery Time Characteristics Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1600 I FM = 1500 A 1400 Sine Pulse 1200 1000 A 1000 500 A 800 600 400 Peak Forward Current (A) Maximum Reverse Rec overy Charge - Qrr (C) SD1053C..S20L Series Sinusoidal Pulse TJ = 150C, VRRM = 800V dv/ dt = 1000V/ s tp 3.5 10 6 4 Peak Forward Current (A) Maximum Reverse Rec overy Time - Trr (s) Rate Of Fa ll Of Forward Current - d i/ dt (A/ s) 1000 2000 400 200 100 50 Hz 3000 4000 6000 1E3 10000 15000 tp 20000 SD1053C..S20L Series Sinusoida l Pulse TC= 55C, VRRM = 800V dv/ d t = 1000V/ us SD1053C..S30L Series TJ = 150C; V r > 100V 200 0 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 26 - Recovery Charge Characteristics 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Fig. 29 - Frequency Characteristics Revision: 11-Jan-18 Document Number: 93167 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series www.vishay.com Vishay Semiconductors 1E4 10 joules p er p ulse 6 4 2 1 1E3 0.8 0.6 0.4 SD1053C..S20L Series Trapezoidal Pulse TJ = 150C, VRRM = 800V dv/ dt = 1000V/ s, di/ dt = 300A/ s tp 1E2 1E1 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 1E4 2000 4000 1E3 400 200 100 50 Hz 6000 10000 SD1053C..S20L Series Trap ezoid al Pulse TC= 55C, VRRM = 800V d v/ dt = 1000V/us d i/ dt = 100A/ us 15000 20000 tp 1E2 1E1 1E4 1000 600 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 33 - Frequency Characteristics Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 1500 100 50 Hz 400 200 1000 600 2000 3000 1E3 4000 6000 SD1053C..S20L Series Trapezoidal Pulse TC= 55C, VRRM = 800V dv/ dt = 1000V/ us, di/ dt = 300A/ us 10000 15000 tp 20000 1E2 1E1 1E2 1E3 Peak Forward Current (A) Peak Forward Current (A) 10 joules per pulse 4 2 1 0.6 0.4 1E3 0.2 SD1053C..S30L Series Sinusoidal Pulse TJ = 150C, VRRM = 1000V dv/ d t = 1000V/ s tp 1E2 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics 1E4 1E4 6 10 joules per p ulse 4 2 1 1E3 0.8 0.6 0.4 tp 1E2 1E1 SD1053C..S20L Series Trapezoidal Pulse TJ = 150C, VRRM = 800V d v/ dt = 1000V/ s, di/ dt = 100A/ s 1E2 1E3 Pulse Basewidth (s) Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Peak Forward Current (A) Peak Forward Current (A) 6 400 200 100 50 Hz 3000 4000 6000 1E3 10000 15000 tp 20000 1E4 1000 2000 1E2 1E1 1E2 SD1053C..S30L Series Sinusoidal Pulse TC= 55C, VRRM = 1000V d v/ dt = 1000V/us 1E3 1E4 Pulse Basewidth (s) Fig. 35 - Frequency Characteristics Revision: 11-Jan-18 Document Number: 93167 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1053C..L Series www.vishay.com Vishay Semiconductors 1E4 10 joules per p ulse Peak Forward Current (A) Peak Forward Current (A) 1E4 6 4 2 1E3 1 0.8 0.6 SD1053C..S30L Series Trapezoidal Pulse TJ = 150C, VRRM = 1000V dv/ dt = 1000V/ s, di/ dt = 300A/ s tp 1E2 1E1 1E2 4 2 0.8 1E3 SD1053C..S30L Series Trap ezoid al Pulse TJ = 150C, VRRM = 1000V dv/ dt = 1000V/ s, di/ dt = 100A/ s 1E2 1E1 1E4 1E2 1E4 Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 1000 600 400 200 Peak Forward Current (A) Peak Forward Current (A) 1E3 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics 100 50 Hz 1500 2000 1E3 3000 4000 6000 10000 tp 15000 1E2 1E1 1 0.6 tp 1E3 10 joules p er pulse 6 1E2 SD1053C..S30L Series Tra pezoidal Pulse TC= 55C, VRRM = 1000V dv/ dt = 1000V/ us, di/ dt = 300A/ us 1E3 1000 2000 3000 1E3 100 400 200 50 Hz 4000 6000 10000 15000 tp 1E2 1E1 1E4 600 1E2 SD1053C..S30L Series Trapezoidal Pulse TC= 55C, VRRM = 1000V dv/ dt = 1000V/ us, di/ dt = 100A/ us 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 39 - Frequency Characteristics Fig. 37 - Frequency Characteristics ORDERING INFORMATION TABLE Device code VS- SD 105 3 C 30 S30 L 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code 8 - L = PUK case B-PUK (DO-200AB) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95246 Revision: 11-Jan-18 Document Number: 93167 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors B-PUK (DO-200AB) DIMENSIONS in millimeters (inches) 58.5 (2.30) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 25.4 (1) 26.9 (1.06) C A 53 (2.09) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95246 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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