DMC1015UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Device BVDSS Q1 12V Q2 -20V Features and Benefits RDS(ON) ID TA = +25C 17m @ VGS = 4.5V 9.5A 25m @ VGS = 2.5V 7.8A 35m @ VGS = -4.5V -6.8A 55m @ VGS = -2.5V -5.3A Description and Applications Thermally Efficient Package - Cooler Running Applications High Conversion Efficiency Low RDS(ON) - Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q101) for High Reliability. https://www.diodes.com/quality/product-definitions/ This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Mechanical Data Notebook Battery Power Management DC-DC Converters Load Switch PowerDI5060-8 (Type C) (R) Case: PowerDI 5060-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) D1 G1 D2 G2 S1 S2 S1 D1 G1 D1 S2 D2 G2 D2 Pin1 Top View Bottom View Q1 N-Channel MOSFET Q2 P-Channel MOSFET Top View Pin Configuration Ordering Information (Note 4) Part Number DMC1015UPD-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. PowerDI is a registered trademark of Diodes Incorporated. DMC1015UPD Document number: DS37992 Rev. 4 - 2 1 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD Marking Information D1 D1 D2 D2 = Manufacturer's Marking C1015UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) C1015UD YY WW S1 G1 S2 G2 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Q1 Value 12 -20 Unit V VGSS 8 8 V ID 9.5 7.6 -6.8 -5.4 A ID 13.0 10.4 -9.4 -7.5 A 2.4 65 -2.2 -35 A A 22 25 -20 20 A mJ IS IDM IAS EAS Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH Q2 Value Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol TA = +25C TA = +70C Steady State t<10s Thermal Resistance, Junction to Case Operating and Storage Temperature Range Notes: PD Value 2.3 RJC 1.5 56 29 5.4 TJ, TSTG -55 to +150 RJA Units W C/W C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C. DMC1015UPD Document number: DS37992 Rev. 4 - 2 2 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD Electrical Characteristics Q1 N-Channel (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS 12 IDSS IGSS 1 V A 100 nA VGS(TH) 0.6 0.8 1.5 V RDS(ON) 9.6 17 11 25 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD 0.7 1.2 Ciss 1495 Output Capacitance Coss 310 Reverse Transfer Capacitance Gate Resistance Crss Total Gate Charge (VGS = 3.3V) Rg Qg 285 1.6 11.5 Total Gate Charge (VGS = 4.5V) Gate-Source Charge Qg 15.6 Qgs 2.3 Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Qgd 4.6 5.7 Turn-On Rise Time tD(ON) tR 10.1 Turn-Off Delay Time tD(OFF) 40.4 16.4 -- 3.2 -- Gate-Drain Charge Turn-On Delay Time Body Diode Reverse Recovery Time tRR -- Body Diode Reverse Recovery Charge QRR -- Turn-Off Fall Time tF 22.5 m Test Condition VGS = 0V, ID = 250A VDS = 12V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 11.8A VGS = 2.5V, ID = 9.8A V VGS = 0V, IS = 2.9A pF VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 6V, ID = 11.8A nS VDD = 6V, RL = 6 VGS = 4.5V, Rg = 6, ID = 1A nS IF = 2.9, di/dt = 100A/s nC IF = 2.9A, di/dt = 100A/s Electrical Characteristics Q2 P-Channel (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -- -- V VGS = 0V, ID = -250A IDSS -20 -- -- Zero Gate Voltage Drain Current -1 A VDS = -20V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS -- -- 100 nA VGS = 8V, VDS = 0V VGS(TH) RDS(ON) -1.5 35 55 -1.2 V Static Drain-Source On-Resistance -0.6 -- VDS = VGS, ID = -250A VGS = -4.5V, ID = -8.9A VGS = -2.5V, ID = -6.9A VGS = 0V, IS = -2.9A OFF CHARACTERISTICS (Note7) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance VSD -- -0.8 25 34 -0.8 Ciss -- 1745 -- Coss -- 146 -- Crss Rg -- 119 -- Gate Resistance 7.5 Total Gate Charge (VGS = -3.3V) Qg 11.2 Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Qg 15.4 Qgs Turn-On Delay Time Qgd tD(ON) 1.9 2.9 7.4 Turn-On Rise Time tR 6.2 Turn-Off Delay Time tD(OFF) 60.1 tF 16.3 tRR QRR 9.2 2.8 -- Reverse Transfer Capacitance Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: m V pF VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -6V, ID = -8.9A nS VDD = -6V, Rg = 6 VGS = -4.5V, ID = -1A nS nC IF = -2.9A, di/dt = -100A/s IF = -2.9A, di/dt = -100A/s 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC1015UPD Document number: DS37992 Rev. 4 - 2 3 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD Typical Characteristics - N-CHANNEL 30.0 30 VGS=2.0V VGS = 2.5V VGS = 3.0V VDS = 5.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS = 4.5V VGS = 8.0V 20.0 15.0 10.0 VGS = 1.5V 5.0 VGS = 1.2V TJ=125 10 TJ=85 TJ=150 5 TJ=25 TJ=-55 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.011 VGS = 2.5V 0.01 0.009 VGS = 4.5V 0.007 0.006 0 5 10 15 20 0.8 1.1 1.4 1.7 25 0.1 0.08 0.06 ID = 9.8A 0.04 0.02 ID = 11.8A 0 0 30 2 4 6 8 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 0.014 VGS = 4.5V 150 0.012 125 0.01 85 0.008 25 0.006 -55 0.004 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Typical Characteristics - N-CHANNEL (Cont.) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMC1015UPD Document number: DS37992 Rev. 4 - 2 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.012 0.008 0.5 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 15 VGS = 1.3V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 20 4 of 10 www.diodes.com 1.8 1.6 1.4 VGS = 4.5V, ID = 11.8A 1.2 1 VGS = 2.5V, ID = 9.8A 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature October 2019 (c) Diodes Incorporated DMC1015UPD 0.02 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) Typical Characteristics - N-CHANNEL (continued) 0.018 0.016 0.014 VGS = 2.5V, ID = 9.8A 0.012 0.01 0.008 VGS = 4.5V, ID = 11.8A 0.006 0.004 0.002 0 -50 -25 0 25 50 75 100 125 1 ID = 1mA 0.8 ID = 250A 0.6 0.4 0.2 150 -50 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature 25 50 75 100 125 150 10000 25 20 15 TJ = 85oC 10 TJ = 125oC TJ = 25oC TJ = 150oC 5 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V Is, SOURCE CURRENT (A) 0 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs. Junction Temperature 30 TJ = -55oC Ciss 1000 Coss Crss 100 0 0 0.3 0.6 0.9 1.2 0 1.5 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 4.5 100 PW =100s RDS(ON) Limited ID, DRAIN CURRENT (A) 4 3.5 3 VGS (V) -25 2.5 2 VDS = 6V, ID = 11.8A 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 Typical Characteristics - P-CHA Qg (nC) Figure 11. Gate Charge DMC1015UPD Document number: DS37992 Rev. 4 - 2 10 PW =1ms PW =10ms 1 0.1 PW =100ms PW =1s TJ(Max) = 150 TC = 25 PW =10s Single Pulse DC DUT on 1*MRP Board VGS= 4.5V 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area 5 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD Typical Characteristics - P-CHANNEL 30.0 30 VGS = -2.5V VGS=-3.0V VGS = -4.5V 20.0 VGS = -8.0V 15.0 VGS = -2.0V 10.0 5.0 0.0 0 VDS = -5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20 15 10 VGS = -1.5V 5 VGS = -1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) TJ=125 TJ=150 0.5 5 0.05 VGS = -2.5V 0.03 VGS = -4.5V 0.01 0 5 10 15 20 25 30 1.5 2 2.5 0.15 ID = -8.9A 0.1 ID = -6.9A 0.05 0 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 15. Typical On-Resistance vs. Drain Current and Gate Voltage Figure 16. Typical Transfer Characteristic VGS = -4.5V 0.04 150 0.035 125 0.03 85 0.025 25 0.02 -55 0.015 0.01 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 17. Typical On-Resistance vs. Drain Current and Junction Temperature DMC1015UPD Document number: DS37992 Rev. 4 - 2 3 0.2 ID, DRAIN-SOURCE CURRENT (A) 0.045 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.07 0.02 1 VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristic Figure 13. Typical Output Characteristic 0.04 TJ=85 TJ=25 TJ=-55 6 of 10 www.diodes.com 1.6 1.4 1.2 VGS = -4.5V, ID = -8.9A 1 0.8 VGS = -2.5V, ID = -6.9A 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 18. On-Resistance Variation with Junction Temperature October 2019 (c) Diodes Incorporated DMC1015UPD 0.06 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) Typical Characteristics - P-CHANNEL (continued) 0.05 0.04 VGS = -2.5V, ID = -6.9A 0.03 0.02 VGS = -4.5V, ID = -8.9A 0.01 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE () 1.2 1 ID = -1mA 0.8 ID = -250A 0.6 0.4 0.2 -50 150 Figure 19. On-Resistance Variation with Junction Temperature 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 20. Gate Threshold Variation vs. Junction Temperature 10000 30 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 Is, SOURCE CURRENT (A) -25 20 15 TJ = 85oC TJ = 125oC 10 TJ = 25oC TJ = 150oC 5 TJ = -55oC Ciss 1000 Coss 100 Crss 10 0 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21. Diode Forward Voltage vs. Current 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5 Figure 22. Typical Junction Capacitance 4.5 100 RDS(ON) Limited 4 ID, DRAIN CURRENT (A) 3.5 VGS (V) 3 2.5 2 1.5 VDS = -6V, ID = -8.9A 1 0.5 0 0 2 4 6 8 10 Qg (nC) 12 14 16 Figure 23. Gate Charge DMC1015UPD Document number: DS37992 Rev. 4 - 2 20 7 of 10 www.diodes.com PW =100s 10 1 0.1 PW =1ms PW =10ms PW =100ms PW =1s TJ(Max) = 150 TC = 25 PW =10s Single Pulse DC DUT on 1*MRP Board VGS= -4.5V 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 100 October 2019 (c) Diodes Incorporated DMC1015UPD r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 D=0.005 RJA(t) = r(t) * RJA RJA = 104/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 25. Transient Thermal Resistance DMC1015UPD Document number: DS37992 Rev. 4 - 2 8 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) O 1.000 Depth 0.07 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 L4 D2 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMC1015UPD Document number: DS37992 Rev. 4 - 2 C Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 9 of 10 www.diodes.com October 2019 (c) Diodes Incorporated DMC1015UPD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2019, Diodes Incorporated www.diodes.com DMC1015UPD Document number: DS37992 Rev. 4 - 2 10 of 10 www.diodes.com October 2019 (c) Diodes Incorporated