2N4125 & 2N4126
Silicon PNP Transistor
Audio Amplifier, Switch
TO92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO
2N4125 30V.....................................................................
2N4126 25V.....................................................................
Collector−Base Voltage, VCBO
2N4125 30V.....................................................................
2N4126 25V.....................................................................
Emitter−Base Voltage, VEBO 4V..........................................................
Continuous Collector Current, IC200mA..................................................
Total Device Dissipation (TA = +255C), PD625mW.........................................
Derate Above 255C 5mW/5C.......................................................
Total Device Dissipation (TC = +255C), PD1.5W............................................
Derate Above 255C 12mW/5C......................................................
Operating Junction Temperature Range, TJ−555 to +1505C..................................
Storage Temperature Range, Tstg −555 to +1505C..........................................
Thermal Resistance, Junction to Case, RthJC 83.35C/W.....................................
Thermal Resistance, Junction to Ambient, RthJA 2005C/W...................................
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
2N4125
V(BR)CEO IC = 1mA, IE = 0, Note 1 30 − − V
2N4126 25 − − V
Collector−Base Breakdown Voltage
2N4125
V(BR)CBO IC = 105A, IE = 0 30 − − V
2N4126 25 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 105A, IC = 0 4− − V
Collector Cutoff Current ICBO VCB = 20V, IE = 0 − − 50 nA
Base Cutoff Current IBL VBE = 3V, IC = 0 − − 50 nA
ON Characteristics (Note 1)
DC Current Gain
2N4125
hFE VCE = 1V, IC = 2mA 50 −150
2N4126 120 −360
2N4125 VCE = 1V, IC = 50mA 25 − −
2N4126 60 − −
Note 1. Pulse Test: Pulse Width 3 3005s, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA − − 0.4 V
Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5mA − − 0.95 V
Small−Signal Characteristics
Current Gain−Bandwidth Product
2N4125
fTIC = 10mA, VCE = 20V, f = 100MHz 200 − − MHz
2N4126 250 − − MHz
Input Capacitance Cibo VBE = 0.5V, IC = 0, f = 100kHz − − 10 pF
Collector−Base Capacitance Ccb IE = 0, VCB = 5V, f = 1MHz − − 4.5 pF
Small−Signal Current Gain
2N4125
hfe IC = 2mA, VCE = 10V, f = 1kHz 50
−
200
2N4126 120 −480
Current Gain − High Frequency
2N4125
|hfe|
IC = 10mA, VCE = 20V, f = 100MHz 2.0 − − −
2N4126 2.5 − − −
Noise Figure
2N4125
NF IC = 1005A, VCE = 5V, RS = 1k3,
Noise Bandwidth = 10Hz to 15.7kHz − − 5.0 db
2N4126 − − 4.0 db
Note 1. Pulse Test: Pulse Width 3 3005s, Duty Cycle 3 2%.
.021 (.445) Dia Max
E B C
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
